On the electrical characteristics of Au/n-type GaAs Schottky diode

Mamor, M.; Bouziane, K.; Tirbiyine, A.; Alhamrashdi, H.

doi:10.1016/j.spmi.2014.05.012

Cited by 18 publications

(8 citation statements)

References 25 publications

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“…At present it is used for many applications such as solar cells in space, sources and detectors in optical fibres and as microwave sources [1][2][3]. The high electron mobility and high carrier saturation velocity of the material makes it ideally suited for the fabrication of high frequency and low power devices [4]. Several opto-electronic devices have been implemented on it to date.…”

Section: Introductionmentioning

confidence: 99%

“…More often these devices require metallization, therefore in order to understand their electrical characteristics we use the simple metal semiconductor (MS) structure also known as the Schottky barrier diode [4].…”

Section: Introductionmentioning

confidence: 99%

“…Several researchers have studied the electrical characteristics of Au/n-GaAs Schottky diodes and have reported a strong dependence of diode characteristics on temperature [4,7,8,[11][12][13]. Kim et al [14] studied the temperature dependence of Au/n-GaAs I-V characteristics using a semi analytical model in the 83 -323 K temperature range.…”

Section: Introductionmentioning

confidence: 99%

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The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes

Tunhuma

Auret

Legodi

et al. 2016

Physica B: Condensed Matter

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In this study, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-GaAs Schottky diodes have been measured over a wide temperature range, 80 -480 K.The diodes were rectifying throughout the range and showed good thermal stability. Room temperature values for the ideality factor, I-V barrier height and C-V barrier height were found to be n = 1.10, = 0.85 eV and = 0.96 eV, respectively. increases and n decreases with an increase in temperature. We investigated the effect of elevated temperatures on the barrier height and ideality factor by measuring the diodes at a high temperature (annealing mode) then immediately afterwards measuring at room temperature (post annealing mode). The measurements indicate I-V characteristics that degrade permanently above 300 K. Permanent changes to the C-V characteristics were observed only above 400 K. We also noted a discrepancy in the C-V barrier height and carrier concentration between 340 and 400 K, which we attribute to the influence of the EL2 defect (positioned 0.83 eV below the conduction band minima) on the free carrier density. Consequently, we were able to fit the versus temperature curve into two regions with temperature coefficients -6.9×10 -4 eV/K and -2.2×10 -4 eV/K above and below 400 K.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes

Tunhuma

Auret

Legodi

et al. 2016

Physica B: Condensed Matter

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“…The value of ideality factor and barrier height determined from the forward bias I-V characteristics for dark and 100 mW/cm 2 is given in Table 1. The obtained ideality factor value is higher than unity due to series resistance, inhomogeneities of barrier height and interface states [40][41][42][43][44][45]. In addition, the series resistance affects the linear region of forward bias I-V curves and in turn, the linear region deviates from linearity.…”

Section: Photocurrent-voltage (I-v) Characteristics Of the Diodementioning

confidence: 89%

Structural, Electrical and Photoresponse Properties of Si-based Diode with Organic Interfacial Layer Containing Novel Cyclotriphosphazene Compound

Yakuphanoğlu

Koran

Özen

et al. 2017

Silicon

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The electrical and photoresponse properties of an Al/p-Si/organic layer/Al diode were investigated. The organic layer containing novel 2,2-bis[spiro(7,8-dioxy-4-methylcoumarin)]-4,4,6,6-bis[spiro(2',2"-dioxy-1',1"biphenylyl)]cyclotriphosphazene compound was coated by the drop casting method on p-Si having ohmic contact. The structural characterization of the novel cyclotriphosphazene compound was confirmed by using 1 H, 13 C and 31 P-NMR, elemental analysis and FTIR spectroscopic techniques. The diode exhibits a photoconducting and photodiode behavior under solar light illumination. The electrical parameters such as ideality factor, barrier height and series resistance of the diode were determined from I-V characteristics. It is seen that the photocurrent of the diode under illumination is higher than the dark current. Also, the frequency dependence of capacitance (C) and conductance (G) was explained on the basis of interface states. It is evaluated that the hybrid photodiode can be used as a photosensor in organic photodetector applications.

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“…As the value of ideality factor was increase under photo-illumination condition may attributes to recombination-generation currents during light absorption, the existence of interface states between metal contact and semiconductor interface in a heterojunction device, the existence of series resistance, a broad intrinsic distribution of low-Schottky barrier height (low-SBH) or shallow patches and charge carrier tunnelling (Chitnis, et. al., 2000;Mamor, et. al., 2014;Alialy, et.…”

Section: A Diode Characteristicsmentioning

confidence: 99%

Electrical and Photo-Electrical Characteristics of a GaInNAs based p-i-n Diode with 10-undoped Quantum Wells

2020

ASMSJ

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An electrical and photo-electrical characteristics of a dilute nitride GaInNAs p-in diode with 10-undoped quantum wells (10-QWs) were investigated at room temperature. The QWs consists of 10-nm thick and separated by 10 nm GaAs barriers. The dilute nitride-based p-in diode exhibits a good rectifying behavior and discloses that the fabricated devices has a Schottky property. The current-voltage (I-V) characteristics showed the forward-biased region of I-V curves exhibited an exponential dependence of current on applied bias, whereas the reversed-biased region shows the saturation current with negative reverse current value (leakage currents) under dark condition. As the device was exposed to photo-illumination, the electrical characteristic exhibited an increase of dark-current by four orders of magnitude to that of device under dark condition. Upon photo-illumination, there was also a shift in the threshold voltage from 0.58 V to 0.73 V. Ideality factor, n and barrier height, B are main electrical parameters were extracted using conventional forward bias I-V characteristics. The values of barrier height, which were obtained were in good agreement with other reported values. The value of n was found to be 1.95 and 28.56. Ideality factor approaches 2 indicated that fully trap-assisted recombination in quantum wells. While, high ideality factor at photo-illumination indicated that the charge transport mechanism is controlled by tunnelling emission.

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On the electrical characteristics of Au/n-type GaAs Schottky diode

Cited by 18 publications

References 25 publications

The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes

The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes

Structural, Electrical and Photoresponse Properties of Si-based Diode with Organic Interfacial Layer Containing Novel Cyclotriphosphazene Compound

Electrical and Photo-Electrical Characteristics of a GaInNAs based p-i-n Diode with 10-undoped Quantum Wells

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