On the chemical and mechanical properties of sputtered silicon nitride films

Jansen, Frank; Day, Anthony R.; Wamboldt, Leonard

doi:10.1016/0040-6090(92)90734-s

Thin Solid Films

1992

DOI: 10.1016/0040-6090(92)90734-s

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On the chemical and mechanical properties of sputtered silicon nitride films

Frank Jansen¹,

Anthony R. Day²,

Leonard Wamboldt³

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Cited by 8 publications

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“…The argumentation can also be proved by the etch rate of silicon nitride film in HF solution [15]. In order to low etch rate and measure it more accurately, commercial 40 % HF solution was diluted by DI water (40%HF:H 2 0=1ml:20ml) in our experiments.…”

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confidence: 90%

Wet Etching Studies of PECVD Silicon Nitride Films in Doped TMAH Solutions

Han

Feng

Wang

2012

AMR

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It has been reported that the etch rate of exposed aluminum lines and pads on MEMS chips can be significantly reduced by dissolving an appropriate amount of silicon (or silicic acid, water glass) and ammonium persulfate (AP) in TMAH solution. However the etch rates of the PECVD silicon nitride films，which is usually underlying aluminum lines and pad, were rarely reported in previous literatures. In this paper, silicon nitride films of high compressive stress, low compressive stress, micro-stress, low tensile stress and high tensile stress are prepared by adjusting the flow ratio of SiH4 to NH3 and plasma power. Then the films are etched in four kinds of previously reported doped TMAH solutions. The experimental results show that silicon nitride films depositing at low flow ratio of SiH4 to NH3 and lager RF power were etched more slowly in doped TMAH solution than that of depositing at high flow ratio of SiH4 to NH3 and low RF power.

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confidence: 90%

Wet Etching Studies of PECVD Silicon Nitride Films in Doped TMAH Solutions

Han

Feng

Wang

2012

AMR

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Effect of sputtering-gas pressure on properties of silicon nitride films produced by helicon plasma sputtering

McKenzie

McFall

et al. 2001

Thin Solid Films

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Structure and composition studies for silicon nitride thin films deposited by single ion bean sputter deposition

et al. 1997

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On the chemical and mechanical properties of sputtered silicon nitride films

Cited by 8 publications

References 12 publications

Wet Etching Studies of PECVD Silicon Nitride Films in Doped TMAH Solutions

Wet Etching Studies of PECVD Silicon Nitride Films in Doped TMAH Solutions

Effect of sputtering-gas pressure on properties of silicon nitride films produced by helicon plasma sputtering

Structure and composition studies for silicon nitride thin films deposited by single ion bean sputter deposition

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