On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

Martens, Koen; Chui, Chi On; Brammertz, Guy; Jaeger, B. De; Kuzum, Duygu; Meuris, Marc; Heyns, Marc; Krishnamohan, Tejas; Saraswat, Krishna C.; Maes, H.E.; Groeseneken, G.

doi:10.1109/ted.2007.912365

Cited by 371 publications

(229 citation statements)

References 24 publications

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“…With increasing strain in Ge the weak inversion (minority carriers) appears before the depletion (majority carriers). This effect has been already reported in literature for cubic Ge 28 . Inversion emerges at smaller applied bias and becomes stronger with the decrease of bandgap, e.g.…”

supporting

confidence: 85%

High-k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors

Wirths

Stange

Pampillón

et al. 2014

ACS Appl. Mater. Interfaces

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We present the epitaxial growth of Ge and Ge 0.94 Sn 0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limited to 350 °C to avoid Sn diffusion. Particular emphasis is placed on the electrical characterization of various high-k dielectrics, as 5 nm Al 2 O 3 , 5 nm HfO 2 , or 1 nmAl 2 O 3 /4 nm HfO 2 , on strained Ge and strained Ge 0.94 Sn 0.06 . Experimental capacitance− voltage characteristics are presented and the effect of the small bandgap, like strong response of minority carriers at applied field, are discussed via simulations.

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supporting

confidence: 85%

High-k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors

Wirths

Stange

Pampillón

et al. 2014

ACS Appl. Mater. Interfaces

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“…However, the equivalent parallel conductance loss is lower on the aqueously treated sample by a factor of ϳ0.32, yielding an approximate peak interface state density of ϳ6 ϫ 10 12 cm −2 eV −1 . It should be noted here that due to the ability of the defects to communicate with both the conduction and the valence bands ͑the In 0.53 Ga 0.47 As energy gap is ϳ0.75 eV͒, the D it values may be an overestimation of the actual D it level, as discussed by Martens et al 26 The profile for the untreated sample, shown in Fig. 6, and the samples treated with H 2 S at 200 and 350°C ͑not shown͒ do not exhibit a peak equivalent parallel conductance loss within the bias range studied.…”

Section: Resultsmentioning

confidence: 82%

Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition

Long

O’Connor

Newcomb³

et al. 2009

Journal of Applied Physics

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In this work results are presented on the structural analysis, chemical composition, and interface state densities of HfO2 thin films deposited by atomic layer deposition (ALD) from Hf[N(CH3)(2)](4) and H2O on In0.53Ga0.47As/InP substrates. The structural and chemical properties are investigated using high resolution cross-sectional transmission electron microscopy and electron energy loss spectroscopy. HfO2 films (3-15 nm) deposited on In0.53Ga0.47As are studied following a range of surface treatments including in situ treatment of the In0.53Ga0.47As surface by H2S exposure at 50-350 degrees C immediately following the metal organic vapor phase epitaxy growth of the In0.53Ga0.47As layer, ex situ treatment with (NH4)(2)S, and deposition on the native oxides of In0.53Ga0.47As with no surface treatment. The structural analysis indicates that the In0.53Ga0.47As surface preparation prior to HfO2 film deposition influences the thickness of the HfO2 film and the interlayer oxide. The complete interfacial self-cleaning of the In(0.53)Gas(0.47)As native oxides is not observed using an ALD process based on the Hf[N(CH3)(2)](4) precursor and H2O. Elemental profiling of the HfO2/In0.53Ga0.47As interface region by electron energy loss spectroscopy reveals an interface oxide layer of 1-2 nm in thickness, which consists primarily of Ga oxides. Using a conductance method approximation, peak interface state densities in the range from 6 x 10(12) to 2 x 10(13) cm(-2) eV(-1) are estimated depending on the surface preparation. (C) 2009 American Institute of Physics. [doi:10.1063/1.3243234

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“…13 It has been shown that the conductance method can give reliable estimates of the midgap D it for high-k/III-V interfaces provided that the D it is sufficiently low, i.e., C ox Ͼ qD it . 8, 21 Furthermore, the movement of conductance peaks in these maps is an indicator of the band bending efficiency as a function of applied bias. 8 Figure 3 shows conductance maps for the 18 nm nitrogen annealed ͓Fig.…”

Section: Fig 2 ͑Color Online͒mentioning

confidence: 99%

Effect of postdeposition anneals on the Fermi level response of HfO2/In0.53Ga0.47As gate stacks

Hwang

Engel‐Herbert

Rudawski

et al. 2010

Journal of Applied Physics

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The electrical characteristics, in particular interface trap densities, oxide capacitance, and Fermi level movement, of metal oxide semiconductor capacitors with HfO 2 gate dielectrics and In 0.53 Ga 0.47 As channels are investigated as a function of postdeposition annealing atmosphere. It is shown, using both conductance and Terman methods, that the Fermi level of nitrogen annealed stacks is effectively pinned at midgap. In contrast, samples annealed in forming gas show a large band bending in response to an applied gate voltage and a reduced midgap interface trap density compared to those annealed in nitrogen.

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On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

Cited by 371 publications

References 24 publications

High-k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors

High-k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors

Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition

Effect of postdeposition anneals on the Fermi level response of HfO2/In0.53Ga0.47As gate stacks

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