On the density of localized states obtainable from transient photodecay measurements

Seynhaeve, G.; Adriaenssens, Guy; Michiel, H.

doi:10.1016/0038-1098(85)90394-1

Cited by 24 publications

(7 citation statements)

References 15 publications

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“…This fact suggests that in this case the defect density protrudes more above the exponential background density. In such case, the characterizing t* position of the dip shifts to earlier times [19]. That the D -level would appear more prominent in the DOS of the 0.5% As-doped samples further agrees with the observed slow current decay according to ∼t −0.3 .…”

Section: Analysis and Discussionsupporting

confidence: 75%

Effect of As alloying on the valence band tail states in a‐Se

Benkhedir

Djefaflia

Mansour

et al. 2010

Phys. Status Solidi (c)

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Transient photocurrent (TPC) measurements have been carried out on evaporated a‐Se doped with either 0.2% or 0.5% of As and compared with analogous measurements on undoped and Cl doped a‐Se. These measurements show that As doping of a‐Se suppresses the shallow defects linked to the dihedral angle variations in a‐Se chains, and makes the valence band tail states distribution steeper. These changes in the a‐Se density of states increase the relative importance of the deep defect levels in As‐doped a‐Se and thus explain the widely reported hole lifetime shortening with As addition. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Analysis and Discussionsupporting

confidence: 75%

Effect of As alloying on the valence band tail states in a‐Se

Benkhedir

Djefaflia

Mansour

et al. 2010

Phys. Status Solidi (c)

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“…Best known are the power-law TPC curves in a-As 2 Se 3 , linked by Orenstein and Kastner [9] to an exponential distribution of tail states, and the cusps caused by the presence of a discrete trap superimposed on the exponential tail in the simulations of Marshall and Street [10] or Seynhaeve et al [11]. Both types of behavior have been observed and found support in calculations and simulations on the basis of the multiple-trapping transport model.…”

Section: Transient Photocurrentsmentioning

confidence: 86%

Phase Transformations in Bulk (Ge2Se7)88Bi5Sb7

Adriaenssens

2006

MRS Proc.

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Annealing at 150 °C induces phase separation in amorphous (Ge 2 Se 7 ) 88 Bi 5 Sb 7 bulk samples. Spectrally resolved steady-state photoconductivity measurements indicate the presence of crystalline Bi 2 Se 3 clusters in the annealed material, but also the subsequent gradual disappearance of this microstructure at room temperature. Similar annealing-induced metastable changes are observed in other elements of a (Ge 2 Se 7 ) 88 Bi x Sb 12-x sample series.

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“…Methods based on the Laplace transforms of the differential equations have been used by Senhaeve et al [20], Adriaenssens and Seynhaeve [21], and Nebel and Bauer [22]. In these methods, the Laplace transform is used to convert the differential equations 1, 2, 5, and 6 into algebraic equations.…”

Section: Methodsmentioning

confidence: 98%

Review of the Simulation of Transient Experiments on Amorphous Silicon Hydride

Shapiro

1992

MRS Proc.

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The transient characteristics of amorphous silicon hydride (a-Si:H) devices are of great importance as a means of studying the fundamental electrical and photoelectrical processes in the material. To assist in the interpretation of these experiments, several groups have performed simulations to understand better the meaning of transient waveforms. Simulations begin with hypotheses of how the processes of interest affect each other and affect the measured quantity, and then calculate an expected experimental result. Transient experiments on a-Si:H have been simulated by a variety of techniques, including the Monte Carlo, Laplace transform, and time integration methods. Of these methods, time integration is the most powerful but also the most demanding on computer capabilities. Fortunately, recent advances in computer technology have brought the simulation of transient experiments on a-Si:H by time integration within the capabilities of advanced personal computers.

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On the density of localized states obtainable from transient photodecay measurements

Cited by 24 publications

References 15 publications

Effect of As alloying on the valence band tail states in a‐Se

Effect of As alloying on the valence band tail states in a‐Se

Phase Transformations in Bulk (Ge2Se7)88Bi5Sb7

Review of the Simulation of Transient Experiments on Amorphous Silicon Hydride

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