On the calculation of electron mobility in In0.53Ga0.47As

Chin, V.W.L.; Osotchan, Tanakorn; Tansley, T.L.

doi:10.1016/0038-1101(92)90157-8

Cited by 9 publications

(3 citation statements)

References 28 publications

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“…It was found that the samples have a compensation ratio of approximately 0.30 and 0.20-0.25 for x = 0.10 and 0.50, respectively at 300 K and 80 K, these compensation ratios agree well with the vapor phase epitaxial grown samples [11]. These relatively low compensation values are similar to those for high purity MBE and MOVPE grown GaAs [12] and In x Ga 1-x As [13]. The mobility was found to be 10372 cm 2 /Vs for x = 0.50 at 80K, which has a low compensation ratio of 0.2-0.25.…”

Section: Effect Of As Composition On Carrier Concentration and Mobilitysupporting

confidence: 67%

Relaxed InAsP layers grown on step graded InAsP buffers by solid source MBE

et al. 2002

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Si-doped InAsxP1-x layers with As mole fractions ranging from 0.05 to 0.50 were grown on InAsxP1-x step-graded buffer layers on InP substrates by solid source molecular beam epitaxy. The growth parameters consisted of a P:In flux ratio of 7:1, a growth temperature of ∼ 485°C, a growth rate of 2.2 Å/s, and an As:In flux ratio of 0.37-2.36 for varying As mole fractions. The As mole fraction and the layer relaxation were determined using triple axis x-ray diffraction measurements. Near complete relaxation (>93%) was achieved for all Si-doped InAsxP1-x epilayers. The structural morphology indicated that the InAsxP1-x graded buffer layers were effective in relieving the lattice mismatch strain as evidenced by a well-developed crosshatch morphology and low rms surface roughness. The electron concentration, mobility, and Si donor activation energy for each InAsxP1-x composition were determined using temperature dependent Hall measurements. At a constant electron carrier concentration of %3.5×1016 cm-3, the 300 K carrier mobility increased from 2700 to 4732 cm2/V-sec with increasing As mole fraction from 0.05 to 0.50.

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Section: Effect Of As Composition On Carrier Concentration and Mobilitysupporting

confidence: 67%

Relaxed InAsP layers grown on step graded InAsP buffers by solid source MBE

et al. 2002

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“…[20][21][22] In n-GaAs:Si, the electron mobility after neutralization of silicon donors by hydrogen significantly increases and becomes equal to or even higher than the electron mobility found in as-grown n-GaAs:Si with the same effective doping level. 23 However, in Al x Ga 1Ϫx AS:Si alloys with xϭ0.27, hydrogenation leads to a significant reduction of the active silicon donor concentration but also to a decrease of the electron mobility due to an unknown dominant scattering mechanism.…”

Section: Resultsmentioning

confidence: 93%

Transport properties of hydrogenated p-GaInAs doped with carbon

Theys

Bourgeois

Chevallier

et al. 1996

Journal of Applied Physics

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Evidence for photoluminescence band in ptype Al0.67Ga0.33As related to nonequilibrium DX− centers Very high carbon δdoping concentration in Al x Ga1−x As grown by metalorganic vapor phase epitaxy using trimethylaluminum as a doping precursor Highly carbon-doped Ga 0.47 In 0.53 As layers grown by chemical beam epitaxy have been exposed to a deuterium plasma. Deuterium diffusion profiles reflect very strong C-D interactions. Concerning electronic transport properties, from p-type when as-grown, these GaInAs samples turn to n-type after plasma exposure. Annealings of deuterated layers have also been performed. They show that temperatures as high as 450°C must be reached before p-type conductivity is fully restored in the material.

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“…Ga 0.47 In 0.53 As shows the highest electron mobility among the considered compounds at both temperatures with measured 300 and 77 K values comparable to existing reports for similar carrier concentrations. 27 At 77 K, GaAs 0.51 Sb 0.49 exhibits a notable rise in the electronic mobility for electron densities n < 2 Â 10 18 /cm 3 due to a depopulation of the L-valley, and a transition to a C-valley dominated transport regime-the effect is used to determine D CL . The observed mobility variation with carrier concentration provides the first direct evidence of the role of the L-valley population in GaAs 0.51 Sb 0.49 at higher electron densities.…”

mentioning

confidence: 99%

Г-L intervalley separation and electron mobility in GaAsSb grown on InP: Transport comparison with the GaInAs and GaInAsSb alloys

Bolognesi

Ostinelli

2021

Applied Physics Letters

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GaAs 0.51 Sb 0.49 is lattice-matched to InP and finds electron transport applications in base or absorber layers in high-speed heterostructure bipolar transistors or photodiodes, because its staggered ("type-II") band alignment with InP favors electron injection across abrupt heterojunctions. Little remains known about electron transport properties and band structure details of GaAs x Sb 1Àx near x ¼ 0.5. Particularly, based on the C-L intervalley separation in binary constituents (D CL ¼ 84 meV in GaSb and 290 meV in GaAs at 300 K), interpolation suggests a low C-L separation in GaAs 0.51 Sb 0.49 before considering energy gap bowing effects. To gain insight into electron transport in GaAs 0.51 Sb 0.49 , we characterized experimental Hall electron mobilities vs carrier concentration at 300 and 77 K in n-type GaAs 0.51 Sb 0.49 , Ga 0.47 In 0.53 As, and Ga 0.76 In 0.24 As 0.67 Sb 0.33 alloys nearly matched to InP. In marked contrast to the other two alloys, GaAs 0.51 Sb 0.49 exhibits a sharp rise in 77 K electron mobility, which evidences L-valley de-population for lower electron concentrations. A two-band transport analysis reveals a C-L valley separation D CL ¼ 91 meV at 77 K, significantly lower than values recommended in the literature. Based on the reported temperature variations of D CL in GaAs and GaSb, 84 < D CL < 95 meV is expected at 300 K. The corresponding GaAs x Sb 1Àx L-valley bowing parameter is c L ¼ 1.63 eV, significantly higher than the 1.1-1.2 eV recommended in the literature. In contrast to GaAs x Sb 1Àx , GaInAsSb grown on InP displays a strong alloy scattering, which limits its low-temperature electron mobility.

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On the calculation of electron mobility in In0.53Ga0.47As

Cited by 9 publications

References 28 publications

Relaxed InAsP layers grown on step graded InAsP buffers by solid source MBE

Relaxed InAsP layers grown on step graded InAsP buffers by solid source MBE

Transport properties of hydrogenated p-GaInAs doped with carbon

Г-L intervalley separation and electron mobility in GaAsSb grown on InP: Transport comparison with the GaInAs and GaInAsSb alloys

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