2018
DOI: 10.1007/s13222-018-0287-8
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On the Diversity of Memory and Storage Technologies

Abstract: The last decade has seen tremendous developments in memory and storage technologies, starting with Flash Memory and continuing with the upcoming Storage-Class Memories. Combined with an explosion of data processing, data analytics, and machine learning, this led to a segmentation of the memory and storage market. Consequently, the traditional storage hierarchy, as we know it today, might be replaced by a multitude of storage hierarchies, with potentially different depths, each tailored for specific workloads. … Show more

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Cited by 7 publications
(4 citation statements)
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“…While our work proposes low-level optimizations, Swanson et al evaluate PMem with various storage engines as well as file systems. Until now, software or hardware-based simulations, or emulations based on speculative performance characteristics, have been used to evaluate possible system architectures [4,25,27,29]. The number of persistent index structures [3,9,14,21,34,37] is large, and has been summarized by Götze et.…”
Section: Related Workmentioning
confidence: 99%
“…While our work proposes low-level optimizations, Swanson et al evaluate PMem with various storage engines as well as file systems. Until now, software or hardware-based simulations, or emulations based on speculative performance characteristics, have been used to evaluate possible system architectures [4,25,27,29]. The number of persistent index structures [3,9,14,21,34,37] is large, and has been summarized by Götze et.…”
Section: Related Workmentioning
confidence: 99%
“…[ 38 ] From an industrial viewpoint, the phase‐change material has the potential to become a next‐generation nonvolatile device; therefore, Intel and Micron Technology have developed a phase‐change‐material‐based 3D X‐point nonvolatile memory architecture. [ 39 ] There is a structural difference between the magnetic and ferroelectric RS devices and the aforementioned RS memory devices. For instance, spin‐transfer torque‐based memory devices utilize a magnetic tunnel junction comprising a tunnel barrier sandwiched between ferromagnetic layers in addition to the transistor as a selector element.…”
Section: Brief Overview Of the Rs Devicesmentioning
confidence: 99%
“…While our work proposes low-level optimizations, Swanson et al evaluate PMem with various storage engines as well as file systems. Until now, software or hardware-based simulations, or emulations based on speculative performance characteristics, have been used to evaluate possible system architectures [3,36,38,40]. The number of persistent index structures [2,9,15,[27][28][29]48,52,53] is large, and has been summarized by Götze et.…”
Section: Related Workmentioning
confidence: 99%