On the Factors Determining the Morphology of Wet‐Etched n‐ and p ‐ GaP Single‐Crystal Surfaces

Goossens, H. H.; Gomes, W. P.

doi:10.1149/1.2085856

Cited by 19 publications

(11 citation statements)

References 15 publications

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“…It appears likely that many factors are involved: surface film formation, varying potential drop across the Helmholtz region caused, for example, by surface state charging, and so on. Even crystallographic orientations appear to be important [59]. These aspects have been discussed by other authors [14, 55,60].…”

Section: Current-potential Behaviormentioning

confidence: 74%

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Fundamentals of Semiconductor Electrochemistry and Photoelectrochemistry

Rajeshwar

2002

Encyclopedia of Electrochemistry

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The sections in this article are Introduction and Scope Electron Energy Levels in Semiconductors and Energy Band Model The Semiconductor–Electrolyte Interface at Equilibrium The Equilibration Process The Depletion Layer Mapping of the Semiconductor Band‐edge Positions Relative to Solution Redox Levels Surface States and Other Complications Charge Transfer Processes in the Dark Current‐potential Behavior Dark Processes Mediated by Surface States or by Space Charge Layer Recombination Rate‐limiting Steps in Charge Transfer Processes in the Dark Light Absorption by the Semiconductor Electrode and Carrier Collection Light Absorption and Carrier Generation Carrier Collection Photocurrent‐potential Behavior Dynamics of Photoinduced Charge Transfer Hot Carrier Transfer Multielectron Photoprocesses Nanocrystalline Semiconductor Films and Size Quantization Introductory Remarks The Nanocrystalline Film–Electrolyte Interface and Charge Storage Behavior in the Dark Photoexcitation and Carrier Collection: Steady State Behavior Photoexcitation and Carrier Collection: Dynamic Behavior Size Quantization Chemically Modified Semiconductor–Electrolyte Interfaces Single Crystals Nanocrystalline Semiconductor Films and Composites Types of Photoelectrochemical Devices Conclusion Acknowledgments

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Section: Current-potential Behaviormentioning

confidence: 74%

“…( 17) predicts a Tafel slope of 60 mV per decade at 298 K. In many instances [53,54], such a slope indeed is observed. In many cases, however, the slopes are higher than the ''ideal'' value [14, [55][56][57][58][59].…”

Section: Current-potential Behaviormentioning

confidence: 99%

Fundamentals of Semiconductor Electrochemistry and Photoelectrochemistry

Rajeshwar

2002

Encyclopedia of Electrochemistry

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“…Etching of III-V semiconductors is often observed to be anisotropic. For example both chemical [29][30][31][32] and electrochemical 33,34 etching of III-V semiconductors show preferential etching of {111}B planes (i.e. group-V-terminated planes).…”

Section: Introductionmentioning

confidence: 99%

“…The slowest-etching plane is usually {111}A and so these facets are revealed during etching of InP, 35,36 GaAs 34,37,38 and GaP. 31 Due to the differing etch rates of crystal planes, the formation of tetrahedral etch pits (seen as dove-tailed and v-groove voids, respectively, in (011) and (01% 1) cross sections) is observed on the (100) surface of III-V semiconductors. 32,36,37 We have previously investigated [39][40][41][42][43][44] the early stages of pore formation in InP in aqueous KOH electrolytes.…”

Section: Introductionmentioning

confidence: 99%

Propagation of nanopores during anodic etching of n-InP in KOH

Lynch

Quill

O’Dwyer

et al. 2013

Phys. Chem. Chem. Phys.

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We propose a three-step model of electrochemical nanopore formation in n-InP in KOH that explains how crystallographically oriented etching can occur even though the rate-determining process (hole generation) occurs only at pore tips. The model shows that competition in kinetics between hole diffusion and electrochemical reaction determines the average diffusion distance of holes along the semiconductor surface and this, in turn, determines whether etching is crystallographic. If the kinetics of reaction are slow relative to diffusion, etching can occur at preferred crystallographic sites within a zone in the vicinity of the pore tip, leading to pore propagation in preferential directions. Symmetrical etching of three {111}A faces forming the pore tip causes it to propagate in the (remaining) [111]A direction. As a pore etches, propagating atomic ledges can meet to form sites that can become new pore tips and this enables branching of pores along any of the [111]A directions. The model explains the observed uniform width of pores and its variation with temperature, carrier concentration and electrolyte concentration. It also explains pore wall thickness, and deviations of pore propagation from the [111]A directions. We believe that the model is generally applicable to electrochemical pore formation in III-V semiconductors.

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“…In a case of GaP, Kaminska et al 1) pointed out that its (111) surface inevitably becomes rough or cloudy during chemical polishing in almost all the etchants. On the other hand, Goossens and Gomes 2) found that anodic dissolution at 1.6 V SCE (potential vs. saturated calomel electrode) in an aqueous 0.1 kmolÁm À3 KOH solution brought about a smooth (111) surface of p-type GaP; although no active dissolution occurred in the (111) surface of n-type GaP at the same etching condition, the anodic photoetching under full light illumination (800 Wm À2 , Hg-lamp) at 1.6 V SCE in the above solution also gave rise to the flat (111) surface. According to them, such an overall etch process proceeds via the photoelectrochemical reaction expressed by the following equation:…”

Section: Introductionmentioning

confidence: 99%