On the Electric and Photoelectric Properties of Contacts between a Metal and a Semiconductor

Frenkel, Jacob A.; Joffe, A F

doi:10.1103/physrev.39.530

Cited by 15 publications

(8 citation statements)

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“…Metal/semiconductor interfaces have been widely investigated for the better part of a century. , Largely studied for their interesting electronic behavior, metals on semiconductors have more recently moved into the arena of semiconductor epitaxy. , In this context, metals modify nucleation and growth phenomena at the nanoscale. For example, metal overlayers have been exploited to tune the characteristics of epitaxial islands, or quantum dots (QDs), including their size, density, and to a limited extent, shape. , Additionally, metal films have been instrumental in catalyzing the growth of semiconductor nanowires and nanotubes. , …”

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confidence: 99%

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Gold-Catalyzed Oxide Nanopatterns for the Directed Assembly of Ge Island Arrays on Si

et al. 2007

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The heteroepitaxial growth of Ge on Au-patterned Si(001) is investigated using in situ spectromicroscopy. Patterning of a hydrogen-terminated Si surface with a square array of Au dots followed by brief exposure to air leads to the spontaneous, local oxidation of Si. The resulting oxide nanopattern limits the surface migration of Au during annealing up to 600 degrees C, resulting in complete preservation of the Au pattern. Subsequent deposition of Ge induces a redistribution of Au across the surface even as the oxide nanopattern persists. As a result, the oxide pattern drives the growth of Ge islands into an ordered assembly, while Au decorates the surfaces of the Ge islands and modifies their shape.

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confidence: 99%

“…Metal/semiconductor interfaces have been widely investigated for the better part of a century. 1,2 Largely studied for their interesting electronic behavior, metals on semiconductors have more recently moved into the arena of semiconductor epitaxy. 3,4 In this context, metals modify nucleation and growth phenomena at the nanoscale.…”

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confidence: 99%

Gold-Catalyzed Oxide Nanopatterns for the Directed Assembly of Ge Island Arrays on Si

et al. 2007

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“…Here we present a simple approach that leverages the Wilson-Frenkel law (Wilson, 1900;Frenkel & Joffe, 1932) for ice growth -equivalent to the Gibbs-Thomson equation neglecting curvature; see Eq. ( 14).…”

Section: Upscaling Of the Phase-change Termmentioning

confidence: 99%

A thermodynamic nonequilibrium model for preferential infiltration and refreezing of melt in snow

Moure

Jones

Pawlak

et al. 2022

Preprint

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The transport of meltwater through porous snow is a fundamental process in hydrology that remains poorly understood but essential for more robust prediction of how the cryosphere will respond under climate change. Here we propose a continuum model that resolves the nonlinear coupling of preferential melt flow and the nonequilibrium thermodynamics of ice-melt phase change at the Darcy scale. We assume that the commonly observed unstable melt infiltration is due to the gravity fingering instabililty, and capture it using the modified Richards equation that is extended with a higher-order term in saturation. Our model accounts for changes in porosity and the thermal budget of the snowpack caused by melt refreezing at the continuum scale, based on a mechanistic estimate of the ice-water phase change kinetics formulated at the pore scale. We validate the model in 1D against field data and laboratory experiments of infiltration in snow and find generally good agreement. Compared to existing theory of stable melt infiltration, our 2D simulation results show that preferential infiltration delivers melt faster to deeper depths, and as a result, changes in porosity and temperature can occur at deeper parts of the snow. The simulations also capture the formation of vertical low porosity annulus known as ice pipes, which have been observed in the field but lack mechanistic understanding to date. Our results demonstrate how melt refreezing and unstable infiltration reshape the porosity structure of snow and impacts thermal and mass transport in highly nonlinear ways, which are not captured by simpler models.

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“…Systematic investigation on SHs was launched in 1932 by Zhuze and Kurchatov. [ 17,18 ] The current rectification, [ 19 ] exciton phenomenon, [ 20,21 ] carrier diffusion of SHs were first studied. [ 22 ] One of the most significant early achievements was the finding that SHs could possess extremely high carrier injection efficiency in comparison with semiconductor homojunctions.…”

Section: Introductionmentioning

confidence: 99%

Recent Progress on the Scanning Tunneling Microscopy and Spectroscopy Study of Semiconductor Heterojunctions

Wei

Wang

Lü

et al. 2021

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The band alignment, interface states, interface coupling, and carrier transport of semiconductor heterojunctions (SHs) need to be well understood for the design and fabrication of various important semiconductor structures and devices. Scanning tunneling microscopy (STM) with high spatial resolution and scanning tunneling spectroscopy (STS) with high energy resolution are significantly contributing to the understanding on the important properties of SHs. In this work, the recent progress on the use of STM and STS to study lateral, vertical and bulk SHs is reviewed. The spatial structures of SHs with atomically flat surface have been examined with STM. The electronic band structures (e. g., the band offset, interface state, and space charge region) of SHs are measured with STS. Combined with the spatial structures and the tunneling spectra features, the mechanism for the carrier transport in the SH may be proposed.

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On the Electric and Photoelectric Properties of Contacts between a Metal and a Semiconductor

Cited by 15 publications

References 1 publication

Gold-Catalyzed Oxide Nanopatterns for the Directed Assembly of Ge Island Arrays on Si

Gold-Catalyzed Oxide Nanopatterns for the Directed Assembly of Ge Island Arrays on Si

A thermodynamic nonequilibrium model for preferential infiltration and refreezing of melt in snow

Recent Progress on the Scanning Tunneling Microscopy and Spectroscopy Study of Semiconductor Heterojunctions

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