On the definition of the domain growth-rate constant on a two-dimensional substrate

Seki, Kazuhiko

doi:10.1016/j.jcrysgro.2021.126222

Cited by 3 publications

(14 citation statements)

References 25 publications

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“…Here, we present theoretical results on single domain growth by ignoring the influence from the other domains. 23,24 The radial axis is introduced, where the origin is set at the center of the domain. We ignore shape changes during the domain growth and assume an axisymmetric shape of the domain.…”

Section: ■ Single Domain Growthmentioning

confidence: 99%

“…We can show that eq 17 can be also derived from the expression of the radial velocity in terms of the modified Bessel functions in the BCF model. 24,33 The relation R(t) 2 ∝ Dt in the diffusion-controlled limit naturally arises in considering two-dimensional growth of isotropic domain by diffusion, 23,24,32 while the relation R(t) ∝ κ i t has been well-recognized for reaction-controlled growth. 24 ■ BACK-STRESS EFFECT: INTERFERENCE OF…”

Section: ■ Single Domain Growthmentioning

confidence: 99%

“…24,33 The relation R(t) 2 ∝ Dt in the diffusion-controlled limit naturally arises in considering two-dimensional growth of isotropic domain by diffusion, 23,24,32 while the relation R(t) ∝ κ i t has been well-recognized for reaction-controlled growth. 24 ■ BACK-STRESS EFFECT: INTERFERENCE OF…”

Section: ■ Single Domain Growthmentioning

confidence: 99%

“…We noted that the clearer transition from reaction-limited growth to diffusionlimited growth was obtained as the value of C iD was increased. 24 If the migration length along the domain periphery against diffusion length could determine the morphology, C iD might also be an important factor to characterize the morphology.…”

Section: ■ Conclusionmentioning

confidence: 99%

“…21,22 If an isolated domain far away from the other domains is selected to measure the domain size growth rate, the back-stress effect could be minimized. More recently, it is theoretically shown that the growth can be intrinsically suppressed even for a single domain growth by increasing the periphery length; 23,24 the initial (incorporation) reaction-limited domain growth transforms into diffusion-limited growth as the domain size increases.…”

Section: ■ Introductionmentioning

confidence: 99%

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Transition from Reaction- to Diffusion-Limited Growth of Graphene by Chemical Vapor Deposition

Seki

Saiki

2022

Crystal Growth & Design

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Recently, monolayer domain growth has been observed in real time by focusing the radiation emitted from graphene; the method is termed radiation-mode optical microscopy (Rad-OM). By Rad-OM, the incorporation of precursors to graphene rather than the formation of precursors was considered most likely to be the rate-determining factor in the chemical vapor deposition growth of graphene. Here, we scrutinize the observed domain growth and show that the domain growth is decelerated after a certain time period because the rate-determining factor changes from (incorporation) reaction-limited to diffusion-limited as the domain size increases. The transition to the diffusion-limited growth could be caused either by the increase of the periphery length of single domain or by the interference of the diffusion fields from adjacent domains. The distinction between two mechanisms is difficult owing to the similar time-dependence and the long-range nature of the interference of the diffusion fields. Nevertheless, the lower bound of the incorporation velocity into the domain and the upper bound of the desorption rate constant of precursors from the substrate could be estimated by Rad-OM.

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Section: ■ Single Domain Growthmentioning

confidence: 99%

Section: ■ Single Domain Growthmentioning

confidence: 99%

Section: ■ Single Domain Growthmentioning

confidence: 99%

Section: ■ Conclusionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

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Transition from Reaction- to Diffusion-Limited Growth of Graphene by Chemical Vapor Deposition

Seki

Saiki

2022

Crystal Growth & Design

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Operando Characterization and Molecular Simulations Reveal the Growth Kinetics of Graphene on Liquid Copper During Chemical Vapor Deposition

Rein,

Gao,

Heenen

et al. 2024

ACS Nano

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In recent years, liquid metal catalysts have emerged as a compelling choice for the controllable, largescale, and high-quality synthesis of two-dimensional materials. At present, there is little mechanistic understanding of the intricate catalytic process, though, of its governing factors or what renders it superior to growth at the corresponding solid catalysts. Here, we report on a combined experimental and computational study of the kinetics of graphene growth during chemical vapor deposition on a liquid copper catalyst. By monitoring the growing graphene flakes in real time using in situ radiation-mode optical microscopy, we explore the growth morphology and kinetics over a wide range of CH 4 -to-H 2 pressure ratios and deposition temperatures. Constant growth rates of the flakes' radius indicate a growth mode limited by precursor attachment, whereas methane-flux-dependent flake shapes point to limited precursor availability. Large-scale free energy simulations enabled by an efficient machine-learning moment tensor potential trained to density functional theory data provide quantitative barriers for key atomic-scale growth processes. The wealth of experimental and theoretical data can be consistently combined into a microkinetic model that reveals mixed growth kinetics that, in contrast to the situation at solid Cu, is partly controlled by precursor attachment alongside precursor availability. Key mechanistic aspects that directly point toward the improved graphene quality are a largely suppressed carbon dimer attachment due to the facile incorporation of this precursor species into the liquid surface and a low-barrier ring-opening process that self-heals 5-membered rings resulting from remaining dimer attachments.

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Photoluminescence decay of mobile carriers influenced by imperfect quenching at particle surfaces with subdiffusive spread

Katoh,

Seki

2024

The Journal of Chemical Physics

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We recently presented a quantitative model to explain the particle-size dependence of photoluminescence (PL) quantum yields and revealed that exciton quenching is not diffusion controlled, but limited by surface reactions. However, the exciton decay kinetics has not been analyzed yet using our theoretical model. Here, we study kinetic aspects of the model and show that it should be extended to take into account subdiffusion rather than normal diffusion to maintain consistency with the observed complex decay kinetics; we also show that the PL decay kinetics is nonexponential even when the PL quenching is limited by surface reactions under subdiffusion. Our theoretical analysis of the PL quantum yield and the PL decay kinetics provides a comprehensive picture of mobile charge carriers, immobile polarons, and self-trapped excitons.

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On the definition of the domain growth-rate constant on a two-dimensional substrate

Cited by 3 publications

References 25 publications

Transition from Reaction- to Diffusion-Limited Growth of Graphene by Chemical Vapor Deposition

Transition from Reaction- to Diffusion-Limited Growth of Graphene by Chemical Vapor Deposition

Operando Characterization and Molecular Simulations Reveal the Growth Kinetics of Graphene on Liquid Copper During Chemical Vapor Deposition

Photoluminescence decay of mobile carriers influenced by imperfect quenching at particle surfaces with subdiffusive spread

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