On the initial growth of atomic layer deposited TiO2 films on silicon and copper surfaces

Tao, Qian; Overhage, Kirsten; Jursich, Gregory; Takoudis, Christos G.

doi:10.1016/j.tsf.2012.07.004

Cited by 29 publications

(20 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The ALD TiO 2 is also expected to be a promising electron transport layer (ETL) of perovskite solar cells owing to its high compactness and ability to have excellent coverage on a transparent conductive layer [20][21][22][23]. ALD TiO 2 films can be deposited by using different titanium precursors, such as TiCl 4 [24], TiI 4 [25], tetra-dimethyl-amino titanium [26], titanium tetraisopropoxide (TTIP) [27], titanium ethoxide [28] and titanium methoxide [29]. Details for the preparation of TiO 2 films based on these precursors are reviewed in ref.…”

Section: Introductionmentioning

confidence: 99%

Effect of Annealing Temperature on Spatial Atomic Layer Deposited Titanium Oxide and Its Application in Perovskite Solar Cells

et al. 2020

View full text Add to dashboard Cite

In this study, spatial atomic layer deposition (sALD) is employed to prepare titanium dioxide (TiO2) thin films by using titanium tetraisopropoxide and water as metal and water precursors, respectively. The post-annealing temperature is varied to investigate its effect on the properties of the TiO2 films. The experimental results show that the sALD TiO2 has a similar deposition rate per cycle to other ALD processes using oxygen plasma or ozone oxidant, implying that the growth is limited by titanium tetraisopropoxide steric hindrance. The structure of the as-deposited sALD TiO2 films is amorphous and changes to polycrystalline anatase at the annealing temperature of 450 °C. All the sALD TiO2 films have a low absorption coefficient at the level of 10−3 cm−1 at wavelengths greater than 500 nm. The annealing temperatures of 550 °C are expected to have a high compactness, evaluated by the refractive index and x-ray photoelectron spectrometer measurements. Finally, the 550 °C-annealed sALD TiO2 film with a thickness of ~8 nm is applied to perovskite solar cells as a compact electron transport layer. The significantly enhanced open-circuit voltage and conversion efficiency demonstrate the great potential of the sALD TiO2 compact layer in perovskite solar cell applications.

show abstract

Section: Introductionmentioning

confidence: 99%

Effect of Annealing Temperature on Spatial Atomic Layer Deposited Titanium Oxide and Its Application in Perovskite Solar Cells

et al. 2020

View full text Add to dashboard Cite

show abstract

“…Previous studies have achieved area selective deposition of thin films using methods such as relying on inherent selectivity differences between different surface materials, choosing precursors that enhance or delay the growth on one surface versus another, using an unreactive polymer film as a blocking layer in the regions where ALD is not desired or precursor infiltration in polymers . However, more commonly, the surface of the substrate is chemically modified with self‐assembled monolayers (SAMs) .…”

Section: Introductionmentioning

confidence: 99%

Sequential Regeneration of Self‐Assembled Monolayers for Highly Selective Atomic Layer Deposition

Hashemi¹,

Bent

2016

Adv Materials Inter

View full text Add to dashboard Cite

Next generation 3D electronic devices will require novel processing methods. Area selective atomic layer deposition (ALD) of robust films has the opportunity to play an important role in significantly reducing complexities associated with current top‐down fabrication processes of patterned structures. An all‐vapor process is demonstrated for depositing and regenerating thiol self‐assembled monolayers (SAMs) on copper between ALD cycles. It is shown that by redosing SAM precursors, the SAM quality can be restored after it begins to degrade. It is also shown that this approach is effective in improving the blocking properties of the SAMs against ZnO ALD. This process allows selective deposition of dielectric films on dielectric regions of patterned Cu/SiO2 substrates more than three times thicker than approaches that do not regenerate the SAM. In addition, this all‐vapor strategy provides the ability to integrate the selective deposition process into the ALD reactor, reduces artifacts associated with depositing the SAMs on porous or 3D structures, and decreases the required deposition time for the passivation layer, opening up the possibility for new applications in next generation electronic devices.

show abstract

“…Several ALD studies on titanium dioxide have been carried out using different titanium precursors. TiCl 4 , 28 TiI 4 , 29 tetrakis-dimethyl-amido titanium (TDMAT), 30 titanium tetraisopropoxide (TTIP), 31 titanium ethoxide, 32 and titanium methoxide 33 were used in order to deposit titanium dioxide ALD films. Among these precursors, TTIP is costefficient and has the highest vapor pressure among titanium metalorganics, which makes it an interesting precursor for developing for large scale and roll-to-roll ALD processes.…”

Section: Introductionmentioning

confidence: 99%

Low temperature temporal and spatial atomic layer deposition of TiO2 films

Aghaee

Maydannik

Johansson

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Titanium dioxide films were grown by atomic layer deposition (ALD) using titanium tetraisopropoxide as a titanium precursor and water, ozone, or oxygen plasma as coreactants. Low temperatures (80-120 C) were used to grow moisture barrier TiO 2 films on polyethylene naphthalate. The maximum growth per cycle for water, ozone, and oxygen plasma processes were 0.33, 0.12, and 0.56 Å /cycle, respectively. X-ray photoelectron spectrometry was used to evaluate the chemical composition of the layers and the origin of the carbon contamination was studied by deconvoluting carbon C1s peaks. In plasma-assisted ALD, the film properties were dependent on the energy dose supplied by the plasma. TiO 2 films were also successfully deposited by using a spatial ALD (SALD) system based on the results from the temporal ALD. Similar properties were measured compared to the temporal ALD deposited TiO 2 , but the deposition time could be reduced using SALD. The TiO 2 films deposited by plasma-assisted ALD showed better moisture barrier properties than the layers deposited by thermal processes. Water vapor transmission rate values lower than 5 Â 10 À4 g day À1 m À2 (38 C and 90% RH) was measured for 20 nm of TiO 2 film deposited by plasma-assisted ALD.

show abstract

On the initial growth of atomic layer deposited TiO2 films on silicon and copper surfaces

Cited by 29 publications

References 28 publications

Effect of Annealing Temperature on Spatial Atomic Layer Deposited Titanium Oxide and Its Application in Perovskite Solar Cells

Effect of Annealing Temperature on Spatial Atomic Layer Deposited Titanium Oxide and Its Application in Perovskite Solar Cells

Sequential Regeneration of Self‐Assembled Monolayers for Highly Selective Atomic Layer Deposition

Low temperature temporal and spatial atomic layer deposition of TiO2 films

Contact Info

Product

Resources

About