On the formation of stacking fault tetrahedra in irradiated austenitic stainless steels – A literature review

Schibli, Raluca; Schäublin, R.

doi:10.1016/j.jnucmat.2013.05.077

Cited by 34 publications

(13 citation statements)

References 78 publications

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“…Over the years, many different mechanisms have been put forward on the formation of SFT under plastic deformation, melt-quench and irradiation conditions [27,28]. In relation to irradiation processes, three main mechanisms are generally applicable.…”

Section: Vacancy Diffusion In Pure Nimentioning

confidence: 99%

“…This mechanism was illustrated using TAD-MD simulations by Uberuaga et al [31]. The third mechanism is by mere aggregation of single vacancies [27,[32][33][34]. Both experiments and MD simulations have supported the first two mechanisms, whereas the dynamical occurrence of the third mechanism has never been captured from MD simulations.…”

Section: Vacancy Diffusion In Pure Nimentioning

confidence: 99%

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Point defect evolution in Ni, NiFe and NiCr alloys from atomistic simulations and irradiation experiments

et al. 2015

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a b s t r a c tUsing molecular dynamics simulations, we elucidate irradiation-induced point defect evolution in fcc pure Ni, Ni 0.5 Fe 0.5 , and Ni 0.8 Cr 0.2 solid solution alloys. We find that irradiation-induced interstitials form dislocation loops that are of 1/3h1 1 1i{1 1 1}-type, consistent with our experimental results. While the loops are formed in all the three materials, the kinetics of formation is considerably slower in NiFe and NiCr than in pure Ni, indicating that defect migration barriers and extended defect formation energies could be higher in the alloys than pure Ni. As a result, while larger size clusters are formed in pure Ni, smaller and more clusters are observed in the alloys. Vacancy diffusion occurs at relatively higher temperatures than interstitials, and their clustering leads to the formation of stacking fault tetrahedra, consistent with our experiments. The results also show that the surviving Frenkel pairs are composition dependent and are largely Ni dominated.

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Section: Vacancy Diffusion In Pure Nimentioning

confidence: 99%

Section: Vacancy Diffusion In Pure Nimentioning

confidence: 99%

Point defect evolution in Ni, NiFe and NiCr alloys from atomistic simulations and irradiation experiments

et al. 2015

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“…[5] However, there remains a speculation about whether the nucleation of SFT (in melt-quench or irradiation) indeed requires condensation of vacancies into loops followed by their transformation into SFT, or if it could form by simple agglomeration of vacancies. [2,[6][7][8][9][10] De Jong and Koehler [2] initially postulated the vacancy-tetrahedron as a nucleation center for SFT, and later some experimental and theoretical studies indicated the possibility of this mechanism. [10][11][12] However, due to the lack of direct atomistic observation under experiments, and the absence of MD simulations that capture diffusion and clustering of vacancies to form SFT, the operation of such a mechanism has not yet been fully ascertained.…”

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confidence: 99%

Formation and growth of stacking fault tetrahedra in Ni via vacancy aggregation mechanism

Aidhy

Jin

et al. 2016

Scripta Materialia

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Using molecular dynamics simulations, the formation and growth of stacking fault tetrahedra (SFT) are captured by vacancy cluster diffusion and aggregation mechanisms in Ni. The vacancytetrahedron acts as a nucleation point for SFT formation. Simulations show that perfect SFT can grow to the next size perfect SFT via a vacancy aggregation mechanism. The stopping and range of ions in matter (SRIM) calculations and transmission electron microscopy (TEM) observations reveal that SFT can form farther away from the initial cascade-event locations, indicating the operation of diffusion-based vacancy-aggregation mechanism. © 2015. This manuscript version is made available under the Elsevier user license

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“…In addition, at relatively low temperatures where vacancies are not highly mobile, vacancies are accumulated to form small stacking fault tetrahedra (SFTs) or vacancy-type dislocation loops at later stage of irradiation [16][17][18]. These small vacancy clusters were not visible on bright-field images but with the weak-beam darkfield technique using 200 kV TEM after electron irradiation [9,17].…”

Section: Methodsmentioning

confidence: 99%

One-dimensional migration of interstitial clusters in SUS316L and its model alloys at elevated temperatures

Satoh

Abe

Matsukawa

et al. 2015

Philosophical Magazine

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For self-interstitial atom (SIA) clusters in various concentrated alloys, onedimensional (1D) migration is induced by electron irradiation around 300 K. But at elevated temperatures, the 1D migration frequency decreases to less than one-tenth of that around 300 K in iron-based bcc alloys. In this study, we examined mechanisms of 1D migration at elevated temperatures using in situ observation of SUS316L and its model alloys with high-voltage electron microscopy. First, for elevated temperatures, we examined the effects of annealing and shortterm electron irradiation of SIA clusters on their subsequent 1D migration. In annealed SUS316L, 1D migration was suppressed and then recovered by prolonged irradiation at 300 K. In high-purity model alloy Fe-18Cr-13Ni, annealing or irradiation had no effect. Addition of carbon or oxygen to the model alloy suppressed 1D migration after annealing. Manganese and silicon did not suppress 1D migration after annealing but after short-term electron irradiation. The suppression was attributable to the pinning of SIA clusters by segregated solute elements, and the recovery was to the dissolution of the segregation by interatomic mixing under electron irradiation. Next, we examined 1D migration of SIA clusters in SUS316L under continuous electron irradiation at elevated temperatures. The 1D migration frequency at 673 K was proportional to the irradiation intensity. It was as high as half of that at 300 K. We proposed that 1D migration is controlled by the competition of two effects: induction of 1D migration by interatomic mixing and suppression by solute segregation.

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On the formation of stacking fault tetrahedra in irradiated austenitic stainless steels – A literature review

Cited by 34 publications

References 78 publications

Point defect evolution in Ni, NiFe and NiCr alloys from atomistic simulations and irradiation experiments

Point defect evolution in Ni, NiFe and NiCr alloys from atomistic simulations and irradiation experiments

Formation and growth of stacking fault tetrahedra in Ni via vacancy aggregation mechanism

One-dimensional migration of interstitial clusters in SUS316L and its model alloys at elevated temperatures

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