On the Development of Label-Free DNA Sensor Using Silicon Nanonet Field-Effect Transistors

Nguyen, Thị Thu Hien; Legallais, Maxime; Morisot, Fanny; Cazimajou, Thibauld; Mouis, M.; Salem, B.; Stambouli, Valérie; Ternon, C.

doi:10.3390/proceedings1040312

Cited by 5 publications

(13 citation statements)

References 8 publications

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“…The fabrication of Si NN–FETs has already been reported by our group [ 13 , 14 , 25 , 26 ]. The process begins with the formation of a randomly oriented network from a suspension of Si nanowires elaborated by chemical vapor deposition (CVD) using a vapor–liquid–solid (VLS) mechanism [ 12 ].…”

Section: Methodsmentioning

confidence: 99%

Optimization of GOPS-Based Functionalization Process and Impact of Aptamer Grafting on the Si Nanonet FET Electrical Properties as First Steps towards Thrombin Electrical Detection

et al. 2020

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Field effect transistors (FETs) based on networks of randomly oriented Si nanowires (Si nanonets or Si NNs) were biomodified using Thrombin Binding Aptamer (TBA–15) probe with the final objective to sense thrombin by electrical detection. In this work, the impact of the biomodification on the electrical properties of the Si NN–FETs was studied. First, the results that were obtained for the optimization of the (3-Glycidyloxypropyl)trimethoxysilane (GOPS)-based biofunctionalization process by using UV radiation are reported. The biofunctionalized devices were analyzed by atomic force microscopy (AFM) and scanning transmission electron microscopy (STEM), proving that TBA–15 probes were properly grafted on the surface of the devices, and by means of epifluorescence microscopy it was possible to demonstrate that the UV-assisted GOPS-based functionalization notably improves the homogeneity of the surface DNA distribution. Later, the electrical characteristics of 80 devices were analyzed before and after the biofunctionalization process, indicating that the results are highly dependent on the experimental protocol. We found that the TBA–15 hybridization capacity with its complementary strand is time dependent and that the transfer characteristics of the Si NN–FETs obtained after the TBA–15 probe grafting are also time dependent. These results help to elucidate and define the experimental precautions that must be taken into account to fabricate reproducible devices.

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Section: Methodsmentioning

confidence: 99%

Optimization of GOPS-Based Functionalization Process and Impact of Aptamer Grafting on the Si Nanonet FET Electrical Properties as First Steps towards Thrombin Electrical Detection

et al. 2020

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“…Silicon ribbon (SiRi) field-effect-transistors (FETs) have been widely recognized as efficient standalone prostate specific antigen (PSA) cancer marker, DNA, virus and pH sensors [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 ]. The small size, high surface to volume ratio, electrical read-out and a dimension that is comparable to the target of interest make SiRi-FETs an excellent contender for label-free pH and bio detection [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 ]. Table 1 summarizes some of the most important works employing SiRi sensor for the detection of pH or bio targets.…”

Section: Introductionmentioning

confidence: 99%

“…In particular, the SiRi-FETs described in this work can be functionalized using the process shown by Nguyen et al [ 5 ] and Jayakumar et al [ 11 ]. The first step in the DNA probe covalent grafting process is silanization.…”

Section: Introductionmentioning

confidence: 99%

“…The first step in the DNA probe covalent grafting process is silanization. In this step, the sensor surface is functionalized with single strand DNA using an organosilane such as (3-Aminopropyl)triethoxysilane (APTES) [ 5 ]. Later, the sensor can be used for the hybridization detection of target DNA that is complementary to the probe DNA [ 11 ].…”

Section: Introductionmentioning

confidence: 99%

“…In the BU method, the SiRi sensors are realized by using molecular pre-cursors. For example a silicon nanonet field effect transistor (SiNN-FET) can be manufactured on a bulk Si wafer using the BU method [ 5 , 18 ]. On the contrary, in the TD method, SiRi sensors are commonly realized on a silicon-on-insulator (SOI) substrate using the well-established lithography and patterning techniques [ 2 , 3 , 4 , 6 , 7 , 8 , 9 , 19 ].…”

Section: Introductionmentioning

confidence: 99%

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Monolithic Wafer Scale Integration of Silicon Nanoribbon Sensors with CMOS for Lab-on-Chip Application

