On the interpretation of hall and thermoelectric effects in polycrystalline films

Lipskis, K.; Sakalas, A.; Viščakas, J.

doi:10.1002/pssa.2210040341

Cited by 34 publications

(4 citation statements)

References 4 publications

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“…18 We suggest that the charge carrier scattering mechanisms near room temperature should be dominated by grain boundary scattering. The charge carrier mobility limited by the grain boundary scattering can be described as: 18,46,47…”

Section: Resultsmentioning

confidence: 99%

Optimizing the average power factor of p-type (Na, Ag) co-doped polycrystalline SnSe

Wang

Bailey

et al. 2019

RSC Adv.

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Despite the achievable high thermoelectric properties in SnSe single crystals, the poor mechanical properties and the relatively high cost of synthesis restrict the large scale commercial application of SnSe. Herein, we reported that co-doping with Na and Ag effectively improves the thermoelectric properties of polycrystalline SnSe. Temperature-dependent carrier mobility indicates that the grain boundary scattering is the dominant scattering mechanism near room temperature, giving rise to low electrical conductivity for the polycrystalline SnSe in comparison with that of the single crystal. Co-doping with Na and Ag improves the electrical conductivity of polycrystalline SnSe with a maximum value of 90.1 S cm À1 at 323 K in Na 0.005 Ag 0.015 Sn 0.98 Se, and the electrical conductivity of the (Na, Ag) co-doped samples is higher than that of the single doped samples over the whole temperature range (300-773 K). Considering the relatively high Seebeck coefficient of 335 mV K À1 at 673 K and the minimum thermal conductivity of 0.48 W m À1 K À1 at 773 K, Na 0.005 Ag 0.015 Sn 0.98 Se is observed to have the highest PF and ZT among the series of samples, with values of 0.50 mW cm À1 K À2 and 0.81 at 773 K, respectively. Its average PF and ZT are 0.43 mW cm À1 K À2 and 0.37, which is 92% and 68% higher than that of Na 0.02 Sn 0.98 Se, 40% and 43% higher than that of Ag 0.02 Sn 0.98 Se, and 304% and 277% higher than that of the previously reported SnSe, respectively.

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Section: Resultsmentioning

confidence: 99%

Optimizing the average power factor of p-type (Na, Ag) co-doped polycrystalline SnSe

Wang

Bailey

et al. 2019

RSC Adv.

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“…This model, which was described in detail for Hall measurements of Li-doped NiO [16,17], can explain the observed sign change of the Hall mobility as a function of temperature for the given sample. However, one needs to keep in mind that this previous work on the Hall effect for a combination of transport paths with different charge carrier signs and different mobilities (see also refs [18][19][20]) referred to charge transport in crystalline materials whereas the here investigated material consists partly of an amorphous phase where the Hall effect has an anomalous sign.…”

Section: Discussionmentioning

confidence: 97%

Anomalous Hall effect in microcrystalline Si:H films

Sellmer

Bronger

Beyer

et al. 2012

Journal of Non-Crystalline Solids

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“…To model the average effect of the grain boundaries or grain surfaces, we found some prior studies in the literature. A physical model by Lipskis et al [84] and by Orton and Powell [85] is based on expressing mobility as a function of inverse of average grain size and potential barrier height at the grain barriers, however the model parameters are obtained by fitting to the measured temperature-dependent mobility data [86]. Another model, that is more suitable for our samples, includes the combined effects of grain boundaries and surfaces in a material.…”

Section: Carrier-surface Scatteringmentioning

confidence: 99%

Investigating the key role of carrier transport mechanism in SnSe nanoflakes with enhanced thermoelectric power factor

Mandava¹,

Bisht²,

Saini³

et al. 2022

Nanotechnology

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A novel SnSe nanoake system is explored for its thermoelectric properties from both experiments and ab initio study. The nanoakes of the low temperature phase of SnSe (Pnma) are synthesized employing a fast and efficient refluxing method followed by spark plasma sintering at two different temperatures. We report an enhanced power factor (12 W/mK2 - 67 W/mK2 in the temperature range 300 K-600 K) in our p-type samples. We find that the prime reason for a high PF in our samples is a significantly improved electrical conductivity (1050 S/m - 2180 S/m in the temperature range 300 K-600 K). From our ab initio band structure calculations accompanied with the models of temperature and surface dependent carrier scattering mechanisms, we reveal that an enhanced electrical conductivity is due to the reduced carrier-phonon scattering in our samples. The trans- port calculations are performed using the Boltzmann transport equation within relaxation time approximation. With our combined experimental and theoretical study, we demonstrate that the thermoelectric properties of p-type Pnma-SnSe could be improved by tuning the carrier scattering mechanisms with a control over the spark plasma sintering temperature.

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On the interpretation of hall and thermoelectric effects in polycrystalline films

Cited by 34 publications

References 4 publications

Optimizing the average power factor of p-type (Na, Ag) co-doped polycrystalline SnSe

Optimizing the average power factor of p-type (Na, Ag) co-doped polycrystalline SnSe

Anomalous Hall effect in microcrystalline Si:H films

Investigating the key role of carrier transport mechanism in SnSe nanoflakes with enhanced thermoelectric power factor

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