On the difference in damage distributions of N⁺single ion and N⁺₂molecular ion irradiation of silicon at high doses

Tomographic study on high-fluence impact of nitrogen into silicon

“…Thus it has been found recently [12] that some of the defect clusters created by 1.4 MeV N + 2 ions in Si are situated in or near the centre of [100] channels, but outside the [111] channels-rather aligned along the [111] rows.…”

“…In this calculation it was assumed for simplicity that ion-induced defects consist of clusters of randomly distributed Si atoms within the crystal, thus neglecting more organized defects and, in particular, also distortion centres and stacking faults. If, for contrast, the defect clusters were assumed to be aligned structures along a given crystal axis (as was in fact observed in [12]), one would expect different dechannelling cross sections and hence different resulting damage distributions. This could eventually even lead to inconsistent-as no longer normalized to each other-input distributions for the tomographic reconstruction which hence were rendered impossible.…”