On the induced charge in semiconductor detectors

Cavalleri, G.; Fabri, G.; Gatti, E.; Svelto, V.

doi:10.1016/0029-554x(63)90106-x

Cited by 113 publications

(13 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…where Q 1s the total charge produced by the ionizing particle and Ax/d is the fraction of the detector thickness which the charge has traversed. 10 A pre cise calculation of the induced pulse shape must in clude the variation of Ionization density along the particle track, the electric field profile and the velocity dependence of carrier mobility, which is cumbersome but easily done with a computer. However, a quick estimate of the collection time can be made by multiplying the thickness of the detector by the average incremental collection time (e.g., 15 ps/wm for electrons at (E * 2-10 4 V cm -1 ).…”

Section: (I)mentioning

confidence: 99%

Fast Timing Methods for Semiconductor Detectors

Spieler

1982

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

This tutorial paper discusses the basic parameters which determine the accuracy of timing measurements and their effect in a practical application, specifi cally timing with thin-.surface barrier detectors. The discussion focusses on properties of the detec tor, low-noise amplifiers, trigger circuits and time converters. New material presented in this paper includes bipolar transistor input stages with noise performance superior to currently available FETs, "noiseless" input terminations in sub-nanosecond pre amplifiers and methods using transmission lines to •-,>t;pie the detector to remotely mounted preamplifiers. Trigger circuits are characterized in terms of effec tive rise time, equivalent input noise and residual jitter. 1-INTRODUCTIONFast timing with semiconductor detectors is a many-faceted subject, where the multitude of relevant delays can easily obscure the fact that the perfor mance of aM timing systems is determined by only a few basic principles. The purpose of this tutorial paper is to point out these principles ind demonstrate how the> apply to a specific situation. For clarity this demonstration will be restricted to thin surface ba-rier detectors. This choice is justified by the feet that systems using these detectors not only pro vide the best time resolution currently being obtained with semiconductor detectors, but that they also have the potential for significant improvement.A typical nuclear detector system usinr surface barrier detectors is the AE-E time-of-flight te'escope. Figure 1 shows the basic configuration of such a system: a thin transmission detector (AE) and a stop detector (E) a>-e spaced so that particles pas sing through the sta-*t detector traverse a distance s before impinging on the stop detector. The time-offlight t between the two detectors is measured, which, together with the energy E measured in the stop detecmits calcu^tion of the particle mass: AE DETECTOR E DETECTOR pen•-*-E Time resolution of 50 to 100 ps is being obtained routinely by several experimental groups.^-' In orde* -to recognize and understand the limiting factors in these measurements it is necessary to systematically eva-uate the contributions of all components in the timing system. -SYSTEM COMPONENTS AND BASIC CRITERIAThe basic semiconductor detector timing channel is snown in Fig. 3. Its components a-e: 1. A detector, which produces a c-jri-ent or vo'tage pulse when a particle deposits energy in its sensi tive vo'ume.?. A series of amplifiers, which present the appro priate impedance to the detector and amplify the detector signal by an amount sufficient to drive the trigger circuit.3. A trigger (often called a discriminator}, which furnishes a normalized logic pulse with a well defin ed time relationship to the 'variable) input signal and ultimately to the physical cause of this signa 1 , i.e. the particle impinging on the detector.

show abstract

Section: (I)mentioning

confidence: 99%

Fast Timing Methods for Semiconductor Detectors

Spieler

1982

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

show abstract

“…The ratio of the collected charge to the liberated charge, the charge-collection efficiency r], is given by r) = r] T + ri R , where y\ T takes into account charge loss by trapping and r\ R charge loss by recombination. With the use of the relationship Aq=eAX/d, 7 it can be shown that 7] T is given to the first order in y e , y^ by height analyzer channel number) of the four most prominent conversion-electron lines were divided by the position of a simultaneously recorded pulser peak to correct for amplifier gain excursions (the maximum gain excursion during the 106-h run was 1.8%). The data from each of the conversion electron lines for which a ^ 1 were fitted to an expression of the form of (3) with a least-squares fit.…”

