On the character of the optical transitions in closed-shell transition metal oxides doped with Bi<sup>3+</sup>

Amer, M.; Boutinaud, Philippe

doi:10.1039/c6cp07638f

Cited by 30 publications

(30 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…For example, the lowest excitation bands of the UV and VIS emissions completely coincide in La 2 Zr 2 O 7 :Bi [120]. This indicates that the VIS emission of La 2 Zr 2 O 7 :Bi, ascribed in [120] to the impurity trapped exciton, is excited in the 1 S 0 → 3 P 1 absorption band of Bi 3+ (4.32 eV) [7,64,65] even at 4.2 K, despite the fact that the lowest calculated MMCT energy in this material is 4.88 eV [65] or 5.06 eV [10]. In our opinion, the intensity redistribution between the UV and VIS emissions observed in this work can be caused by the thermally stimulated release of an electron from the 3 P level of Bi 3+ into CB.…”

Section: On the Origin Of The Excited States Responsible For The Vis mentioning

confidence: 88%

“…In [65], an empirical model, proposed earlier for Pr 3+ -and Tb 3+ -doped d 0 closed-shell transition metal compounds, was applied to predict the energy position of the MMCT bands in various Bi 3+ -doped closed-shell d 0 transition metal (M n+ ) complex oxides. The dependence of the energy positions of the Bi 3+ -related absorption bands E abs on the ratio between the optical electronegativities X opt (M n+ ) of the d 0 metal cations and the shortest Bi 3+ -M n+ interatomic distances was found to be linear.…”

Section: On the Origin Of The Excited States Responsible For The Vis mentioning

confidence: 99%

Section: On the Origin Of The Excited States Responsible For The Vis mentioning

confidence: 99%

“…In [7,64,65], the energies of the 1 S 0 → 3 P 1 transitions of a Bi 3+ ion and the Bi 3+ → M n+ MMCT transitions were calculated for many Bi 3+ -doped compounds. In a few cases, e.g., in YVO 4 :Bi, these energies were obtained to be very close (3.779 eV and 3.778 eV, respectively [65]). As both these energies are close to the energy of the lowest-energy excitation band of the VIS emission in YVO 4 :Bi (3.78 eV), in principle, both the 1 S 0 → 3 P 1 transitions of a Bi 3+ ion and the Bi 3+ → V 5+ MMCT transitions could be considered as responsible for the lowest-energy Bi 3+ -related excitation band in YVO 4 :Bi.…”

Section: On the Origin Of The Excited States Responsible For The Vis mentioning

confidence: 99%

“…In [1,3], this band was ascribed to MMCT and in [76], to the 1 S 0 → 3 P 1 transitions. However, in most of the considered materials, the position of the lowest-energy excitation band of the VIS emission and the MMCT energy (see, e.g., [10,65]) are significantly different. For example, in Lu 3 Al 5 O 12 :Bi, the MMCT energy is 5.95 eV [10] while the lowest excitation band of the 2.6 eV emission is located at 4.6 eV.…”

Section: On the Origin Of The Excited States Responsible For The Vis mentioning

confidence: 99%

See 4 more Smart Citations

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

et al. 2020

View full text Add to dashboard Cite

Bi-doped compounds recently became the subject of an extensive research due to their possible applications as scintillator and phosphor materials. The oxides co-doped with Bi3+ and trivalent rare-earth ions were proposed as prospective phosphors for white light-emitting diodes and quantum cutting down-converting materials applicable for enhancement of silicon solar cells. Luminescence characteristics of different Bi3+-doped materials were found to be strongly different and ascribed to electronic transitions from the excited levels of a Bi3+ ion to its ground state, charge-transfer transitions, Bi3+ dimers or clusters, radiative decay of Bi3+-related localized or trapped excitons, etc. In this review, we compare the characteristics of the Bi3+-related luminescence in various compounds; discuss the possible origin of the corresponding luminescence centers as well as the processes resulting in their luminescence; consider the phenomenological models proposed to describe the excited-state dynamics of the Bi3+-related centers and determine the structure and parameters of their relaxed excited states; address an influence of different interactions (e.g., spin-orbit, electron-phonon, hyperfine) as well as the Bi3+ ion charge and volume compensating defects on the luminescence characteristics. The Bi-related luminescence arising from lower charge states (namely, Bi2+, Bi+, Bi0) is also reviewed.

show abstract

Section: On the Origin Of The Excited States Responsible For The Vis mentioning

confidence: 88%

Section: On the Origin Of The Excited States Responsible For The Vis mentioning

confidence: 99%

Section: On the Origin Of The Excited States Responsible For The Vis mentioning

confidence: 99%

Section: On the Origin Of The Excited States Responsible For The Vis mentioning

confidence: 99%

Section: On the Origin Of The Excited States Responsible For The Vis mentioning

confidence: 99%

See 3 more Smart Citations

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

et al. 2020

View full text Add to dashboard Cite

show abstract

Photostimulated Defect Creation Processes in the Undoped and Bi³⁺‐Doped Ca₃Ga₂Ge₃O₁₂ Garnets

