On the determination of the interface density of states in aSi:H/aSi1−XCX:H multilayers

Bertomeu, J.; Puigdollers, J.; Asensi, J.M.; Andreu, J.

doi:10.1016/0022-3093(93)91133-n

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1997

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“…The growth of a-Si:H layers on top them partially fills these growing microvoids, giving nonabrupt interfaces, but also a low density of dangling bonds [12] and a higher density of the 1-xx a -Si C :H layers as a result.…”

Section: Resultsmentioning

confidence: 99%

Infrared characterization of interfaces

Bertomeu

Puigdollers

Asensi

et al. 1997

Applied Surface Science

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1-xxInfrared spectroscopy was used to characterize three series of a-Si:H/a-Si C :H multilayers in which their geometrical parameters were varied. The infrared active vibrational groups in their spectra and the interference fringes in their absorption-free zone were studied to analyze the interfaces and the changes that are produced in very thin layers. Our results show that hydrogen is bonded to silicon only in monohydride groups. No additional hydrogen could be 1-xx detected at these interfaces. The deposition of very thin a-Si C :H layers seems to affect their porous structure, making them denser.2

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Section: Resultsmentioning

confidence: 99%