On the design of random metasurface based devices

Dupré, Matthieu; Hsu, Li-Yi; Kanté, Boubacar

doi:10.1038/s41598-018-25488-4

Cited by 32 publications

(24 citation statements)

References 65 publications

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“…The random metasurface presented in Fig. 1(a) is generated numerically using a method previously proposed [15]. For a chosen position on the random metasurface, the geometry of the particle giving the required phase ( Fig.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

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Efficient design of random metasurfaces

2018

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Random media introduce large degrees of freedom in device design and can thus address challenges in manipulating optical waves. Wave shaping with metasurfaces has mainly utilized periodic or quasi-periodic grids, and, the potential of random arrangement of particles for devices has only come under investigation recently. The main difficulty in pursuing random metasurfaces is the identification of the degrees of freedom that optimize their efficiencies and functions. They can also encode information using the statistics of particles distribution. We propose a phase-map that accounts for the statistical nature of random media.The method takes into account effects of random near-field couplings that introduce phase errors by affecting the phase shift of elements. The proposed approach increases the efficiency of our random metasurface devices by up to ~20%. This work paves the way towards the efficient design of random metasurfaces with potential applications in highly secure optical cryptography and information encoding.

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Section: Simulation Results and Discussionmentioning

confidence: 99%

“…Using the proposed random phase-map, Fig. 4 shows that the average focusing efficiency of the random metalens increases by ~20% compared to the random metalens implemented using the periodic phase-map [15]. The presented results are obtained by averaging over fifteen realizations of randomness.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Efficient design of random metasurfaces

2018

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“…[ 25 ] In fact, only little work has been done using approaches similar to ours. Commonly, these works either relied on supercells or monolayers of randomly arranged particles, [ 53–56 ] since such large‐scale simulations were previously not possible.…”

Section: The Homogeneous Regime: Bulk Optical Mediamentioning

confidence: 99%

Modeling Optical Materials at the Single Scatterer Level: The Transition from Homogeneous to Heterogeneous Materials

Werdehausen

Santiago

Burger

et al. 2020

Advcd Theory and Sims

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Materials that contain distinct scatterers, for example, nanoparticles, with sizes exceeding 100 nm scatter light heavily and are heterogeneous. In contrast, the atomic or molecular scatterers in conventional optical materials form a homogeneous distribution on the scale of the wavelength. In this paper, the transition between homogeneous and heterogeneous materials is investigated. To this end, a procedure is introduced that allows for retrieving reliable refractive index values from full wave optical numerical simulations of the underlying multibody scattering problem. Using this procedure, it is shown that the concept of an effective refractive index breaks down on multiple levels as a material transitions out of the homogeneous regime. These findings allow for quantifying how novel dispersion‐engineered nanocomposites for bulk optical applications must be designed and show that Maxwell–Garnett‐type effective medium theories are accurate tools for the design of nanocomposites. The procedure can be readily generalized to other types of scatterers, including atoms and molecules and hence guide the design of different kinds of novel materials.

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“…The surfaces coated with such particles exhibit strong antireflection properties in a wide spectral range 16 . This initiates the study of light scattering by quasi-random surface structures which can also be formed by other methods 17 – 20 .…”

Section: Introductionmentioning

confidence: 99%

Dewetting behavior of Ge layers on SiO2 under annealing

Shklyaev

Латышев

2020

Sci Rep

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the solid-state dewetting phenomenon in Ge layers on Sio 2 is investigated as a function of layer thickness d Ge (from 10 to 86 nm) and annealing temperature. The dewetting is initiated at about 580-700 °C, depending on d Ge , through the appearance of surface undulation leading to the particle formation and the rupture of Ge layers by narrow channels or rounded holes in the layers with the thicknesses of 10-60 and 86 nm, respectively. The channel widths are significantly narrower than the distance between the particles that causes the formation of thinned Ge layer areas between particles at the middle dewetting stage. the thinned areas are then agglomerated into particles of smaller sizes, leading to the bimodal distributions of the Ge particles which are different in shape and size. The existence of a maximum in the particle pair correlation functions, along with the quadratic dependence of the corresponding particle spacing on d Ge , may indicate the spinodal mechanism of the dewetting in the case of relatively thin Ge layers. Despite the fact that the particle shape, during the solid-state dewetting, is not thermodynamically equilibrium, the use of the Young's equation and contact angles allows us to estimate the particle/substrate interface energy.

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On the design of random metasurface based devices

Cited by 32 publications

References 65 publications

Efficient design of random metasurfaces

Efficient design of random metasurfaces

Modeling Optical Materials at the Single Scatterer Level: The Transition from Homogeneous to Heterogeneous Materials

Dewetting behavior of Ge layers on SiO2 under annealing

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