On the Importance of Joint Mitigation Strategies for Front, Bulk, and Rear Recombination in Ultrathin Cu(In,Ga)Se<sub>2</sub> Solar Cells

Lopes, Tomás S.; Wild, Jessica de; Rocha, Cátia Vieira; Violas, André; Cunha, José M. V.; Teixeira, Jennifer P.; Curado, António; Oliveira, António J. N.; Borme, Jérôme; Birant, Gizem; Brammertz, Guy; Fernandes, Paulo A.; Vermang, Bart; Salomé, Pedro M. P.

doi:10.1021/acsami.1c07943

Cited by 15 publications

(15 citation statements)

References 108 publications

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“…All J-V representative curves present similar and well diode-behaved characteristics. Hence, no evidence of unoptimized passivation contact is noted in the J-V characteristic curves, as observed in previous attempts to implement non-conventional substrates in CIGS solar cells, through a clear roll-over effect and loss of "squareness" in the J-V curves [4,38,49]. Therefore, to understand the impact of the SiOx thickness on the device optoelectronic properties, the obtained figures of merit values were compared to those of Ref device.…”

Section: Resultsmentioning

confidence: 99%

SiO_x Patterned Based Substrates Implemented in Cu(In,Ga)Se₂ Ultrathin Solar Cells: Optimum Thickness

Oliveira

Teixeira

Chen

et al. 2022

IEEE J. Photovoltaics

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Interface recombination in sub-µm optoelectronics has a major detrimental impact on devices' performance, showing the need for tailored passivation strategies to reach a technological boost. In this work, SiOx passivation based substrates were developed and integrated into ultrathin Cu(In,Ga)Se2 (CIGS) solar cells. This study aims to understand the impact of a passivation strategy, which uses several SiOx layer thicknesses (3, 8, and 25 nm) integrated into high performance substrates (HPS). The experimental study is complemented with 3D Lumerical finite-difference time-domain (FDTD) and 2D Silvaco ATLAS optical and electrical simulations, respectively, to perform a decoupling of optical and electronic gains, allowing for a deep discussion on the impact of the SiOx layer thickness in the CIGS solar cell performance. This study shows that as the passivation layer thickness increases, a rise in parasitic losses is observed. Hence, a balance between beneficial passivation and optical effects with harmful architectural constraints defines a threshold thickness to attain the best solar cell performance. Analyzing their electrical parameters, the 8 nm novel SiOx based substrate achieved a light to power conversion efficiency value of 13.2 %, a 1.3 % absolute improvement over the conventional Mo substrate (without SiOx).

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Section: Resultsmentioning

confidence: 99%

SiO_x Patterned Based Substrates Implemented in Cu(In,Ga)Se₂ Ultrathin Solar Cells: Optimum Thickness

Oliveira

Teixeira

Chen

et al. 2022

IEEE J. Photovoltaics

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“…[ 25 ] Such a concept is far from optimized for ultrathin cells. [ 35 ] Thus, other strategies, such as patterned dielectric layers, have been studied. [ 36–40 ] Moreover, in ultrathin solar cells, the absorber thickness value is lower than the optical thickness required to fully absorb the incoming light, resulting in high optical losses, which leads to a short‐circuit current density ( J sc ) value decrease.…”

Section: Introductionmentioning

confidence: 99%

Exploiting the Optical Limits of Thin‐Film Solar Cells: A Review on Light Management Strategies in Cu(In,Ga)Se₂

Oliveira

Teixeira

Ramos

et al. 2022

Advanced Photonics Research

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Light management strategies are of utmost importance to allow Cu(In,Ga)Se2 (CIGS) technology market expansion, as it would enable a conversion efficiency boost as well as thinner absorber layers, increasing sustainability and reducing production costs. However, fabrication and architecture constraints hamper the direct transfer of light management architectures from other photovoltaic technologies. The demand for light management in thin and ultrathin CIGS cells is analyzed by a critical description of the optical loss mechanisms in these devices. Three main pathways to tackle the optical losses are identified: front light management architectures that assist for an omnidirectional low reflection; rear architectures that enable an enhanced optical path length; and unconventional spectral conversion strategies for full spectral harvesting. An outlook over the challenges and developments of light management architectures is performed, establishing a research roadmap for future works in light management for CIGS technology. Following the extensive review, it is expected that combining antireflection, light trapping, and conversion mechanisms, a 27% CIGS solar cell can be achieved.