Section: Measurement Of the Mean Energy Required To Create An Electromentioning

confidence: 99%

Measurement of the Mean Energy Required to Create an Electron-Hole Pair in Silicon Between 6 and 77°K

et al. 1966

View full text Add to dashboard Cite

Recent measurement by Emery and Rabson 1 of €, the mean energy required to create an electron-hole pair with 207 Bi conversion electrons at 20°K in lithium-compensated silicon, resulted in a surprisingly high value of 5.22 ±0.02 eV. Previous measurement of the relative pulse height of 207 Bi conversion electrons with the use of surface barrier detectors of 3000 and 6700 fi-cm resistivity silicon by Dodge et al. 2,s indicated that e was very close to its room-temperature value of approximately 3.6 eV in the temperature interval 4.2-12°K. More recent measurements of e at 4.2°K by Fabjan, Kenawy, and Rauch 4 are in good agreement with the measurements of Dodge et al.The measurements of Emery and Rabson together with the measurements of Dodge et al. would imply that e exhibits a sharp peak at a temperature between 12 and 20°K. The existence of such a peak would be embarrassing to the existing theory of c. 5 The theory relates e to the band-gap energy Eg, the ratio X z -/x# of the mean free paths between ionizing and phonon collisions, and the phonon energy HUR at the Raman frequency, by the following expression:None of these quantities is expected to exhibit rapid variation with temperature. Furthermore, although Dodge et al. observed attenuated pulse heights in both lithium-compensated and nonlithium-compensated silicon detectors in the temperature interval around 20°K, these attenuated pulse heights were not interpreted as due to first-order changes in e. In the case of nonlithium-compensated silicon, the attenuated pulse heights were attributed by Dodge et al. to the long dielectric relaxation time of the undepleted silicon. This assumption successfully explained their extensive experimental data. The mechanism responsible for the attenuation of pulse heights from lithium-compensated silicon detectors was not experimentally explored in detail but was thought to be due to some less interesting process than a change in €. The possibility of structure in £ as a function of temperature together with the implicit disagreement between the results of previous measurements provide justification for the remeasurement of e reported here.Measurement of e as a function of temperature was carried out with the use of the cryostat shown in Fig. 1. A copper disk suspended from the top of the sample-space vacuum container by two thin-walled stainless-steel tubes served as a heat sink for the detector. Four carbon resistors were symmetrically embedded in the disk; two of the resistors were used as thermometers and two were used as heaters to elevate the temperature of the detector-heat-sink system above 4.2°K. The temperature of the copper heat sink was measured

show abstract

“…Cavalleri et al 5 had earlier explained that the discrepancy between the two approaches was due to the fact that the potential energy between the carriers and the fixed space charge had been neglected in the energy balance; they claim that the correct analysis of the energy balance yields an induced charge given by the first equality in eq. (2), i.e.…”

Section: Introductionmentioning

confidence: 98%

<title>Comments on Ramo's theorem</title>

Hamel

Julien

2001

SPIE Proceedings

View full text Add to dashboard Cite

Ramo's theorem provides a convenient way of simulating the currents induced on the electrodes of a radiation detector by the movement of charge carriers. The concept of weighting potential or of weighting field is the key ingredient in the calculation of the induced currents. The effect of the space charge present in the detector on the weighting potentials is discussed. Three types of space charge are considered and are shown to have different effects on the induced currents. These are 1) the polarization space charge, 2) a fixed volume space charge and 3) the charge stored in the depletion layer of a semiconductor detector. A new definition of the weighting potential is proposed that is valid for all situations.

show abstract

On the induced charge in semiconductor detectors

Cited by 113 publications

References 1 publication

Fast Timing Methods for Semiconductor Detectors

Fast Timing Methods for Semiconductor Detectors

Measurement of the Mean Energy Required to Create an Electron-Hole Pair in Silicon Between 6 and 77°K

<title>Comments on Ramo's theorem</title>

Contact Info

Product

Resources

About