On the effect of heating and cooling rates on the melting and crystallization of metal nanoclusters

Samsonov, V. M.; Talyzin, I. V.; Samsonov, M. V.

doi:10.1134/s1063784216060207

Cited by 10 publications

(3 citation statements)

References 9 publications

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“…рис. 1), аналогичная по виду петле гистерезиса плавлениякристаллизации для металлических наночастиц [12][13][14]. Соответственно, температура завершения плавления (точка А на рис.…”

Section: молекулярно-динамический подход к построению фазовой диаграмunclassified

ON PHASE DIAGRAM OF Au - Si NANOALLOY: MOLECULAR DYNAMICS AND THERMODYNAMIC SIMULATION

Talyzin¹,

Kartoshkin²,

Vasilyev³

et al. 2019

pcascnn

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Рецензирование статей осуществляется на основании Положения о рецензировании статей и материалов для опубликования в Межвузовском сборнике научных трудов «Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов». Официальный сайт издания в сети Интернет: https://www.physchemaspects.ru Ф50 Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов [Текст].  Тверь: Твер. гос. ун-т, 2019.  Вып. 11.  680 с. Зарегистрирован Федеральной службой по надзору в сфере связи, информационных технологий и массовых коммуникаций, свидетельство о регистрации СМИ ПИ № ФС 7747789 от 13.12.2011. Издание составлено из оригинальных статей, кратких сообщений и обзоров теоретического и экспериментального характера, отражающих результаты исследований в области изучения физико-химических процессов с участием кластеров, наноструктур и наноматериалов физики, включая межфазные явления и нанотермодинамику. Сборник предназначен для научных и инженерно-технических работников, преподавателей ВУЗов, студентов и аспирантов. Издание подготовлено на кафедре общей физики Тверского государственного университета. Переводное название: Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials Транслитерация названия: Fiziko-himičeskie aspekty izučeniâ klasterov, nanostruktur i nanomaterialov

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Section: молекулярно-динамический подход к построению фазовой диаграмunclassified

ON PHASE DIAGRAM OF Au - Si NANOALLOY: MOLECULAR DYNAMICS AND THERMODYNAMIC SIMULATION

Talyzin¹,

Kartoshkin²,

Vasilyev³

et al. 2019

pcascnn

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“…Under certain heating conditions the particle melting point was preceded by particle crystallization in a certain temperature range. As in earlier works [26][27][28] we determined the melting point by a discontinuity in the temperature function of potential (cohesive) component of specific internal energy (per atom) (Fig. 1).…”

Section: Molecular Dynamics Simulation Of Melting and Crystallization...mentioning

confidence: 99%

Outlooks for development of silicon nanoparticle memory cells

Talyzin¹,

Samsonov²

2019

MoEM

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Phase change memory is based on changes in the optical, electrical or other properties of materials during phase transitions, e.g. an amorphous to crystalline transition. Currently existing and potential applications of this memory are primarily based on multicomponent alloys of metals and semiconductors. However single-component nanoparticles including Si ones are also of interest as promising nanosized memory cells. The potential for developing this type of memory cells is confirmed by the fact that the optical absorption index of bulk amorphous silicon is of the same order of magnitude as that of crystalline silicon. Certainly this phenomenon can hardly be implemented with a single nanoparticle the size of which is within light wavelength. Using molecular dynamics and the Stillinger-Weber potential we have studied the regularities of melting and the conditions of crystallization of silicon nanoparticles containing within 105 atoms. We have shown that cooling of nanosized silicon drops at a 0.2 TK/s rate or higher rates causes their amorphous transition whereas single-component nanosized metallic drops crystallize in molecular dynamics experiments even at a 1 TK/s rate. Further heating of amorphous silicon nanoparticles containing above 5 ∙ 104 atoms causes their crystallization in a specific temperature range from 1300 to 1400 K. We have concluded that there is a possibility of developing phase change memory cells on the basis of the above phase transitions. An amorphous transition of a nanoparticle can be achieved by its melting and further cooling to room temperature at a 0.2 TK/s rate whereas a crystalline transition, by its heating to 1300–1400 K at a 0.2 TK/s rate followed by cooling. Results of molecular dynamics experiments suggest there is a minimum silicon nanoparticle size for which the development of phase change memory cells becomes theoretically impossible at a given temperature change rate. For a 0.2 TK/s temperature change rate this minimum size is 12.4 nm (number of atoms approx. 5 ∙ 104).

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“…Nickel clusters are easily formed both during diffusion and during further heat treatment, but they practically do not affect the electrical parameters of the material due to the low (N ∼ 4 • 10 14 cm −3 ) concentration of electroactive nickel. The concentration, size and composition of clusters are mainly determined by the temperature of additional annealing and the total concentration of nickel atoms introduced into silicon [6,7].…”

Section: Introductionmentioning

confidence: 99%

Gettering properties of nickel in silicon photocells

M.K.

Kenzhaev

et al. 2022

Technical Physics

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The effect of doping with nickel on the parameters of silicon photocells, in which the p-n- junction was created by impurities of III (B, Ga) and V (P, Sb) groups, has been studied. It is shown that the positive effect of nickel on the photocell efficiency does not depend on the type of initial silicon and on the nature of impurities used to obtain the p-n- junction, but is mainly determined by the gettering properties of the near-surface nickel-enriched layer Keywords: photocell, silicon, nickel, thermal annealing, clusters, lifetime, gettering, recombination centers.

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On the effect of heating and cooling rates on the melting and crystallization of metal nanoclusters

Cited by 10 publications

References 9 publications

ON PHASE DIAGRAM OF Au - Si NANOALLOY: MOLECULAR DYNAMICS AND THERMODYNAMIC SIMULATION

ON PHASE DIAGRAM OF Au - Si NANOALLOY: MOLECULAR DYNAMICS AND THERMODYNAMIC SIMULATION

Outlooks for development of silicon nanoparticle memory cells

Gettering properties of nickel in silicon photocells

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