On the finite element modeling of dislocation dynamics during semiconductor crystal growth

Tsai, Chi-Tay

doi:10.1016/0022-0248(91)90085-j

Cited by 40 publications

(29 citation statements)

References 18 publications

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“…27,86 Sheet material appears to be similar to ribbon, but key differences include feedstock quality and structural defect density and character. In sheet mc-Si grown from feedstock containing high total metal concentrations, material performance can benefit from the proper amount and (three-dimensional) location of random, equiaxial grain boundaries, which serve as nucleation sites for transition metal precipitates, which in turn reduce the metal content 68 within the grains. Metals are also found concentrated in intragranular defects and, due to cleverly chosen growth conditions, segregated toward the back of the wafer 13 (away from the pn junction) during growth.…”

Section: Discussionmentioning

confidence: 99%

“…The crystal growth conditions play a large role in determining the densities and types of structural defects within the crystal, [68][69][70] i.e., the density of precipitation sites for impurities. Large-angle and random grain boundaries common to sheet 36,37 and ingot-grown mc-Si are the easiest for precipitate nucleation, given model defect studies.…”

Section: Structural Defectsmentioning

confidence: 99%

See 1 more Smart Citation

Chemical natures and distributions of metal impurities in multicrystalline silicon materials

Buonassisi

Istratov

Pickett

et al. 2006

Progress in Photovoltaics

176

106

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We present a comprehensive summary of our observations of metal-rich particles in multicrystalline silicon (mc-Si) solar cell materials from multiple vendors, including directionally-solidified ingot-grown, sheet, and ribbon, as well as multicrystalline float zone materials contaminated during growth. In each material, the elemental nature, chemical states, and distributions of metal-rich particles are assessed by synchrotron-based analytical x-ray microprobe techniques. Certain universal physical principles appear to govern the behavior of metals in nearly all materials: (a) Two types of metal-rich particles can be observed (metal silicide nanoprecipitates and metal-rich inclusions up to tens of microns in size, frequently oxidized), (b) spatial distributions of individual elements strongly depend on their solubility and diffusivity, and (c) strong interactions exist between metals and certain types of structural defects. Differences in the distribution and elemental nature of metal contamination between different mc-Si materials can largely be explained by variations in crystal

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Section: Discussionmentioning

confidence: 99%

Section: Structural Defectsmentioning

confidence: 99%

Chemical natures and distributions of metal impurities in multicrystalline silicon materials

Buonassisi

Istratov

Pickett

et al. 2006

Progress in Photovoltaics

176

106

View full text Add to dashboard Cite

show abstract

“…Models of the dislocation evolution usually exploit the plastic strain rate dependence on the deviatory stress and dislocations parameters ( the density, the velocity, the Burgers vector, etc.) [58] and an equation for the evolution of the dislocation density [36,41,55].…”

Section: Assessment Of Crystal Qualitymentioning

confidence: 99%

Industrial challenges for numerical simulation of crystal growth

Богданов¹,

Ofengeim²,

Zhmakin³

2004

Open Physics

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Abstract:Numerical simulation of industrial crystal growth is di¯cult due to its multidisciplinary nature and the complex geometry of the real-life growth equipment. An attempt is made to itemize physical phenomena dominant in the di¬erent methods for growth of bulk crystals from the melt and the vapor phase as well as to review corresponding numerical approaches. Academic research and industrial applications are compared. Development of a computational engine and a graphic user interface of the industry-oriented codes is discussed. A simulator for the entire growth process of bulk crystals by sublimation method is described.

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“…When stress level exceeds a critical value, a plastic creep occurs. Models of dislocations evolution usually exploit the plastic strain rate dependence on the deviatoric stress and dislocations parameters ( the density, the velocity, the Burgers vector) [39] and an equation for the evolution of the dislocation density [24,29,37].…”

Section: Mathematical Modelsmentioning

confidence: 99%

Industrial Challenges for Numerical Simulation of Crystal Growth

Ofengeim¹,

Zhmakin

2003

Lecture Notes in Computer Science

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Abstract. Numerical simulation of industrial crystal growth is difficult due to its multidisciplinary nature and complex geometry of real-life growth equipment. An attempt is made to itemize physical phenomena dominant in different methods for growth of bulk crystals from melt and from vapour phase and to review corresponding numerical approaches. Academic research and industrial applications are compared. Development of computational engine and graphic user interface of industryoriented codes is discussesd. In conclusion, a simulator for the entire growth process of bulk crystals by sublimation method is described.

show abstract

On the finite element modeling of dislocation dynamics during semiconductor crystal growth

Cited by 40 publications

References 18 publications

Chemical natures and distributions of metal impurities in multicrystalline silicon materials

Chemical natures and distributions of metal impurities in multicrystalline silicon materials

Industrial challenges for numerical simulation of crystal growth

Industrial Challenges for Numerical Simulation of Crystal Growth

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