2014
DOI: 10.1007/s10404-014-1467-y
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On the droplet velocity and electrode lifetime of digital microfluidics: voltage actuation techniques and comparison

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Cited by 36 publications
(14 citation statements)
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“…However, if the flow rate decreases, droplets reside for a longer period within the main channel, which can be disadvantageous for fast sorting procedures (Figure S6, Supporting Information). It is possible to increase the applied potential (>126 V RMS ) to the electrodes (to increase the electrostatic force and work under higher flow rates), but this may induce dielectric breakdown, [ 77–79 ] followed by electrolysis or Joule heating which can ultimately lead to cell stress and to changes in genomic regulation in cells. [ 80 ] Hence, for gene‐editing experiments discussed below, we used flow rates below 45 nL s −1 to keep the droplets inside the trap while maintaining applied potentials below 126 V RMS .…”
Section: Resultsmentioning
confidence: 99%
“…However, if the flow rate decreases, droplets reside for a longer period within the main channel, which can be disadvantageous for fast sorting procedures (Figure S6, Supporting Information). It is possible to increase the applied potential (>126 V RMS ) to the electrodes (to increase the electrostatic force and work under higher flow rates), but this may induce dielectric breakdown, [ 77–79 ] followed by electrolysis or Joule heating which can ultimately lead to cell stress and to changes in genomic regulation in cells. [ 80 ] Hence, for gene‐editing experiments discussed below, we used flow rates below 45 nL s −1 to keep the droplets inside the trap while maintaining applied potentials below 126 V RMS .…”
Section: Resultsmentioning
confidence: 99%
“…The setup of the Digital Microuidic system was the same as previously described. [21][22][23] Briey, as shown in Fig. 2, there were four parts in the system: a DMF chip, an electronic control panel, a eld-programmable gate array (FPGA) board and a soware control program.…”
Section: Methodsmentioning
confidence: 99%
“…† control, followed by multi-layer dielectric materials to enhance the EWOD force, thus reducing the threshold driving voltage. 34 This driving signal on the NMR sensing site is switched off during the NMR experiment to prevent interference on the sensitive NMR receiver. The specified sheet resistance of the ITO is 100 Ω sq −1 .…”
Section: Dmf Device and Electronicmentioning
confidence: 99%
“…S9 in the ESI †). 34 This driving signal on the NMR sensing site is switched off during the NMR experiment to prevent interference on the sensitive NMR receiver. To further enhance the portability of the system, an electronic boost converter is used to generate the square wave so as to circumvent the use of an extra high voltage supply.…”
Section: Dmf Device and Electronicmentioning
confidence: 99%