On the Feasibility of a New Approach for Developing a Piezoresistive 3D Stress Sensing Rosette

Gharib, H H; Moussa, Walied A.

doi:10.1109/jsen.2010.2102350

Cited by 22 publications

(13 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Overetching of the larger holes (due to ARDE effects) further increased their surface roughness and undercut, which offers some explanation for the resistance values of the TSVs with an aspect ratio of 1.5. Improvement of the hole sidewall profiles should reduce the TSV resistance values; recent MEMS sensor development by a co-worker [33,34] has indicated that the TSV filling process presented in this paper is also compatible with a Bosch etch profile, as shown in figure 6(b), although detailed characterization results are not available at this time.…”

Section: Tsv Resistancementioning

confidence: 99%

A packaging solution utilizing adhesive-filled TSVs and flip–chip methods

Benfield

Lou

Moussa

2012

J. Micromech. Microeng.

View full text Add to dashboard Cite

A compact packaging solution for microelectromechanical systems (MEMS) devices is presented. The 3D-integrated packaging solution was designed for the instrumentation of a spinal screw with a wireless sensor array, but may be adapted for a variety of applications. To achieve the compact package size, an unobtrusive through-silicon via (TSV) design was added to the microfabrication process flow for the MEMS sensor. These TSVs allowed vertical integration of the MEMS devices onto flexible printed circuit boards (FPCBs) using a flip-chip system. Ohmic connections with resistance values below 1 have been achieved for 100 μm TSVs in 300 and 500 μm substrates. This paper describes the design and microfabrication process flow for the TSVs, and provides details on the flip-chip techniques used to electrically and structurally connect the MEMS devices to the FPCBs.

show abstract

Section: Tsv Resistancementioning

confidence: 99%

A packaging solution utilizing adhesive-filled TSVs and flip–chip methods

Benfield

Lou

Moussa

2012

J. Micromech. Microeng.

View full text Add to dashboard Cite

show abstract

“…Doped crystalline silicon has the merit of developing a single PR rosette, featured over the (111) plane, that can perform a 3D stress measurement [6,7]. The early attempts to develop a PR 3D stress sensor have been were carried out in AMNSTC research laboratory at Auburn University [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

“…Accordingly, strain engineering has a remarkable impact on the sensitivity and temperature independency of the PR coefficients. Besides that, strain technology can be employed during the microfabrication process to reduce the microfabrication complexity and cost of a multi-doping 3D stress sensor, like the eight-element [7] or the ten-element [6] rosettes. Both utilized different doping, which requires additional microfabrication steps, to acquire different groups of PR coefficients.…”

Section: Introductionmentioning

confidence: 99%

Development of MEMS-based piezoresistive 3D stress/strain sensor using strain technology and smart temperature compensation

Kayed

Balbola

Lou

et al. 2021

J. Micromech. Microeng.

View full text Add to dashboard Cite

This paper presents the microfabrication and testing of a membrane-free eight-element single-polarity (n-type) sensing rosette integrated with strained silicon technology over (111) silicon plane to measure the full 3D stress/strain tensor with full temperature compensation. Such n-type piezoresistive (PR) sensor has low sensitivity to the out-of-plane components compared to the in-plane components. To improve the sensitivity of such sensors to the out-of-plane components, a strained silicon technique was integrated into the sensing rosette during the microfabrication process using a highly compressive film produced by plasma enhanced chemical vapor deposition silicon nitride. For experimental verification, a prototype device featuring the proposed sensing rosette was microfabricated using semiconductors fabrication processes. The experimental analysis applied both, in-plane and out-of-plane stresses at different temperatures over a range from −20 °С to 60 °С. In this work, a smart sensing calibration algorithm, utilizing machine learning, is employed to reduce the temperature impact on both sensitivity and resistance of PR coefficients during stress measurement. The developed sensor is capable of accurately extracting the applied stress/strain components with temperature compensation.

show abstract

“…Dual polarity eight sensing elements (four n-type and four p-type) were used in the sensor design but only four stress components are temperature compensated. Later, Gharib and Moussa [26] developed a single polarity 3-D stress sensor which can measure all the six temperature compensated stress components. However, high doping concentration (1 × 10 19 − 1 × 10 20 atoms/cm 3 ) is adopted in the sensor design in order to reduce the temperature effect on sensor performance.…”

Section: Introductionmentioning

confidence: 99%

Modelling and Design of MEMS Piezoresistive Out-of-Plane Shear and Normal Stress Sensors

Zhang

2018

Sensors

View full text Add to dashboard Cite

In this paper, the design of MEMS piezoresistive out-of-plane shear and normal stress sensor is described. To improve the sensor sensitivity, a methodology by the incorporation of stress concentration regions, namely surface trenches in the proximity of sensing elements was explored in detail. The finite element (FE) model, verified by a five-layer analytical model was developed as a tool to model the performance of the sensor and guide the geometric optimization of the surface trenches. Optimum location and dimensions of the surface trenches have been obtained through a comprehensive FE analysis. The microfabrication and packing scheme was introduced to prototype the sensor with optimum geometric characteristics of surface trenches. Signal output from the prototyped sensor was tested and compared with those from FE simulation. Good agreement has been achieved between the simulation and experimental results. Moreover, the results suggest the incorporation of surface trenches can help improve the sensor sensitivity. More specifically, the sum of signal output from the sensor chip with surface trenches are 4.52, 5.06 and 5.72 times higher compared to flat sensor chip for center sensing area, edge sensing areas 1 and 2, respectively.

show abstract

On the Feasibility of a New Approach for Developing a Piezoresistive 3D Stress Sensing Rosette

Cited by 22 publications

References 40 publications

A packaging solution utilizing adhesive-filled TSVs and flip–chip methods

A packaging solution utilizing adhesive-filled TSVs and flip–chip methods

Development of MEMS-based piezoresistive 3D stress/strain sensor using strain technology and smart temperature compensation

Modelling and Design of MEMS Piezoresistive Out-of-Plane Shear and Normal Stress Sensors

Contact Info

Product

Resources

About