On the behaviour of p-n junction solar cells made in fine-grained silicon layers

The dislocation dependence of open circuit voltage is studied based on Donolato's model for the effect of dislocations on minority carrier effective diffusion length [J. Appl. Phys. 84, 2656 (1998)]. Experimental data measured on thin-film solar cells show a strong decrease of open circuit voltage V-oc with an increase in defect density. The analysis of the recombination currents indicates that V-oc is largely reduced by space charge region recombination. For a quantitative study on the relationship between dislocation density, effective diffusion length, and V-oc the data are fitted with an extended version of Donolato's model. Taking into account the base recombination current as well as the space charge region recombination current, the modeled curves fit very well to the experimental data. However, satisfactory fitting results require that the region of high recombination is set wider than the "effective depletion region width," which is calculated from the electrical field strength in a planar p-n junction. This effect can be explained with the assumption of a geometrical enlargement of the p-n junction due to defects like dislocations

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“…31 Later they modified their model and explained their experimental findings by preferential diffusion of phosphorus at grain boundaries. ͑9͔͒.…”

Section: ͑9͒mentioning

confidence: 99%

Effect of dislocations on open circuit voltage in crystalline silicon solar cells

Kieliba

Riepe

Warta

2006

Journal of Applied Physics

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Photovoltaics literature survey (No. 4)

Keevers

2000

Prog. Photovolt: Res. Appl.

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In order to help keep readers up‐to‐date in the field each issue of Progress in Photovoltaics will contain a list of recently published journal articles most relevant to its aims and scope. This list is drawn primarily from recent issues of IEEE Transactions on Electron Devices, Journal of Applied Physics, Progress in Photovoltaics, Solar Energy and Solar Energy Materials and Solar Cells, with additional journals surveyed if space permits. To assist the reader, the list is separated into broad categories, but please note these classifications are by no means strict. Also note that inclusion in the list is not an endorsement of a paper's quality. Copyright © 2000 John Wiley & Sons, Ltd.

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Thin-film polycrystalline Si solar cells on foreign substrates: film formation at intermediate temperatures (700–1300 °C)

et al. 2004

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On the behaviour of p-n junction solar cells made in fine-grained silicon layers

Cited by 14 publications

References 11 publications

Effect of dislocations on open circuit voltage in crystalline silicon solar cells

Effect of dislocations on open circuit voltage in crystalline silicon solar cells

Photovoltaics literature survey (No. 4)

Thin-film polycrystalline Si solar cells on foreign substrates: film formation at intermediate temperatures (700–1300 °C)

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