On the electrostatic behavior of floating nanoconductors

Charge-Trapping Non-Volatile Memories

“…Assuming n QD ¼ 10 12 cm À2 , ν ¼ 1, ε COX ¼ 3.9 (SiO 2 ) and ε QD ¼ 11.9 (Si), are t COX ¼ 10 nm and t QD ¼ 5 nm, we obtain ΔV TH ¼ 0.5 V. Also, the equivalent capacitance model for FG-NVM is not valid anymore because the parallel plate capacitor model is not applied in the case of QD-NVM devices (Deleruyelle and Micolaub 2008). Nevertheless, one may assume that the parallel plate capacitor model is correct only locally, i.e., at the position of the QD, as shown in Fig.…”