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“…Following the intense miniaturization of optoelectronic devices, surface and interface properties become increasingly important and are often decisive for the performance of the photovoltaic module. For solar cells, a great amount of research has been made into new contacts and interface passivation strategies [1][2][3][4][5] so that interface recombination losses can be lowered. In this context, even for silicon technology that has been studied since the 1950s, new approaches with selective contacts for electron or holes are being developed.…”

Section: Introductionmentioning

confidence: 99%

Characterization of the Interfacial Defect Layer in Chalcopyrite Solar Cells by Depth‐Resolved Muon Spin Spectroscopy

Alberto

Vilão

Ribeiro

et al. 2022

Adv Materials Inter

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As devices become smaller and more complex, the interfaces between adjacent materials become increasingly important and are often critical to device performance. An important research goal is to improve the interface between the absorber and the window layer by inserting buffer layers to adjust the transition. Depth‐resolved studies are key for a fundamental understanding of the interface. In the present experiment, the interface between the chalcopyrite Cu(In,Ga)Se2 absorber and various buffer layers are investigated using low‐energy muon spin rotation (μSR) spectroscopy. Depth resolution in the nm range is achieved by implanting the muons with different energies so that they stop at different depths in the sample. Near the interface, a region about 50 nm wide is detected where the lattice is more distorted than further inside the absorber. The distortion is attributed to the long‐range strain field caused by defects. These measurements allow a quantification of the corresponding passivation effect of the buffer layer. Bath‐deposited cadmium sulfide provides the best defect passivation in the near interface region, in contrast to the dry‐deposited oxides, which have a much smaller effect. The experiment demonstrates the great potential of low energy μSR spectroscopy for microscopic interfacial studies of multilayer systems.

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On the Importance of Joint Mitigation Strategies for Front, Bulk, and Rear Recombination in Ultrathin Cu(In,Ga)Se₂ Solar Cells

Abstract: On the importance of joint mitigation strategies for front, bulk and rear recombination in ultrathin Cu(In,Ga)Se2 solar cells. ACS Appl. Mater. Interfaces 2021, which has been published in final form at

Cited by 15 publications

References 108 publications

SiO_x Patterned Based Substrates Implemented in Cu(In,Ga)Se₂ Ultrathin Solar Cells: Optimum Thickness

SiO_x Patterned Based Substrates Implemented in Cu(In,Ga)Se₂ Ultrathin Solar Cells: Optimum Thickness

Exploiting the Optical Limits of Thin‐Film Solar Cells: A Review on Light Management Strategies in Cu(In,Ga)Se₂

Characterization of the Interfacial Defect Layer in Chalcopyrite Solar Cells by Depth‐Resolved Muon Spin Spectroscopy

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On the Importance of Joint Mitigation Strategies for Front, Bulk, and Rear Recombination in Ultrathin Cu(In,Ga)Se2 Solar Cells

Abstract: On the importance of joint mitigation strategies for front, bulk and rear recombination in ultrathin Cu(In,Ga)Se2 solar cells. ACS Appl. Mater. Interfaces 2021, which has been published in final form at

Cited by 15 publications

References 108 publications

SiOx Patterned Based Substrates Implemented in Cu(In,Ga)Se2 Ultrathin Solar Cells: Optimum Thickness

SiOx Patterned Based Substrates Implemented in Cu(In,Ga)Se2 Ultrathin Solar Cells: Optimum Thickness

Exploiting the Optical Limits of Thin‐Film Solar Cells: A Review on Light Management Strategies in Cu(In,Ga)Se2

Characterization of the Interfacial Defect Layer in Chalcopyrite Solar Cells by Depth‐Resolved Muon Spin Spectroscopy

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Product

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On the Importance of Joint Mitigation Strategies for Front, Bulk, and Rear Recombination in Ultrathin Cu(In,Ga)Se₂ Solar Cells

SiO_x Patterned Based Substrates Implemented in Cu(In,Ga)Se₂ Ultrathin Solar Cells: Optimum Thickness

SiO_x Patterned Based Substrates Implemented in Cu(In,Ga)Se₂ Ultrathin Solar Cells: Optimum Thickness

Exploiting the Optical Limits of Thin‐Film Solar Cells: A Review on Light Management Strategies in Cu(In,Ga)Se₂