On the Crystal Structure of Tribarium Gallate (Ba3Ga2O6)

Kahlenberg, Volker

doi:10.1002/1521-4079(200103)36:3<319::aid-crat319>3.0.co;2-5

Cited by 13 publications

(7 citation statements)

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“…The crystal structure of Sr 3 Si 2 O 4 N 2 was analyzed on the basis of the XRD data with the Ba 3 Ga 2 O 6 structure as a starting model. 42 However, an inevitable problem arises from N/O distribution analysis. X-ray diffraction is not able to effectively distinguish the O and N because of their similar X-ray scattering factors.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

“…34,35 However, Sr 3 Si 2 O 4 N 2 shows a similar ring structure to accommodate six distinctly crystallographic Sr 2+ sites (five fully occupied and one-half occupied), which is isostructural to Ba 3 Ga 2 O 6 . 42 The building unit in Sr 3 Si 2 O 4 N 2 is 12 ring that consists of 12 [SiO 2 N 2 ] tetrahedra, which connect each other by sharing N atoms at bridging positions with a Q 2 link type. 44 While in the 12 ring, O atoms locate at terminal positions.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

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Promising Oxonitridosilicate Phosphor Host Sr₃Si₂O₄N₂: Synthesis, Structure, and Luminescence Properties Activated by Eu²⁺ and Ce³⁺/Li⁺ for pc-LEDs

Wang

Kuang

et al. 2012

Inorg. Chem.

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A novel oxonitridosilicate phosphor host Sr(3)Si(2)O(4)N(2) was synthesized in N(2)/H(2) (6%) atmosphere by solid state reaction at high temperature using SrCO(3), SiO(2), and Si(3)N(4) as starting materials. The crystal structure was determined by a Rietveld analysis on powder X-ray and neutron diffraction data. Sr(3)Si(2)O(4)N(2) crystallizes in cubic symmetry with space group Pa ̅3, Z = 24, and cell parameter a = 15.6593(1) Å. The structure of Sr(3)Si(2)O(4)N(2) is constructed by isolated and highly corrugated 12 rings which are composed of 12 vertex-sharing [SiO(2)N(2)] tetrahedra with bridging N and terminal O to form three-dimensional tunnels to accommodate the Sr(2+) ions. The calculated band structure shows that Sr(3)Si(2)O(4)N(2) is an indirect semiconductor with a band gap ≈ 2.84 eV, which is close to the experimental value ≈ 2.71 eV from linear extrapolation of the diffuse reflection spectrum. Sr(3-x)Si(2)O(4)N(2):xEu(2+) shows a typical emission band peaking at ~600 nm under 460 nm excitation, which perfectly matches the emission of blue InGaN light-emitting diodes. For Ce(3+)/Li(+)-codoped Sr(3)Si(2)O(4)N(2), one excitation band is in the UV range (280-350 nm) and the other in the UV blue range (380-420 nm), which matches emission of near-UV light-emitting diodes. Emission of Sr(3-2x)Si(2)O(4)N(2):xCe(3+),xLi(+) shows a asymmetric broad band peaking at ~520 nm. The long-wavelength excitation and emission of Eu(2+) and Ce(3+)/Li(+)-doped Sr(3)Si(2)O(4)N(2) make them attractive for applications in phosphor-converted white light-emitting diodes.

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Section: ■ Experimental Sectionmentioning

confidence: 99%

Section: ■ Experimental Sectionmentioning

confidence: 99%

Promising Oxonitridosilicate Phosphor Host Sr₃Si₂O₄N₂: Synthesis, Structure, and Luminescence Properties Activated by Eu²⁺ and Ce³⁺/Li⁺ for pc-LEDs

Wang

Kuang

et al. 2012

Inorg. Chem.

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“…It is not possible to find this phosphor in any of the crystallographic databases. However, this phosphor does not seem to be a Type IV, because they refined the structure of these phosphors using the well-known Ca 3 Al 2 O 6 and Ba 3 Ga 2 O 6 structure ( Pa 3 space group). , This means that these phosphors are nothing but the partly substituted composition of a well-known compound, the structure of which has been well-defined and available in the structural database. Moreover, Sr 3 Al 2 O 6 , the structure of which is identical to that of Ca 3 Al 2 O 6 and Ba 3 Ga 2 O 6 , has been used as a phosphor host by Eu 2+ activation, so that it constituted a red phosphor.…”

Section: Novelty Of Led Phosphorsmentioning

confidence: 99%

Discovery of a Phosphor for Light Emitting Diode Applications and Its Structural Determination, Ba(Si,Al)₅(O,N)₈:Eu²⁺

