On the C-V characteristics of nanoscale strained gate-all-around Si/SiGe MOSFETs

Kumari, Amrita; Kumar, Somesh; Sharma, T. K.; Das, Mausumi

doi:10.1016/j.sse.2019.02.006

Cited by 8 publications

(2 citation statements)

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“…Finally, HfO2/TiN/W deposition can be used as metal gate for lateral GAA NWs [112]. However, the preparation process of nanowires faces some challenges, e.g., the control of nanowire sizes [113], and its ideal circular shape in cross section [114]. When hGAAFETs are processed, SiGe is used as a sacrificial layer and it has to be completely removed while retaining Si.…”

Section: Figure 21mentioning

confidence: 99%

“…The diameter of the NWs is determined by the size of the catalyst (catalytic seed) and related to the growth direction, and the length is determined by the flow rate and the time of the precursor vapor [117]. However, the preparation process of nanowires faces some challenges, e.g., the control of nanowire sizes [113], and its ideal circular shape in cross section [114]. When hGAAFETs are processed, SiGe is used as a sacrificial layer and it has to be completely removed while retaining Si.…”

Section: Figure 21mentioning

confidence: 99%

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State of the Art and Future Perspectives in Advanced CMOS Technology

et al. 2020

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The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today’s transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore’s law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.

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Section: Figure 21mentioning

confidence: 99%