On the bulk β-Ga2O3 single crystals grown by the Czochralski method

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

“…[122] At this point in time, Ga 2 O 3 wafers can be fabricated in large volumes and at reasonable cost-with even lower costs possible should demand materialize. These wafers are fabricated from bulk single crystals synthesized by a variety of melt-growth techniques such as float-zone, [120,123] Czochralski, [124,125] vertical Bridgman, [126] and edge-defined film-fed growth (EFG) methods. [127][128][129] To date, EFG has an advantage over the other melt-growth methods in producing such wafers.…”

Ordinary dielectric function of corundumlike α−Ga2O3 from 40 meV to 20 eV

“…It has long been known that Ga 2 O 3 crystallizes in several different polytypes [6], each with distinct physical properties. The thermodynamically stable phase is the monoclinic β phase which shows great potential for use as substrate material because it can be synthesized in thick boules [4,[7][8][9]. Due to its high chemical and thermal stability matched with a large band gap and high breakdown voltage, this polytype has received increasing attention during the last decade.…”

High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge

“…1,2 b-Ga 2 O 3 also has the advantage of a native substrate that can be synthesized in bulk by melt growth techniques with Sn and compensating Fe and Mg impurity doping. [3][4][5] Further, homoepitaxial channel conductivity for field effect transistor (FET) device applications has been demonstrated by Sn and Si doping using both molecular beam epitaxy (MBE) and metalorganic vapour phase epitaxy (MOVPE). 6,7 Disadvantages include low thermal conductivity 8 and high hole effective mass.…”