On the choice of nonlinear optical and semiconductor converters of femtosecond laser pulses into terahertz range

Назаров, М. М.; Shkurinov, A. P.; Angeluts, A. A.; Sapozhnikov, Dmitry

doi:10.1007/s11141-010-9168-1

Cited by 36 publications

(33 citation statements)

References 24 publications

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“…GaSe has a broadband transparency window over the range of 0.62-20 mm for non-polarized light continues at wavelengths o50 mm 2,3 . Other attractive physical properties of GaSe are its prodigious birefringence B 5 0.375 at l 5 10.6 mm and 0.79 at terahertz (THz) range 4 , and very high second-order nonlinear susceptibility d 22 5 54 pm V 21 at 10 mm 5 and 24.3 pm/V in the THz band 6 . Among the mid-infrared (IR) anisotropic nonlinear crystals, GaSe has the second highest optical damage threshold 7,8 and thermal conductivity in the plane of the (0001) layers (0.162 W(cm?deg) 21 ), accompanied by large thermal capacity C p 5 47.9 J (mol?deg) 21 and density 5.05 g cm 23 , close coefficients of linear thermal expansion a | 5 10.8?10 26 deg 21 and a H 5 9.1?10 26 deg 21 , and low two-photon absorption coefficients 0.2-0.5 cm 21 GW 21 for 0.7-0.8 mm pumping.…”

Section: Introductionmentioning

confidence: 99%

Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

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In this review, we introduce the current state of the art of the growth technology of pure, lightly doped, and heavily doped (solid solution) nonlinear gallium selenide (GaSe) crystals that are able to generate broadband emission from the near infrared (IR) (0.8 mm) through the mid-and far-IR (terahertz (THz)) ranges and further into the millimeter wave (5.64 mm) range. For the first time, we show that appropriate doping is an efficient method controlling a range of the physical properties of GaSe crystals that are responsible for frequency conversion efficiency and exploitation parameters. After appropriate doping, uniform crystals grown by a modified technology with heat field rotation possess up to 3 times lower absorption coefficient in the main transparency window and THz range. Moreover, doping provides the following benefits: raises by up to 5 times the optical damage threshold; almost eliminates two-photon absorption; allows for dispersion control in the THz range independent of the mid-IR dispersion; and enables crystal processing in arbitrary directions due to the strengthened lattice. Finally, doped GaSe demonstrated better usefulness for processing compared with GaSe grown by the conventional technology and up to 15 times higher frequency conversion efficiency. INTRODUCTIONThe e-polytype of gallium selenide (hereinafter GaSe) has been known since 1934 1 and promises efficient optical frequency conversion and detection over a large range of wavelengths. The performance potential of GaSe, which belongs to the point group symmetry 6m2, can be attributed to its extreme physical properties. GaSe has a broadband transparency window over the range of 0.62-20 mm for non-polarized light continues at wavelengths o50 mm 2,3 . Other attractive physical properties of GaSe are its prodigious birefringence B 5 0.375 at l 5 10.6 mm and 0.79 at terahertz (THz) range 4 , and very high second-order nonlinear susceptibility d 22 5 54 pm V 21 at 10 mm 5 and 24.3 pm/V in the THz band 6 . Among the mid-infrared (IR) anisotropic nonlinear crystals, GaSe has the second highest optical damage threshold 7,8 and thermal conductivity in the plane of the (0001) A GaSe crystal was first used for laser frequency conversion in the mid-IR in 1972 9,10 . In subsequent years, GaSe was widely used for inlab mid-IR applications 5 . Over the past two decades, GaSe has been among the most promising nonlinear optical crystals for efficient generation of ultrabroadband radiation 0.8-5640 mm (with the

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Section: Introductionmentioning

confidence: 99%

Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

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“…5 10 cm , while for the metal it is known to be about 10 cm . We characterized the THz properties of our sample using a classical THz time-domain spectroscopy system already described in [27] and [28]. At the sample location, the THz beam is almost parallel with a 15-mm diameter and it is p-polarized.…”

Section: Sample Characterizationmentioning

confidence: 99%

Characterization of Highly Doped Si Through the Excitation of THz Surface Plasmons

Назаров

Shkurinov

Garet

et al. 2015

IEEE Trans. THz Sci. Technol.

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We excite surface plasmons (SPs) at the surface of highly doped Si using a prism coupler, and we study the propagation properties of these SPs in order to characterize the terahertz (THz) response of the doped semiconductor. Thanks to the long interaction length of the propagating SP with the substrate material, the method is more sensitive than classical THz time-domain spectroscopy in reflection or in transmission. Moreover, we propose a new technique based on measuring the SP signal, for which the delicate problem of accurately measuring the phase of the signal is solved. All of these different experiment techniques allow us to determine reliably the dielectric function of highly doped Si in the THz range. It appears that the experimentally determined values differ strongly from the ones calculated with a Drude model.

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“…It is due to extra ordinary physical properties: the extreme wide transparency range 0.62-20 µm continue from 50-60 µm further into the THz range, low dispersion, large electrooptical coefficient r 41 =14.4 pm/V and second order susceptibility coefficient d 22 =24.3 pm/V in the THz range 3 . The giant birefringence B=0.35 in the mid-IR 4 and about 0.79 in the THz range 5 that allows phase-matched down-conversion of long and ultrashort pulses almost all over the entire transparency range 3 . It possesses low nonlinear absorption coefficient.…”

Section: Introductionmentioning

confidence: 99%

Modification and ab-initio spectroscopic application of modified commerce terahertz spectrometer by using homemade parts

et al. 2015

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Ab-initio study on modification of commerce terahertz spectrometer with time resolution Z-3 (Zomega, USA) by substitution of ZnTe & GaP detectors and LT-GaAs generator for homemade of pure and S-doped GaSe is carried out. It was established that in spite of not optimized parameters pure and doped GaSe:S(0.3 mass%) crystal are comparable, relatively, in generation efficiency and detection sensitivity to commerce units due to lower nonlinear optical loss and much higher damage threshold. The advantages are in force from pump fluences of below 5 mJ/cm 2 for pure GaSe. The closer S-doping to optimal concentration, the lover fluences resulting in the advantages. Pure and S-doped GaSe demonstrate higher reliability and larger dynamic range of operation. Recorded absorption spectra well match known spectra.

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On the choice of nonlinear optical and semiconductor converters of femtosecond laser pulses into terahertz range

Cited by 36 publications

References 24 publications

Doped GaSe crystals for laser frequency conversion

Doped GaSe crystals for laser frequency conversion

Characterization of Highly Doped Si Through the Excitation of THz Surface Plasmons

Modification and ab-initio spectroscopic application of modified commerce terahertz spectrometer by using homemade parts

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