Krasnikov

Цюмра

Vasylechko

et al. 2021

Physica Status Solidi (b)

View full text Add to dashboard Cite

Bismuth-doped compounds, due to their excellent luminescence performance and tunable luminescence properties, attract increasing attention as promising materials for applications in different fields, e.g., in fiber lasers, broadband optical amplifiers, bioimaging, scintillators, light-emitting diodes, and solar cells (see, e.g., refs. [1-12] and references therein). Among them, the materials where the trivalent Bi 3þ ion substitutes for a trivalent rare-earth ion were investigated in most detail (see, e.g., review articles [1][2][3][4]13] and references therein). However, due to the relatively high cost and limited resources of rare earths, their high supply disruption risk, and the environmental issues related to their mining and refinement, these materials should be replaced by highly effective rare-earth-free compounds. Recently, these problems were analyzed in detail, and alternative materials suitable for various lighting applications were considered (see, e.g., Pavel et al. and Ricci [14,15] and references therein).In this work, the Ca 3 Ga 2 Ge 3 O 12 :Bi garnet was chosen for investigation as one of the rare-earth-free compounds. In the crystal lattice of Ca 3 Ga 2 Ge 3 O 12 , the Ca 2þ , Ga 3þ , and Ge 4þ ions are located in the dodecahedral, octahedral, and tetrahedral sites and surrounded by eight, six, or four oxygen ions, respectively. [16,17] The first detailed investigation of undoped and Bi 3þ -doped Ca 3 Ga 2 Ge 3 O 12 garnets by the X-ray diffraction and time-resolved photoluminescence spectroscopy methods was conducted in our recent work. [18] It was found that in the luminescence spectrum of the undoped Ca 3 Ga 2 Ge 3 O 12 sample, the main complex emission band is peaking at 2.74 eV and excited around 5.04 eV and in the band-to-band absorption region (with E exc ≥ 5.5 eV). It was shown that this emission is not of exciton-like origin and suggested that the 5.04 eV excitation results in the charge-transfer transitions from the oxygen O 2À levels at the top of the valence band (VB) to the ground state of intrinsic defects.In the luminescence spectrum of Ca 3 Ga 2 Ge 3 O 12 :Bi, the Bi 3þrelated ultraviolet (UV) and visible (vis) emission bands were observed under excitation in the complex %4.45 eV absorption band of Bi 3þ ions corresponding to the 1 S 0 ! 3 P 1 electron transitions of a free Bi 3þ ion. From the temperature dependences of the luminescence decay kinetics, the origin, structure, and parameters of the relaxed excited states (RESs) corresponding to each emission band were determined. It was concluded that the UV and vis emissions are of different origin. Four UV emission bands of Ca 3 Ga 2 Ge 3 O 12 :Bi (located around 3.9 and 3.06 eV) were shown to arise from the triplet RES of Bi 3þ ions having different nearest surroundings; i.e., these bands correspond to the 3 P 1,0 ! 1 S 0 transitions of a free Bi 3þ ion. Indeed, the spin-orbit splitting energies of their triplet RES are rather large and vary from 56 to 100 meV, which is characteristic for the triplet

show abstract

Enhanced multimodal behaviour of Tm3+/Yb3+ co-doped YTaO4 ceramic material through Bi3+ activation and sensitization: Application as a spectral converter

Roy

Dwivedi

Kumar

et al. 2020

Ceramics International

View full text Add to dashboard Cite

On the character of the optical transitions in closed-shell transition metal oxides doped with Bi³⁺

Cited by 30 publications

References 34 publications

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

Photostimulated Defect Creation Processes in the Undoped and Bi³⁺‐Doped Ca₃Ga₂Ge₃O₁₂ Garnets

Enhanced multimodal behaviour of Tm3+/Yb3+ co-doped YTaO4 ceramic material through Bi3+ activation and sensitization: Application as a spectral converter

Contact Info

Product

Resources

About

On the character of the optical transitions in closed-shell transition metal oxides doped with Bi3+

Cited by 30 publications

References 34 publications

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

Photostimulated Defect Creation Processes in the Undoped and Bi3+‐Doped Ca3Ga2Ge3O12 Garnets

Enhanced multimodal behaviour of Tm3+/Yb3+ co-doped YTaO4 ceramic material through Bi3+ activation and sensitization: Application as a spectral converter

Contact Info

Product

Resources

About

On the character of the optical transitions in closed-shell transition metal oxides doped with Bi³⁺

Photostimulated Defect Creation Processes in the Undoped and Bi³⁺‐Doped Ca₃Ga₂Ge₃O₁₂ Garnets