On the Application Potential of Chemically Tailored Metal Oxide and Higher Chalcogenide Nanoparticles for Nanoscale Resistive Switching Devices

Abstract

Resistive switching for non‐volatile data storage is a highly relevant field of research. Up to now, resistive switching devices are fabricated via semiconductor processing technologies. This poses the question, of whether integration of chemically tailored nanoparticles, either consisting of valence change or phase change materials, can be integrated in nanoelectrode configurations in order to explore their functionality for resistive switching applications. This Review will discuss the resistive switching properties of such nanoparticles by means of selected examples of both, nanoparticle assemblies as well as on the individual particle level. Although this field of research is rather unexplored, it will become evident that chemically tailored nanoparticles bear great potential for resistive switching applications.This article is protected by copyright. All rights reserved.

Capacitor or Memristor: Janus Behavior of Polyoxometalates

“…Especially, exploiting molecular redox properties opens up exciting opportunities to realize hybrid memory devices with an extremely high data density . In that context, chemically tailored molecular metal–oxide nanoparticles with high redox activity have also been discussed for integration into the rather new class of nonvolatile resistive switching memories. , However, in the following, we will demonstrate that the discrete molecular nature of POMs results in an extraordinary Janus-like behavior with both capacitive and memristive properties, which is what makes this chemical class of compounds so interesting for various data memory designs.…”