2012 IEEE International Ultrasonics Symposium 2012
DOI: 10.1109/ultsym.2012.0133
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On the lateral excitation of shear modes in AlN layered resonators

Abstract: Abstract-In this paper we describe the fabrication and frequency characterization of different structures intended for the lateral excitation of shear modes in A1N c-axis-oriented films, which are at the same time designed to minimize the excitation of longitudinal modes. Laterally excited resonators were built on partially metallic (Si0 2 , W) and insulating (SiOC, Si 3 N 4 ) acoustic mirrors built on silicon substrates, and on insulating mirrors (Si0 2 , TaO x) built on insulating glass plates. TiO x seed la… Show more

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Cited by 3 publications
(1 citation statement)
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“…The most straightforward, known as lateral 59 excitation, consists in applying an electric field parallel to the sur-60 face of a c axis oriented through two coplanar electrodes, to excite 61 the shear wave by virtue of the d 15 piezoelectric coefficient [5]. In 62 practice, lateral excitation provides extremely weak electric fields 63 between the electrodes and, hence, hardly noticeable shear excita-64 tions [6,7]. Alternatively, shear modes are effectively generated by the direction of the impinging species [8].…”
mentioning
confidence: 99%
“…The most straightforward, known as lateral 59 excitation, consists in applying an electric field parallel to the sur-60 face of a c axis oriented through two coplanar electrodes, to excite 61 the shear wave by virtue of the d 15 piezoelectric coefficient [5]. In 62 practice, lateral excitation provides extremely weak electric fields 63 between the electrodes and, hence, hardly noticeable shear excita-64 tions [6,7]. Alternatively, shear modes are effectively generated by the direction of the impinging species [8].…”
mentioning
confidence: 99%