2019
DOI: 10.1038/s41598-019-54463-w
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On the emergence of conductivity at SrTiO3-based oxide interfaces – an in-situ study

Abstract: Heterostructures and crystal interfaces play a major role in state-of-the-art semiconductor devices and play a central role in the field of oxide electronics. In oxides the link between the microscopic properties of the interfaces and bulk properties of the resulting heterostructures challenge our fundamental understanding. Insights on the early growth stage of interfaces and its influence on resulting physical properties are scarce - typically the information is inferred from post growth characterization. Her… Show more

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Cited by 13 publications
(20 citation statements)
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“…This ensures that our simulations allow general conclusions on the oxygen vacancy redistribution, although the exact initial distribution is unknown. By choosing this state as a starting point for our simulations, we also assume that the oxygen transfer between the oxygen scavenging layer and the SrTiO 3 substrate has already taken place during sample preparation [31,54]. After sample preparation, the rate of oxygen transfer is expected to become insignificant, because the sheet carrier density in such samples typically remains constant over long periods of time [41,47].…”
Section: A Initial Statementioning
confidence: 99%
See 1 more Smart Citation
“…This ensures that our simulations allow general conclusions on the oxygen vacancy redistribution, although the exact initial distribution is unknown. By choosing this state as a starting point for our simulations, we also assume that the oxygen transfer between the oxygen scavenging layer and the SrTiO 3 substrate has already taken place during sample preparation [31,54]. After sample preparation, the rate of oxygen transfer is expected to become insignificant, because the sheet carrier density in such samples typically remains constant over long periods of time [41,47].…”
Section: A Initial Statementioning
confidence: 99%
“…While there are other studies [19,[21][22][23]31,33,41,50,[52][53][54] that report changes in the oxygen vacancy profile at SrTiO 3 -based heterointerfaces, the involved dynamics of ions in a complex energy landscape, with strong concentration gradients and intrinsic electric fields, has not been discussed in detail yet. Consequently, several questions remain unclear: What are the driving forces involved in the oxygen vacancy redistribution?…”
Section: Introductionmentioning
confidence: 99%
“…Several studies also investigate the effect of the particle bombardment along with other stimuli occurring during the PLD . This can be done by measuring the conductivity of the STO‐based heterostructure in real‐time during the deposition.…”
Section: Other Factors: Adsorbates Particle Bombardment and Temperamentioning
confidence: 99%
“…The real‐time monitoring of the conductivity in STO‐based heterostructures offers the potential for tailoring the conductivity on‐the‐fly by in situ switching from one target to another or by varying the deposition conditions . Combined with other in situ characterization techniques such as reflective high‐energy electron diffraction and XPS, this is a powerful method for achieving the desired properties of heterostructures.…”
Section: Other Factors: Adsorbates Particle Bombardment and Temperamentioning
confidence: 99%
“…[ 2 ] These features render STO a crucial material for the implementation of oxide‐based electronics. [ 3 ] Quickly after the report on the remarkable transport properties emerging at the LAO/STO interface [ 1 ] and other STO‐based heterostructures, [ 4 , 5 , 6 , 7 ] a 2DEG was directly observed by angle‐resolved photoemission (ARPES) on the surface of bare STO, [ 8 , 9 ] renewing the interest in the basic physics of this material.…”
Section: Introductionmentioning
confidence: 99%