devices. [1][2][3][4][5][6]9,10] In each of these cases, an electric field applied to the device couples either directly or indirectly to the magnetization and changes its state. This magnetoelectric coupling property can be found in single-phase multiferroic materials (those exhibiting both ferroelectricity and ferromagnetism) or multiphase material systems (combining different types of ferroic materials into composites). In this work, we develop the first thin-film magnetoelectric composite to be completely integrated in a semiconductor device process and demonstrate its performance in the form of a tunable waveguide resonator. These integrated magnetoelectric resonators extend the reach of magnetoelectrics into yet another field-that of radio-frequency (RF) wireless communication-and demonstrate tunability across several wireless channels using as little as ≈6 V µm electric field.To avoid congestion of wireless communication channels, wireless electronics must be able to be tuned broadly across multiple channels, while also maintaining small form factors for portability. Various methods have been proposed for broadband tunability, mostly involving variable capacitors or inductors in resonant circuits. [9,[12][13][14][15] However, resonators can also take other forms, such as waveguides, which can be tuned by changing either their effective capacitance [16] or effective inductance. Common drawbacks of many of these previous methods are their incompatibility with semiconductor circuit integration, bulk size, or limited tunability range. In this work, we explore the design and integration of thin-film magnetoelectrics for tunable coplanar waveguide resonators. These devices aim to satisfy semiconductor integration requirements while simultaneously providing large tunability by means of electrical control of magnetization.We designed the tunable resonator device shown in Figure 1 as an RF quarter-wavelength resonator, whose resonance is based on the effective permeability and permittivity of the material stack. For tunability of the resonance frequency, we utilize a two-phase magnetoelectric composite in which the magnetic permeability can be varied through electric field control of strain. A coplanar waveguide on the surface of the structure carries the wave such that its propagation is influenced by the underlying magnetoelectric stack. The magnetoelectric is composed of a magnetostrictive ferromagnetic layer on top of a piezoelectric/electrodes combined layer, with the silicon Magnetoelectrics have attracted much attention for their ability to control magnetic behavior electrically and electrical behavior magnetically. This feature provides numerous benefits to electronic systems and can potentially serve as the bridge needed to integrate magnetic devices into mainstream electronics. Here, this natural next step is pursued and thin-film integrated magnetoelectric devices are produced for radio-frequency (RF) electronics. The first fully integrated, thin-film magnetoelectric modulators for tunable RF electronics...