On the anisotropic wafer curvature of GaN-based heterostructures on Si(110) substrates grown by MOVPE

Mauder, C.; Booker, Ian Don; Fahle, Dirk; Boukiour, H.; Behmenburg, H.; Khoshroo, L. Rahimzadeh; Woitok, J.; Vescan, A.; Heuken, M.; Kalisch, H.; Jansen, R.H.

doi:10.1016/j.jcrysgro.2010.08.049

Cited by 8 publications

(3 citation statements)

References 16 publications

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“…The growth of GaN epitaxy on Si has become very popular for its potential for uses in light emitting diodes, high-frequency electronic devices, ultraviolet detectors, and related technologies [1,2] . Although some GaN based devices are already commercialized, it is still a challenge to produce high quality material, due to the lack of GaN homo-epitaxial substrates.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the growth of GaN epitaxy on silicon

Zhao

2018

J. Semicond.

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Due to the great potential of GaN based devices, the analysis of the growth of crack-free GaN with high quality has always been a research hotspot. In this paper, two methods for improving the property of the GaN epitaxial layer on Si (111) substrate are researched. Sample A, as a reference, only has an AlN buffer between the Si substrate and the epitaxy. In the following two samples, a GaN transition layer (sample B) and an AlGaN buffer (sample C) are grown on the AlN buffer separately. Both methods improve the quality of GaN. Meanwhile, using the second method, the residual tensile thermal stress decreases. To further study the impact of the two introduced layers, we investigate the stress condition of GaN epitaxial layer by Raman spectrum. According to the Raman spectrum, the calculated residual stress in the GaN epitaxial layer is approximately 0.72 GPa for sample B and 0.42 GPa for sample C. The photoluminescence property of GaN epitaxy is also investigated by room temperature PL spectrum.

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Section: Introductionmentioning

confidence: 99%

Analysis of the growth of GaN epitaxy on silicon

Zhao

2018

J. Semicond.

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“…21) We reported the effect of an ultrathin AlN=GaN superlattice interlayer (SL IL) on the strain modulation of a GaN epilayer on Si(110) substrates in both the plasma-assisted molecular beam epitaxy (rf-MBE) and metalorganic chemical vapor deposition (MOCVD) growth techniques. 22,23) The novel point of the ultrathin SL IL is that the thickness of each layer in the SL is less than that in the conventional AlN= (Al,Ga)N SL structure proposed by other groups, [24][25][26] which results in self-generated microcrack (MC) formation in the SL IL region. This MC formation revealed a new strain relaxation mechanism that can be used to modulate the strain in the GaN epilayer.…”

Section: Introductionmentioning

confidence: 99%

Effect of double superlattice interlayers on growth of thick GaN epilayers on Si(110) substrates by metalorganic chemical vapor deposition

Shen

Takahashi

Ide

et al. 2016

Jpn. J. Appl. Phys.

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The effect of double thin AlN/GaN superlattice interlayers (SL ILs) on the growth of thick GaN epilayers by metalorganic chemical vapor deposition (MOCVD) on Si(110) substrates is investigated. It is found that the GaN middle layer (GaN layer between the two SL ILs) can affect the strain state of the GaN epilayer. By comparison with the case of a single SL IL, it is shown that the double SL ILs can have a stronger compressive effect on the GaN epilayer grown on it, which results in lower residual tensile strain in the GaN film after the growth. By optimizing the GaN middle layer thickness, a 4-µm-thick crack-free GaN epilayer is successfully achieved. By this simple technique, it is expected that high-quality crack-free thick GaN can be grown on Si substrates for optical and electronic device applications.

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“…8,[23][24][25][26] The thicknesses of the AlN and GaN layers in the SL structure are from 1.0 to 4.0 nm, which are much smaller than those in conventional AlN= (Al,Ga)N SL structures. 27,28) The growth of such a thin periodic SL is sensitive to the strain, especially in highly strained systems such as those with III-nitrides grown on Si substrates.…”

mentioning

confidence: 99%

Impact of strain state on the ultrathin AlN/GaN superlattice growth on Si(110) substrates by metalorganic chemical vapor deposition

Shen

Takahashi

Ide

et al. 2017

Jpn. J. Appl. Phys.

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We investigate the effect of strain state on ultrathin AlN/GaN superlattice (SL) growth by metalorganic chemical vapor deposition. It is found that the strain state (tensile or compressive) plays a role in periodic structure formation. A well-ordered SL growth with excellent periodicity can be realized under a tensile strain. However, a disordered SL structure is formed under a compressive strain. Furthermore, the ordered SL growth can be restored by inverting the strain state. Our findings show the importance of strain engineering in nanoscale structure growth.

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On the anisotropic wafer curvature of GaN-based heterostructures on Si(110) substrates grown by MOVPE

Cited by 8 publications

References 16 publications

Analysis of the growth of GaN epitaxy on silicon

Analysis of the growth of GaN epitaxy on silicon

Effect of double superlattice interlayers on growth of thick GaN epilayers on Si(110) substrates by metalorganic chemical vapor deposition

Impact of strain state on the ultrathin AlN/GaN superlattice growth on Si(110) substrates by metalorganic chemical vapor deposition

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