On the growth of stacking faults and dislocations induced in silicon by phosphorus predeposition

Armigliato, A.; Servidori, M.; Solmi, S.; Vecchi, I.

doi:10.1063/1.323931

Cited by 45 publications

(13 citation statements)

References 22 publications

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“…It is known that SiP precipitates can be formed at low temperatures, readily and quickly. 7,[11][12][13][14] Then, "SiP embryos" will be generated during the cooling process (800-600) C significantly. These SiP embryos would act as the heterogeneous nucleation sites for oxygen interstitial atoms and enhance the grown-in oxygen precipitation during the ingot pulling process.…”

Section: Resultsmentioning

confidence: 99%

Grown-in precipitates in heavily phosphorus-doped Czochralski silicon

Zeng

Chen

et al. 2012

Journal of Applied Physics

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Through comparing the oxygen precipitation in the heavily and lightly phosphorus (P)-doped Czochralski silicon (CZ Si) specimens subjected to the simulated cooling processes of silicon ingot, we researched the influences of heavily P doping on grown-in precipitates by preferential etching and transmission electron microscopy (TEM). It was found that grown-in precipitates were more significant in heavily P-doped CZ Si than in lightly one. Most grown-in precipitates in heavily P-doped CZ Si were generated at (800-600) C. The significant grown-in oxygen precipitates in the heavily P-doped CZ Si would change the density and morphology of oxygen precipitation. TEM examination revealed that the grown-in precipitates in heavily P-doped CZ Si were amorphous oxygen precipitates composed of tiny precipitates in essential. Although more or less phosphorus may be incorporated in the grown-in precipitates, however, phosphorus cannot be detected so far. We further confirmed that extending annealing at 550 C produced significant silicon phosphide (SiP) precipitation in heavily P-doped CZ Si. Summarily, enhancement of grown-in oxygen precipitates was attributed to SiP precipitation and high-concentration vacancy, tentatively. Nonetheless, further investigation on the essential of grown-in precipitates in heavily P-doped CZ Si is worthy.

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Section: Resultsmentioning

confidence: 99%

Grown-in precipitates in heavily phosphorus-doped Czochralski silicon

Zeng

Chen

et al. 2012

Journal of Applied Physics

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“…Namely, the increase in the pressure of O 2 annealing ambient during oxidation process led to the increase in oxide thickness, thereby resulting in the increment of the equilibrium concentration of Si interstitials in bulk Si. Moreover, similar to POCl 3 ‐diffusion process, PSG film could serve as dopant (P atom) source . Numerous P atoms were liberated from the PSG film and diffused into the Si lattice at thermal cycle.…”

Section: Resultsmentioning

confidence: 99%

Effects of the flow rate of O₂ annealing ambient on structural and electrical properties of n+ emitter junctions formed using screen‐printed phosphorus diffusion process

Kim

Yun

Seo

et al. 2012

Surface & Interface Analysis

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We have investigated the effects of the flow rate of O2 annealing ambient on the structural and electrical properties of the emitters with n+/p junctions formed using the screen printing of phosphorus (P) dopant paste, followed by O2 annealing. The reaction between P‐paste and Si led to the formation of phosphorus silicate glass layer, of which P atoms were mostly segregated in surface and interface regions. The sheet resistance of the screen‐printed n+ emitters formed under O2 flow rate of 5 l/min (LPM) was lower than that of 1 LPM. The recombination mechanism dominated the current transport in the forward bias regions of the screen‐printed n+ emitter, regardless of O2 flow rate. The n+ emitter formed under O2 flow rates of 5 LPM exhibited better rectification behavior with low reverse leakage, as compared with that of 1 LPM. The formation of thicker phosphorus silicate glass film caused by the increase in the O2 flow rate resulted in the increase in the equilibrium concentration of Si interstitials in bulk Si and provided more P atoms being incorporated in n+/p emitter junction. The increases in maximum concentration of P atoms and junction depth caused by the increase in the O2 flow rate could be responsible for superior junction quality of n+ emitter formed under O2 flow rates of 5 LPM. Copyright © 2012 John Wiley & Sons, Ltd.

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“…Armigliato et al 12,13 reported the occurrence of SiP precipitates after the phosphorous predeposition at 920 and 1000°C using POCl 3 . They found that the structure of SiP precipitates was corresponding to an orthorhombic one.…”

Section: Resultsmentioning

confidence: 99%

Oxygen precipitation heterogeneously nucleating on silicon phosphide precipitates in heavily phosphorus-doped Czochralski silicon

Zeng

Tian

et al. 2009

Journal of Applied Physics

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Oxygen precipitation in nitrogen doped Czochralski silicon wafers. I. Formation mechanisms of near-surface and bulk defectsThrough comparison between the oxygen precipitation ͑OP͒ behaviors in heavily and lightly phosphorus ͑P͒-doped Czochralski silicon ͑CZ-Si͒ crystals subjected to low-high two-step anneal of 600, 650, or 750°C / 8 h + 1050°C / 16 h, we have found that in heavily P-doped CZ-Si, OP is much stronger in the case with the nucleation anneal at 600 or 650°C while it is to some extent suppressed in the case with the nucleation anneal at 750°C in contrast to lightly doped CZ-Si where nucleation is enhanced at 750°C. Transmission electron microscopy investigation reveals that silicon phosphide precipitates of face-centered-cubic SiP form during the nucleation anneal at temperatures 650°C and below. The SiP precipitates act as the heterogeneous nuclei for OP during the subsequent high temperature anneal while the oxygen precipitate nuclei containing certain amounts of P atoms generate during the nucleation anneal at 750°C. They are further coarsened to be larger oxygen precipitates during the subsequent high temperature anneal. Of significance is that the oxygen precipitate nucleation mechanism operating at certain temperatures for heavily P-doped CZ-Si is found to be completely different from that of lightly P-doped CZ-Si. We believe that the present work provides a further insight into OP in CZ-Si.

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On the growth of stacking faults and dislocations induced in silicon by phosphorus predeposition

Cited by 45 publications

References 22 publications

Grown-in precipitates in heavily phosphorus-doped Czochralski silicon

Grown-in precipitates in heavily phosphorus-doped Czochralski silicon

Effects of the flow rate of O₂ annealing ambient on structural and electrical properties of n+ emitter junctions formed using screen‐printed phosphorus diffusion process

Oxygen precipitation heterogeneously nucleating on silicon phosphide precipitates in heavily phosphorus-doped Czochralski silicon

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On the growth of stacking faults and dislocations induced in silicon by phosphorus predeposition

Cited by 45 publications

References 22 publications

Grown-in precipitates in heavily phosphorus-doped Czochralski silicon

Grown-in precipitates in heavily phosphorus-doped Czochralski silicon

Effects of the flow rate of O2 annealing ambient on structural and electrical properties of n+ emitter junctions formed using screen‐printed phosphorus diffusion process

Oxygen precipitation heterogeneously nucleating on silicon phosphide precipitates in heavily phosphorus-doped Czochralski silicon

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Effects of the flow rate of O₂ annealing ambient on structural and electrical properties of n+ emitter junctions formed using screen‐printed phosphorus diffusion process