On the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level

Boiko, V. M.; Brudnii, V. N.; Ermakov, V. S.; Kolin, N. G.; Korulin, A. V.

doi:10.1134/s1063782615060068

Cited by 1 publication

(1 citation statement)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Upon the high doses of electron irradiation, all studied samples obtained a p-type conductivity with a hole concentration at about of 5 × 10 18 cm −3 that corresponds to the Fermi level position near the valence band top (VBT), at about E V + 0.03 eV. These results close to the previous studies of the proton and neutron-irradiated GaSb samples [14,15]. At the same time in the initial heavily doped p + -GaSb:Zn (p 0 = 1.29 × 10 19 cm −3 ) samples the concentration of the holes decreases after the proton irradiation which indicates the introduction of the donor-type defects [14].…”

Section: Electrical Propertiessupporting

confidence: 88%

Fermi level pinning and hydrostatic pressure effect in electron irradiated GaSb

Brudnyi

Kаmenskaya

Brudnyi

2020

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The effect of 2 MeV electron bombardment up to total electron dose of 1 × 10 19 cm −2 on the electrical and piezo resistive properties of n-and p-type GaSb crystals was studied. The electron irradiation leads to saturation of the hole concentration at about 5 × 10 18 cm −3 as a result of Fermi level pinning near the valence band top in all irradiated samples. With this in mind, the calculated data on the energy position of the charge neutrality level in GaSb were analyzed. The pressure coefficient of resistivity α ρ = ∂(lnρ)/∂P was measured as a function of Fermi level position in the electron irradiated samples. Isochronal annealing of radiation-induced defects was investigated in the temperature range of 20-400 • C.

show abstract

Section: Electrical Propertiessupporting

confidence: 88%