2014

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Most of the novel phosphors that appear in the literature are either a variant of well-known materials or a hybrid material consisting of well-known materials. This situation has actually led to intellectual property (IP) complications in industry and several lawsuits have been the result. Therefore, the definition of a novel phosphor for use in light-emitting diodes should be clarified. A recent trend in phosphor-related IP applications has been to focus on the novel crystallographic structure, so that a slight composition variance and/or the hybrid of a well-known material would not qualify from either a scientific or an industrial point of view. In our previous studies, we employed a systematic materials discovery strategy combining heuristics optimization and a high-throughput process to secure the discovery of genuinely novel and brilliant phosphors that would be immediately ready for use in light emitting diodes. Despite such an achievement, this strategy requires further refinement to prove its versatility under any circumstance. To accomplish such demands, we improved our discovery strategy by incorporating an elitism-involved nondominated sorting genetic algorithm (NSGA-II) that would guarantee the discovery of truly novel phosphors in the present investigation. Using the improved discovery strategy, we discovered an Eu(2+)-doped AB5X8 (A = Sr or Ba, B = Si and Al, X = O and N) phosphor in an orthorhombic structure (A21am) with lattice parameters a = 9.48461(3) Å, b = 13.47194(6) Å, c = 5.77323(2) Å, α = β = γ = 90°, which cannot be found in any of the existing inorganic compound databases.

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“…10 In the BaO-Ga 2 O 3 binary system, multiple crystalline phases may offer new opportunities for transparent ceramic materials. Prior to this work, only four different crystalline phases had been reported in the BaO-Ga 2 O 3 binary system: Ba 4 Ga 2 O 7 , 12 Ba 3 Ga 2 O 6 , [13][14][15] BaGa 2 O 4 , [16][17][18][19] and BaGa 12 O 19 . 20,21 These materials were studied for either their ionic conductivity 15 or luminescence properties.…”

Section: Introductionmentioning

confidence: 99%

BaGa₄O₇, a new A₃BC₁₀O₂₀ crystalline phase: synthesis, structural determination and luminescence properties

et al. 2015

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aThe synthesis, structural determination and luminescence properties of a new barium gallate, BaGa4O7, are reported. This crystalline material can uniquely be obtained by direct cooling from the molten state. The crystallographic structure was determined using a combination of electron, synchrotron and neutron powder diffraction data. BaGa4O7 crystallizes in the monoclinic I2/m space group with a = 15.0688(1) Å, b = 11.7091(1) Å, c = 5.1429(2) Å and β = 91.0452(2)° and can be described as an original member of the A3BC10O20 family. Atypical for this A3BC10O20 structural framework, BaGa4O7 is found to contain exclusively divalent and trivalent cations. In order to maintain overall electroneutrality, a disordered defect type partial substitution of gallium and oxygen ions on barium sites occurs within the pentagonal channels of BaGa4O7. Thanks to the flexibility of this structural framework, BaGa4O7 can be heavily doped by europium and thus is shown to exhibit a strong orange-red luminescence emission at 618 nm under a 393 nm excitation.

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On the Crystal Structure of Tribarium Gallate (Ba3Ga2O6)

Cited by 13 publications

References 14 publications

Promising Oxonitridosilicate Phosphor Host Sr₃Si₂O₄N₂: Synthesis, Structure, and Luminescence Properties Activated by Eu²⁺ and Ce³⁺/Li⁺ for pc-LEDs

Promising Oxonitridosilicate Phosphor Host Sr₃Si₂O₄N₂: Synthesis, Structure, and Luminescence Properties Activated by Eu²⁺ and Ce³⁺/Li⁺ for pc-LEDs

Discovery of a Phosphor for Light Emitting Diode Applications and Its Structural Determination, Ba(Si,Al)₅(O,N)₈:Eu²⁺

BaGa₄O₇, a new A₃BC₁₀O₂₀ crystalline phase: synthesis, structural determination and luminescence properties

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On the Crystal Structure of Tribarium Gallate (Ba3Ga2O6)

Cited by 13 publications

References 14 publications

Promising Oxonitridosilicate Phosphor Host Sr3Si2O4N2: Synthesis, Structure, and Luminescence Properties Activated by Eu2+ and Ce3+/Li+ for pc-LEDs

Promising Oxonitridosilicate Phosphor Host Sr3Si2O4N2: Synthesis, Structure, and Luminescence Properties Activated by Eu2+ and Ce3+/Li+ for pc-LEDs

Discovery of a Phosphor for Light Emitting Diode Applications and Its Structural Determination, Ba(Si,Al)5(O,N)8:Eu2+

BaGa4O7, a new A3BC10O20 crystalline phase: synthesis, structural determination and luminescence properties

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Promising Oxonitridosilicate Phosphor Host Sr₃Si₂O₄N₂: Synthesis, Structure, and Luminescence Properties Activated by Eu²⁺ and Ce³⁺/Li⁺ for pc-LEDs

Promising Oxonitridosilicate Phosphor Host Sr₃Si₂O₄N₂: Synthesis, Structure, and Luminescence Properties Activated by Eu²⁺ and Ce³⁺/Li⁺ for pc-LEDs

Discovery of a Phosphor for Light Emitting Diode Applications and Its Structural Determination, Ba(Si,Al)₅(O,N)₈:Eu²⁺

BaGa₄O₇, a new A₃BC₁₀O₂₀ crystalline phase: synthesis, structural determination and luminescence properties