On the identification of Sb2Se3 using Raman scattering

Shongalova, Aigul; Correia, M. R.; Vermang, Bart; Cunha, José M. V.; Salomé, Pedro M. P.; Fernandes, Paulo A.

doi:10.1557/mrc.2018.94

Cited by 92 publications

(56 citation statements)

References 31 publications

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“…Raman spectroscopy is capable of revealing the chemical states of the Sb 2 Se 3 absorber originally protected by TiO 2 layer. [42] We believe that this broad feature represents the decomposed products from the surface of Sb 2 Se 3 , which are either Sb 2 O 3 or Se, as described in Equation (2 The most intense peak (A 2g ) at ≈190 cm −1 along with a sub-peak at ≈210 cm −1 clearly confirms the presence of the Sb 2 Se 3 phase, which matches well with the previous reports on Raman studies of Sb 2 Se 3 .…”

Section: Resultssupporting

confidence: 89%

Fullerene as a Photoelectron Transfer Promoter Enabling Stable TiO₂‐Protected Sb₂Se₃ Photocathodes for Photo‐Electrochemical Water Splitting

Tan

Yang

et al. 2019

Advanced Energy Materials

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Understanding the degradation mechanisms of photoelectrodes and improving their stability are essential for fully realizing solar‐to‐hydrogen conversion via photo‐electrochemical (PEC) devices. Although amorphous TiO2 layers have been widely employed as a protective layer on top of p‐type semiconductors to implement durable photocathodes, gradual photocurrent degradation is still unavoidable. This study elucidates the photocurrent degradation mechanisms of TiO2‐protected Sb2Se3 photocathodes and proposes a novel interface‐modification methodology in which fullerene (C60) is introduced as a photoelectron transfer promoter for significantly enhancing long‐term stability. It is demonstrated that the accumulation of photogenerated electrons at the surface of the TiO2 layer induces the reductive dissolution of TiO2, accompanied by photocurrent degradation. In addition, the insertion of the C60 photoelectron transfer promoter at the Pt/TiO2 interface facilitates the rapid transfer of photogenerated electrons out of the TiO2 layer, thereby yielding enhanced stability. The Pt/C60/TiO2/Sb2Se3 device exhibits a high photocurrent density of 17 mA cm−2 and outstanding stability over 10 h of operation, representing the best PEC performance and long‐term stability compared with previously reported Sb2Se3‐based photocathodes. This research not only provides in‐depth understanding of the degradation mechanisms of TiO2‐protected photocathodes, but also suggests a new direction to achieve durable photocathodes for photo‐electrochemical water splitting.

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Section: Resultssupporting

confidence: 89%

Fullerene as a Photoelectron Transfer Promoter Enabling Stable TiO₂‐Protected Sb₂Se₃ Photocathodes for Photo‐Electrochemical Water Splitting

Tan

Yang

et al. 2019

Advanced Energy Materials

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“…The crystallized form of Sb 2 Se 3 gives rise to three A g ‐symmetry peaks at 117, 190, and 211 cm −1 and two B x g peaks at 150 and 153 cm −1 , all corresponding to Sb 2 Se 3. [ 52,56,57 ] Both materials crystallize in an orthorhombic structure, which is validated from the Raman modes.…”

Section: Resultsmentioning

confidence: 81%

A New Family of Ultralow Loss Reversible Phase‐Change Materials for Photonic Integrated Circuits: Sb₂S₃ and Sb₂Se₃

Delaney

Zeimpekis

Lawson

et al. 2020

Adv Funct Materials

398

246

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Phase‐change materials (PCMs) are seeing tremendous interest for their use in reconfigurable photonic devices; however, the most common PCMs exhibit a large absorption loss in one or both states. Here, Sb2S3 and Sb2Se3 are demonstrated as a class of low loss, reversible alternatives to the standard commercially available chalcogenide PCMs. A contrast of refractive index of Δn = 0.60 for Sb2S3 and Δn = 0.77 for Sb2Se3 is reported, while maintaining very low losses (k < 10−5) in the telecommunications C‐band at 1550 nm. With a stronger absorption in the visible spectrum, Sb2Se3 allows for reversible optical switching using conventional visible wavelength lasers. Here, a stable switching endurance of better than 4000 cycles is demonstrated. To deal with the essentially zero intrinsic absorption losses, a new figure of merit (FOM) is introduced taking into account the measured waveguide losses when integrating these materials onto a standard silicon photonics platform. The FOM of 29 rad phase shift per dB of loss for Sb2Se3 outperforms Ge2Sb2Te5 by two orders of magnitude and paves the way for on‐chip programmable phase control. These truly low‐loss switchable materials open up new directions in programmable integrated photonic circuits, switchable metasurfaces, and nanophotonic devices.

