On the Current Gain of Germanium Filamentary Transistors

Lawrance, R.; Gibson, A.; Granville, J W

doi:10.1088/0370-1301/67/8/304

Cited by 8 publications

(1 citation statement)

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“…Such a calculation involves two rather doubtful assumptions: (i) that the rate of etching is uniform over the target surface, and (ii) that it is u~laffected bj-the Cs ion bombardment. The latter assumption is particularly questiollable in view of the known effect of ionic bombardment on the electrical properties oE se~niconcluctors such as germanium and silicon (9)(10)(11)(12).…”

Section: Introductionmentioning

confidence: 99%

THE RANGE OF Cs¹³⁷ IONS OF KEV ENERGIES IN GERMANIUM

Davies¹,

McIntyre²,

Sims³

1962

Can. J. Chem.

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The range of ions in germanium has been measured a t 4-, 20-, and 40-kev bombardment energy. Two independent methods of determining the depth of penetration were used. The results are in reasonable agreement with our previous range measurements in alu~minurn, and with the recently p~~blished theoretical treatment of Lindhard and Scharff. A possible esplanation has been found for the abnormally large value reported by Bredov for the penetration depth of 4-l;ev C S '~~ ions in germanium.

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Section: Introductionmentioning

confidence: 99%

THE RANGE OF Cs¹³⁷ IONS OF KEV ENERGIES IN GERMANIUM

Davies¹,

McIntyre²,

Sims³

1962

Can. J. Chem.

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Measurement of the injection efficiency of the emitter point contact on germanium in the presence of a drift field

Szilágyi

1960

Acta Physica

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Review of Germanium Surface Phenomena

Kingston

1956

Journal of Applied Physics

177

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Germanium surface behavior has become of great interest recently, chiefly for its importance in the understanding of diode and transistor technology. In general, the surface may be treated as an assemblage of allowed electron states occurring in the normally forbidden energy range. A review of the measurements of the electrical properties suggests that there are two distinct types of state. The "fast" state has a hole or electron capture time not greater than a microsecond and is chiefly involved in the recombination process. The "slow" state has capture times from a millisecond to several minutes and determines the density and type of carrier at the surface. "Fast" states are believed to occur at the interface between the germanium and the oxide layer, and their density of about 10" cm-' is determined by the initial surface treatment. "Slow" states are associated with the structure of the oxide layer and the gaseous ambient and have a density greater than 10 13 cm-'. Since these states determine the conductivity type at the ~urface they contribute to surface "leakage" in diodes and transistors and, because of their long equilibrium ti~es to low-frequency noise. The adsorption of gases such as water vapor, not only controls the density and ene~gy of the "slow" states but also leads to possible electrolytic conduction along the surface, in addition to the normal electron flow in the bulk semiconductor.

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On the Current Gain of Germanium Filamentary Transistors

Cited by 8 publications

References 10 publications

THE RANGE OF Cs¹³⁷ IONS OF KEV ENERGIES IN GERMANIUM

THE RANGE OF Cs¹³⁷ IONS OF KEV ENERGIES IN GERMANIUM

Measurement of the injection efficiency of the emitter point contact on germanium in the presence of a drift field

Review of Germanium Surface Phenomena

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On the Current Gain of Germanium Filamentary Transistors

Cited by 8 publications

References 10 publications

THE RANGE OF Cs137 IONS OF KEV ENERGIES IN GERMANIUM

THE RANGE OF Cs137 IONS OF KEV ENERGIES IN GERMANIUM

Measurement of the injection efficiency of the emitter point contact on germanium in the presence of a drift field

Review of Germanium Surface Phenomena

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Product

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THE RANGE OF Cs¹³⁷ IONS OF KEV ENERGIES IN GERMANIUM

THE RANGE OF Cs¹³⁷ IONS OF KEV ENERGIES IN GERMANIUM