2000
DOI: 10.1007/978-94-010-0938-6_17
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On the Globular Cluster IMF Below 1 M⊙

Abstract: Accurate luminosity functions (LF) for a dozen globular clusters have now been measured at or just beyond their half-light radius using HST. They span almost the entire cluster main sequence (MS) below 0.75 M ⊙ . All these clusters exhibit LF that rise continuously from an absolute I magnitude M I ≃ 6 to a peak at M I ≃ 8.5−9 and then drop with increasing M I . Transformation of the LF into mass functions (MF) by means of the mass luminosity (ML) relations of Baraffe et al. (1997) and Cassisi et al. (1999) th… Show more

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Cited by 2 publications
(2 citation statements)
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“…Old as well as young and rich LMC clusters help us to study several effects related to gravitational dynamics of N -body systems, including mass segregation and stellar evaporation (Santiago et al 2001;de Grijs et al 2002a). These effects are an important step towards recovering the cluster initial conditions and assessing the universality of the initial mass function (Goodwin 1997;Paresce & de Marchi 2000;Kroupa 2002;de Grijs et al 2002b).…”
Section: Globular Clusters In the Local Groupmentioning
confidence: 99%
“…Old as well as young and rich LMC clusters help us to study several effects related to gravitational dynamics of N -body systems, including mass segregation and stellar evaporation (Santiago et al 2001;de Grijs et al 2002a). These effects are an important step towards recovering the cluster initial conditions and assessing the universality of the initial mass function (Goodwin 1997;Paresce & de Marchi 2000;Kroupa 2002;de Grijs et al 2002b).…”
Section: Globular Clusters In the Local Groupmentioning
confidence: 99%
“…6,10,11 Semiconductor device architectures continuously transform from planar to 3D systems in commercial CMOS electronics in pursuit of enhanced performance, minimized footprint, and lower power requirements such as the nanoplate stacks used in gate-all-around (GAA) transistors. 12 This transformation to 3D architecture has already been evident from the growing interest of the semiconductor market in the transition from a planar to a nonplanar transistor architecture. Over the last two decades, this transition resulted in successful technology nodes incorporating fin-type field effect (FET) to GAA transistors.…”
Section: Introductionmentioning
confidence: 99%