On the Detection Limit of the Lateral Bipolar Magnetotransistors

Abstract

This paperwork presents the structure and the operating conditions of a microsensor realized in the MOS integrated circuits technology based on a bipolar lateral magnetotransistor, where the current deflection effect is dominant. There are established the main noise characteristics of the device and the way of choosing its geometry and material features, which allow the obtaining of high values of signal-tonoise ratio and a high magnetic induction resolution.