On the capacitance-voltage modeling of strained quantum-well MODFETs

Manzoli, José Eduardo; Romero, Murilo A.; Hipólito, Oscar

doi:10.1109/3.736099

Cited by 14 publications

(30 citation statements)

References 21 publications

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“…Schrödinger equations, 9 resulting in a charge density ratio of about 15. Given the uncertainty in some device parameters, such as the surface potential at the air/semiconductor interface and the background, nonintentional doping concentration in the buffer, which are of paramount importance in the quantummechanical calculation of interface carrier density, we found the results satisfactory, and no fitting attempt was made to match both ratios.…”

Section: Discussionmentioning

confidence: 99%

The role of the AlGaAs doping level on the optical gain of two-dimensional electron gas photodetectors

Nabet

Romero

Cola

et al. 2004

Journal of Elec Materi

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We compare the optical response of two modulation-doped heterojunction photodetectors with identical growth structure, differing only in the doping level of the wide band material. The larger photoresponse of the higher doped device cannot be explained as photoconductive gain because neither the transit time nor the recombination lifetimes are substantially altered by the change in doping. Alternatively, we propose to explain the results on the basis of an optical gating effect. It is shown that proper control of the two-dimensional electron gas (2-DEG) channel population in dark conditions allows one to optimize optical responsivity and external quantum efficiency.

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Section: Discussionmentioning

confidence: 99%

The role of the AlGaAs doping level on the optical gain of two-dimensional electron gas photodetectors

Nabet

Romero

Cola

et al. 2004

Journal of Elec Materi

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“…The general Hamiltonian as proposed in equation (1) is specifically tailored to deal with strained heterostructures (Manzoli et al, 1998). The kinetic energy operator was originally suggested by Einevoll (1990), while the effective potential operator V ef is given as the sum of four terms according to Luttinger-Kohn (1955) formulation (Laux and Stern, 1986):…”

Section: Numerical Formulation 1 General Methodsmentioning

confidence: 99%

“…For completeness, we have also included an exchange-correlation term, V xc (x, y), while the strain caused by lattice mismatch due, for example, to the insertion of an InGaAs pseudomorphic layer in between the Al x Ga 12 x As/GaAs heterojunction can be account for by the third term of the right side of equation (2). In this term, C 1 is the conduction-band deformation potential and 1 xx , 1 yy and 1 zz are the strain components (Manzoli et al, 1998). The Poisson equation, which yields the Hartree term, is given by:…”

Section: Numerical Formulation 1 General Methodsmentioning

confidence: 99%

“…The Fermi-level position E F is computed from the usual charge neutrality condition and the above formulation (equations (1)- (5)) must be solved self-consistently in real space. Specifically, the eigenstates of the Schrödinger equation are numerically calculated by using a split-operator method through a non-uniform finite difference discretization scheme (Manzoli et al, 1998), under the boundary conditions that the wavefunction must vanish at the substrate, metal contacts and semiconductor-air interfaces. Meanwhile, the 2D Poisson equation is solved by using the relaxation method in the FTCS scheme (Garcia, 2000), with a non-uniform mesh.…”

Section: Numerical Formulation 1 General Methodsmentioning

confidence: 99%

“…reducing the calculation to a much simpler problem, similar to the unidimensional quantization case (Manzoli et al, 1998). Finally, our theoretical C-V profile was computed by using a quasi-static approach, in which the gate capacitance per unit area is given by the total charge variation caused by a small voltage change around a given bias point.…”

Section: Quantum Wire Transistorsmentioning

confidence: 99%

See 2 more Smart Citations

A novel self consistent calculation approach for the capacitance‐voltage characteristics of semiconductor quantum wire transistors based on a split‐gate configuration

Ragi

Nobrega

Romero

2012

COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering

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Purpose -The purpose of this paper is to develop an efficient numerical algorithm for the self-consistent solution of Schrodinger and Poisson equations in one-dimensional systems. The goal is to compute the charge-control and capacitance-voltage characteristics of quantum wire transistors. Design/methodology/approach -The paper presents a numerical formulation employing a non-uniform finite difference discretization scheme, in which the wavefunctions and electronic energy levels are obtained by solving the Schrödinger equation through the split-operator method while a relaxation method in the FTCS scheme ("Forward Time Centered Space") is used to solve the two-dimensional Poisson equation. Findings -The numerical model is validated by taking previously published results as a benchmark and then applying them to yield the charge-control characteristics and the capacitance-voltage relationship for a split-gate quantum wire device. Originality/value -The paper helps to fulfill the need for C-V models of quantum wire device. To do so, the authors implemented a straightforward calculation method for the two-dimensional electronic carrier density n(x,y). The formulation reduces the computational procedure to a much simpler problem, similar to the one-dimensional quantization case, significantly diminishing running time.

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Accurate and fully analytical expressions for quantum energy levels in finite potential wells for nanoelectronic compact modeling

2021

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In this paper, we present fully analytical closed-form expressions to provide the energy levels of finite quantum wells. The model accounts for unequal electronic effective masses in the well and barrier regions. The analytical expressions were validated by comparing the results provided by our model with those arising from the numerical solution of the eigenenergy transcendental equations. As a result, excellent accuracy is demonstrated within the parameter space investigated.

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On the capacitance-voltage modeling of strained quantum-well MODFETs

Cited by 14 publications

References 21 publications

The role of the AlGaAs doping level on the optical gain of two-dimensional electron gas photodetectors

The role of the AlGaAs doping level on the optical gain of two-dimensional electron gas photodetectors

A novel self consistent calculation approach for the capacitance‐voltage characteristics of semiconductor quantum wire transistors based on a split‐gate configuration

Accurate and fully analytical expressions for quantum energy levels in finite potential wells for nanoelectronic compact modeling

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