2018

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Silicon ribbons (SiRi) have been well-established as highly sensitive transducers for biosensing applications thanks to their high surface to volume ratio. However, selective and multiplexed detection of biomarkers remains a challenge. Further, very few attempts have been made to integrate SiRi with complementary-metal-oxide-semiconductor (CMOS) circuits to form a complete lab-on-chip (LOC). Integration of SiRi with CMOS will facilitate real time detection of the output signal and provide a compact small sized LOC. Here, we propose a novel pixel based SiRi device monolithically integrated with CMOS field-effect-transistors (FET) for real-time selective multiplexed detection. The SiRi pixels are fabricated on a silicon-on-insulator wafer using a top-down method. Each pixel houses a control FET, fluid-gate (FG) and SiRi sensor. The pixel is controlled by simultaneously applying frontgate (VG) and backgate voltage (VBG). The liquid potential can be monitored using the FG. We report the transfer characteristics (ID-VG) of N- and P-type SiRi pixels. Further, the ID-VG characteristics of the SiRis are studied at different VBG. The application of VBG to turn ON the SiRi modulates the subthreshold slope (SS) and threshold voltage (VTH) of the control FET. Particularly, N-type pixels cannot be turned OFF due to the control NFET operating in the strong inversion regime. This is due to large VBG (≥25 V) application to turn ON the SiRi sensor. Conversely, the P-type SiRi sensors do not require large VBG to switch ON. Thus, P-type pixels exhibit excellent ION/IOFF ≥ 106, SS of 70–80 mV/dec and VTH of 0.5 V. These promising results will empower the large-scale cost-efficient production of SiRi based LOC sensors.

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Pixel-based biosensor for enhanced control: silicon nanowires monolithically integrated with field-effect transistors in fully depleted silicon on insulator technology

Jayakumar

Östling

2019

Nanotechnology

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Silicon nanowires (SiNWs) are a widely used technology for sensing applications. Complementary metal-oxide-semiconductor (CMOS) integration of SiNWs advances lab-on-chip (LOC) technology and offers opportunities for read-out circuit integration, selective and multiplexed detection. In this work, we propose novel scalable pixel-based biosensors exploiting the integration of SiNWs with CMOS in fully-depleted silicon-on-insulator technology. A detailed description of the wafer-scale fabrication of SiNW pixels using the CMOS compatible sidewall-transfer-lithography as an alternative to widely investigated time inefficient e-beam lithography is presented. Each 60 nm wide SiNWs sensor is monolithically connected to a control transistor and novel on-chip fluid-gate forming an individual pixel that can be operated in two modes: biasing transistor frontgate (VG) or substrate backgate (VBG). We also present the first electrical results of single N and P-type SiNW pixels. In frontgate mode, N and P-type SiNW pixels exhibit subthreshold slope (SS) ≈ 70–80 mV/dec and Ion/Ioff ≈ 105. The N-type and P-type pixels have an average threshold voltage, Vth of −1.7 V and 0.85 V respectively. In the backgate mode, N and P-type SiNW pixels exhibit SS ≈ 100–150 mV/dec and Ion/Ioff ≈ 106. The N and P-type pixels have an average Vth of 5 V and −2.5 V respectively. Further, the influence of the backgate and frontgate voltage on the switching characteristics of the SiNW pixels is also studied. In the frontgate mode, the Vth of the SiNW pixels can be tuned at 0.2 V for 1 V change in VBG for N-type or at −0.2 V for −1 V change in VBG for P-type pixels. In the backgate mode, it is found that for stable operation of the pixels, the VG of the N and P-type transistors must be in the range 0.5–2.5 V and 0 V to −2.5 V respectively.

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On the Development of Label-Free DNA Sensor Using Silicon Nanonet Field-Effect Transistors

Cited by 5 publications

References 8 publications

Optimization of GOPS-Based Functionalization Process and Impact of Aptamer Grafting on the Si Nanonet FET Electrical Properties as First Steps towards Thrombin Electrical Detection

Optimization of GOPS-Based Functionalization Process and Impact of Aptamer Grafting on the Si Nanonet FET Electrical Properties as First Steps towards Thrombin Electrical Detection

Monolithic Wafer Scale Integration of Silicon Nanoribbon Sensors with CMOS for Lab-on-Chip Application

Pixel-based biosensor for enhanced control: silicon nanowires monolithically integrated with field-effect transistors in fully depleted silicon on insulator technology

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