On the Electrodeposition of Arsenic in a Choline Chloride/Ethylene Glycol Deep Eutectic Solvent

Abstract

The electrochemical behavior of arsenic(III) is investigated in the ethaline deep eutectic solvent (DES) that is obtained by mixing 1 mol eq. of choline chloride and 2 mol eq. of ethylene glycol using As 2 O 3 as the As(III) source. Cyclic voltammetry and rotating disc voltammetry experiments indicate that the reduction of As(III) to As is a single step three electron transfer process with slow kinetics. Chronoamperometry experiments indicate that the deposition of arsenic at a glassy carbon electrode involves with an overpotential-driven three dimensional instantaneous nucleation/growth process. The calculated number density of the nuclei increases as a function of applied overpotential. Amorphous arsenic coatings are prepared using constant potential, constant current, and pulse potential electrolysis experiments. The morphology of the electrodeposits is examined by SEM.

Preparation and Characterization of Thin Arsenic Targets for Stacked-Target Experiments

“…Consequently, the predicted arsenic areal densities derived from the cadmium difference method were only slightly reduced versus the bare irradiations. Moreover, the relative subtraction in Equation ( 5) was largely insensitive on account of the significant epithermal activation and yielded similar final ratios to Equation (2). The failure of the well-established cadmium work to fully explain the 5-7× areal density overestimations pointed towards dominating missing variables elsewhere in the activation calculations causing the mass inflation.…”

“…These studies exist outside of the applied nuclear data realm but would generate an improved description of underlying arsenic electrochemistry kinetics and consequences, likely deducing optimal cell assemblies and plating parameters, and perhaps leading to an arsenic target fabrication standardization. A fundamental study of this type has been performed by Wang et al [2], where in-depth voltammetric work was used to explore arsenic electroplating charge-transfer kinetics, chronoamperometry was used to detail aspects of deposition nucleation and growth, and microstructure analysis was performed under different conditions. However, this study held a research focus within the semiconductor industry and was performed for a plating solution meeting associated needs.…”

“…Typically, in experimental cases like Fox et al [1], targets of interest meeting these requirements can be sourced from commercial facilities. However, arsenic is resistant to many common thin target fabrication techniques, as has been intensively explored in the semiconductor industry [2,3]. Arsenic sublimes on heating and cannot be casted, nor can it be subjected to cold/hot rolling due to its brittle nature and propensity for significant cracking [4][5][6].…”

Investigating the dissolution of iron sulfide and arsenide minerals in deep eutectic solvents

“…Electrodissolution was carried out under atmospheric conditions, with no attempt to exclude moisture, so (oxy)hydroxide species may also be present. Due to the oxidation potentials used during the electrodissolution process, the possibility of As V must also be considered, as despite literature sources indicating As V is not observable within the normal potential range of 1ChCl:2EG experiments, 46 it is possible that this range was exceeded during electrodissolution. X-ray absorption near edge structure (XANES) can be used to identify changes in oxidation state and structural behaviour from the position and shape of the edge, respectively.…”

A Glance of the Electrochemical Co-Deposition of Indium and Arsenic in a Choline Chloride/Ethylene Glycol Deep Eutectic Solvent

“…ethaline.-The electrodeposition of indium 41 and arsenic, 42 individually, from ethaline has been reported recently. Nevertheless, cyclic voltammograms were recorded at 353 K on a GC disc electrode in order to briefly illustrate the voltammetric behavior of In(III) and As(III), respectively, in ethaline.…”