On-The-Fly Interface Trap Measurement and Its Impact on the Understanding of NBTI Mechanism for p-MOSFETs with SiON Gate Dielectric

A new eye on NBTI-induced traps up to device lifetime using on the fly oxide trap method

“…It allows measuring both interface-trap and switching oxide-trap [border-trap (N bt )] individually. However and contrary to existing methods [7][8][9], the present method extracts N it and N bt using stress and CP in the same timeframe without stopping the stress. This method is derived from Oxide-trap charge-pumping (OTCP) method, developed for radiation effect [11,12].…”

“…Nevertheless, the microscopic nature of those components and which component dominates the NBTI stress and relaxation effects is till now questionable. In order to find the relative contribution of interface-and oxide-trap to V th after NBTI stress and recovery, researchers combine on-the-fly interface-trap (OTFIT) [7] using CP technique to extract V it [induced by interface-trap increase (N it )] and on-the-fly V th (OTF-V th ) [8] to extract V th . Subsequently, V ot [induced by oxide-trap increase (N ot )] is found by subtracting V it from the amount of V th .…”

On the permanent component profiling of the negative bias temperature instability in p-MOSFET devices

“…This allows tunneling processes to take place where, not only N it responses, but also the N bt within an appropriate distance for a given f [21]. However, the leakage parasitic current can compromise the analysis of CP data as a function of f, especially in NBTI stress using CP-based methods [32,33] where V L (for p-MOSFET) is set at high V Gstr resulting in excessive tunneling into oxide [13,34]. In fact, in devices with thick gate oxide, the leakage component is negligible.…”

An accurate extraction methodology for NBTI induced degradation using charge pumping based methods

“…The NBTI is performed using on-the-fly interface tap method OTFIT [4], on both LDD-PMOS and LDD-NMOS transistors with different L G and fixed W G . The stress/measurement/stress (SMS) sequences have been performed at CDTA using fully automated bench.…”

“…Therefore, many different measurement methods have been proposed in order to understand the NBTI physics based mechanisms and accurate estimation of the device life time. The most used methods are Charge Pumping (CP) based methods such as Conventional charge pumping (CCP) [1]- [2] and on-the-fly interface trap (OTFIT) [3]- [4]. An important source of errors for CP based methods is the carrier recombination in MOSFET substrate bulk, also known as the geometric component (GC) [1]- [2], [5].…”