III–V compound semiconductors offer optoelectronic
properties
that are well suited for the conversion of solar energy to chemical
fuels. While such materials suffer from poor stability under photoelectrochemical
(PEC) conditions, atomic layer deposition (ALD) of titanium oxide
(TiO
x
) has emerged as a powerful approach
for creating corrosion protection layers, thereby enabling efficient
and robust interfaces. However, the role of defects within TiO
x
layers and at the semiconductor/TiO
x
interface on the PEC performance remains
poorly understood and controlled. Here, we use p-type InP as a model
III–V semiconductor to investigate the impact of defects in
ALD TiO
x
on junction formation, interfacial
charge transport, and photocarrier recombination, which underpin characteristics
of PEC devices. We show that defect concentrations in TiO
x
can be tuned over a broad range, resulting in significant
modulation of the optical constants, electrical conductivity, and
interface chemistry. While plasma-enhanced ALD yields films with low
midgap-state concentrations, it introduces series resistance losses
due to oxidation of the substrate. In contrast, thermal ALD suppresses
interface oxidation but leads to electronically active defect states
within the band gap of TiO
x
. By controlling
these defect states, the nature of junction formation can be tuned,
and high photovoltage photocathodes can be achieved. In particular,
ALD TiO
x
layers possessing high carrier
concentrations form buried InP/TiO
x
pn
heterojunctions, whereas less defective layers preserve semiconductor/electrolyte
junction energetics to achieve large photovoltages and applied bias
photon-to-current efficiencies. These results highlight the power
of ALD for engineering photoelectrode interfaces and provide a new
route for tailoring the junction formation between buried and PEC
junctions.