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“…No degradation effects (peak at 250 cm À1 or higher) were observed in any of the spectra acquired. The power density at which oxidation occurs varies across studies 11,15 and was observed to vary even for different crystal planes. Analysis of this behaviour requires further work and is beyond the scope of this study but may be dependent on the wavelength of the illuminating laser and/or surface termination of the sample.…”

Section: Experimental and Computational Detailsmentioning

confidence: 98%

“…Raman spectroscopy is a fast and usually non-destructive technique which can be used to characterise Sb 2 Se 3 and its impurity phases. 11 While gaps in the literature remain, some recent analysis of Sb 2 Se 3 via Raman spectroscopy has furthered the current understanding of this material. In 2018, Shongalova et al resolved an issue of misinterpretation of one of the peaks in the analysis of previous Raman spectra.…”

Section: Introductionmentioning

confidence: 99%

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Identifying Raman modes of Sb₂Se₃ and their symmetries using angle-resolved polarised Raman spectra

et al. 2020

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The physical properties of antimony selenide (Sb 2 Se 3 ) are highly anisotropic. Angle-resolved polarised Raman spectroscopy was employed to characterise oriented crystals and used in conjunction with group theory structural analysis to assign vibrational symmetries to the peaks observed in the Raman spectra.The phonon energies were corroborated via density functional theory (DFT) calculations. Furthermore, a straightforward method is proposed to verify the desirable (001) plane orientation of film growth for device applications via minimisation of the 155 cm À1 peak in the Raman spectrum.

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On the identification of Sb2Se3 using Raman scattering

Abstract: Abstract

Cited by 92 publications

References 31 publications

Fullerene as a Photoelectron Transfer Promoter Enabling Stable TiO₂‐Protected Sb₂Se₃ Photocathodes for Photo‐Electrochemical Water Splitting

Fullerene as a Photoelectron Transfer Promoter Enabling Stable TiO₂‐Protected Sb₂Se₃ Photocathodes for Photo‐Electrochemical Water Splitting

A New Family of Ultralow Loss Reversible Phase‐Change Materials for Photonic Integrated Circuits: Sb₂S₃ and Sb₂Se₃

Identifying Raman modes of Sb₂Se₃ and their symmetries using angle-resolved polarised Raman spectra

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On the identification of Sb2Se3 using Raman scattering

Abstract: Abstract

Cited by 92 publications

References 31 publications

Fullerene as a Photoelectron Transfer Promoter Enabling Stable TiO2‐Protected Sb2Se3 Photocathodes for Photo‐Electrochemical Water Splitting

Fullerene as a Photoelectron Transfer Promoter Enabling Stable TiO2‐Protected Sb2Se3 Photocathodes for Photo‐Electrochemical Water Splitting

A New Family of Ultralow Loss Reversible Phase‐Change Materials for Photonic Integrated Circuits: Sb2S3 and Sb2Se3

Identifying Raman modes of Sb2Se3 and their symmetries using angle-resolved polarised Raman spectra

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Product

Resources

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Fullerene as a Photoelectron Transfer Promoter Enabling Stable TiO₂‐Protected Sb₂Se₃ Photocathodes for Photo‐Electrochemical Water Splitting

Fullerene as a Photoelectron Transfer Promoter Enabling Stable TiO₂‐Protected Sb₂Se₃ Photocathodes for Photo‐Electrochemical Water Splitting

A New Family of Ultralow Loss Reversible Phase‐Change Materials for Photonic Integrated Circuits: Sb₂S₃ and Sb₂Se₃

Identifying Raman modes of Sb₂Se₃ and their symmetries using angle-resolved polarised Raman spectra