On the interband pairing in doped graphane

Kristoffel, N.; Rägo, Küllike

doi:10.1016/j.physleta.2011.04.038

Cited by 6 publications

(3 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Savini et al [ 100 ] used p-doped graphane to fabricate a prototype high-Tc electron–phonon superconductor, which has Tc as high as 150 K for a 1-nm nanowire, higher than copper oxides. Loktev and Turkowski [ 101 ] and Kristoffel and Rägo [ 102 ] considered the superconducting properties of multilayer graphane by taking into account the fluctuations of the order parameter. The result showed that in the single-layer case, the BKT critical temperature which corresponds to the vortex SC is equal to the MF temperature 100 K beginning from a rather low value of doping less than 0.01.…”

Section: Reviewmentioning

confidence: 99%

Graphene’s cousin: the present and future of graphane

et al. 2014

View full text Add to dashboard Cite

The so-called graphane is a fully hydrogenated form of graphene. Because it is fully hydrogenated, graphane is expected to have a wide bandgap and is theoretically an electrical insulator. The transition from graphene to graphane is that of an electrical conductor, to a semiconductor, and ultimately to an electrical insulator. This unique characteristic of graphane has recently gained both academic and industrial interest. Towards the end of developing novel applications of this important class of nanoscale material, computational modeling work has been carried out by a number of theoreticians to predict the structures and electronic properties of graphane. At the same time, experimental evidence has emerged to support the proposed structure of graphane. This review article covers the important aspects of graphane including its theoretically predicted structures, properties, fabrication methods, as well as its potential applications.

show abstract

Section: Reviewmentioning

confidence: 99%

Graphene’s cousin: the present and future of graphane

et al. 2014

View full text Add to dashboard Cite

show abstract

“…On the basis of our analysis, we may start to indicate a possible roadmap for the discovery of novel HTS. 16 The conditions for higher temperature superconductivity, or even room temperature superconductivity, might be met in graphene bilayers and graphane, 72,73 where the exchange-like interband interaction could be even stronger than the intraband Cooper pairing, as also predicted for superlattices of carbon nanotubes. 22…”

mentioning

confidence: 97%

Resonant and crossover phenomena in a multiband superconductor: Tuning the chemical potential near a band edge

et al. 2010

View full text Add to dashboard Cite

Resonances in the superconducting properties, in a regime of crossover from BCS to mixed Bose-Fermi superconductivity, are investigated in a two-band superconductor where the chemical potential is tuned near the band edge of the second miniband generated by quantum confinement effects. The shape resonances at T=0 in the superconducting gaps (belonging to the class of Feshbach-like resonances) is manifested by interference effects in the superconducting gap at the first large Fermi surface when the chemical potential is in the proximity of the band edge of the second miniband. The case of a superlattice of quantum wells is considered and the amplification of the superconducting gaps at the Lifshitz transition of the type neck-collapsing of Fermi surface topology is clearly shown. The results are found to be in good agreement with available experimental data on a superlattice of honeycomb boron layers intercalated by Al and Mg spacer layers

show abstract

“…Atoms replacing C atoms in GA can have large magnetic moments, and may have spintronic applications [8,9]. A high-temperature superconductor has been predicted for p-doped GA [10,11,12]. H-substitution by Ca in GA (replacing H) has good potential as a hydrogen storage material, binding up to 5 H 2 molecules/Ca atom [13].…”

Section: Introductionmentioning

confidence: 99%

Transition metal substitution for H in graphane: a high-throughput study

Hess

Swenson²

2017

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

This systematic study of transition metal (TM) substitution for H on graphane TM H C, (TM = Sc, Ti, V, Cr, Mn) combines ab initio calculations and cluster expansion to explore a huge variety of structures in more than 20 supercells over the full concentration range from x = 0 to 1. We find energetically favorable structures at each concentration in supercells not studied before. At low x the lowest-energy structures contain lines and bands of TM atoms. For the larger atoms (Sc, Ti, V) the ordering becomes complex at higher concentrations, and their increased interaction in graphene causes H atoms to detach from the graphene to positions above the TMs. The smaller atoms (Cr, Mn) have much simpler ordering that favors TM atoms all on one side before filling the other side. At full coverage (x = 1), the TM atoms remain well bound to the graphene, the structure being more stable than a free monolayer by 0.5 to 0.8 eV. The binding energies of TM atoms are strongly enhanced by the binding of H to graphene, with strengths similar to the bulk cohesive energy of Ti.

show abstract

On the interband pairing in doped graphane

Abstract: An estimation shows that the interband pairing channel between the valence band components of doped graphane can support a superconducting transition temperature (or a contribution into this expected event) of the order of 100 K at the coupling strength near 1 eV

Cited by 6 publications

References 38 publications

Graphene’s cousin: the present and future of graphane

Graphene’s cousin: the present and future of graphane

Resonant and crossover phenomena in a multiband superconductor: Tuning the chemical potential near a band edge

Transition metal substitution for H in graphane: a high-throughput study

Contact Info

Product

Resources

About