Interest
in the use of local band extrema, known as valleys, as
a possible information carrier has in recent years been advanced by
the isolation of 2D transition metal dichalcogenides (TMDCs). In some
monolayer TMDCs, the structural inversion asymmetry leads to spin-valley
locked states that present potential advantages for information storage
and manipulation beyond existing charge- and spin-based semiconductor
technologies. However, understanding of the role of defects on exciton
recombination and valley scattering remains lacking and limits progress
toward applications. Here, we report gate voltage-dependent polarized
photoluminescence measurements on CVD-grown monolayer WS2 and MoS2 field-effect transistors and observe a quaternary
system of valley polarized excitons and trions. Intriguingly, we find
the spectra to exhibit isoemissive points, which were previously seen
only as evidence of a binary system. We propose a rate model to explain
the existence of isoemission in a quaternary system and find that
the presence of isoemissive points imply a kinetic relationship between
recombination and valley scattering. This relationship sheds light
on the inverse relation seen between the polarization degree and photoluminescence
intensity. Further consideration of the phenomenon also led to the
identification of a possible new mechanism for charge carrier detrapping
using the energy released from trion recombination.