On the Link Beween Octahedral Rotations and Conductivity in the Domain Walls of BiFeO<sub>3</sub>

Catalán, Gustau

doi:10.1080/07399332.2012.678127

Cited by 15 publications

(12 citation statements)

References 30 publications

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“…In fact, the close relation between phase boundary conductivity and oxygen octahedral tilt has been discussed. 40 The observed difference in conductivity at the phase boundaries (Figure 2d) can then be attributed to local changes in the Fe-O-Fe angle.…”

Section: Resultsmentioning

confidence: 94%

Enhanced conductivity at orthorhombic–rhombohedral phase boundaries in BiFeO3 thin films

et al. 2016

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Enhanced properties in modern functional materials can often be found at structural transition regions, such as morphotropic phase boundaries (MPB), owing to the coexistence of multiple phases with nearly equivalent energies. Strain-engineered MPBs have emerged in epitaxially grown BiFeO 3 (BFO) thin films by precisely tailoring a compressive misfit strain, leading to numerous intriguing phenomena, such as a massive piezoelectric response, magnetoelectric coupling, interfacial magnetism and electronic conduction. Recently, an orthorhombic-rhombohedral (O-R) phase boundary has also been found in tensile-strained BFO. In this study, we characterise the crystal structure and electronic properties of the two competing O and R phases using X-ray diffraction, scanning probe microscope and scanning transmission electron microscopy (STEM). We observe the temperature evolution of R and O domains and find that the domain boundaries are highly conductive. Temperature-dependent measurements reveal that the conductivity is thermally activated for R-O boundaries. STEM observations point to structurally wide boundaries, significantly wider than in other systems. Therefore, we reveal a strong correlation between the highly conductive domain boundaries and structural material properties. These findings provide a pathway to use phase boundaries in this system for novel nanoelectronic applications. INTRODUCTIONMultiferroic BiFeO 3 (BFO) has attracted great interest as a promising lead-free functional material owing to its key properties, including electromechanical and magnetoelectric coupling, domain wall conductance, bias-induced semiconductor-insulator transitions and photovoltaic effects. 1-7 Bismuth ferrite is a room temperature multiferroic perovskite exhibiting antiferromagnetism that is coupled with ferroelectric order. 8 Below the Curie temperature, bulk BFO is considered to have a rhombohedral R3c space group structure that allows antiphase octahedral tilting and ionic displacements from the center of symmetry along the [111] pseudocubic direction. 9,10 The recent discovery of a strain-induced morphotropic phase boundary in BFO films grown on (001) LaAlO 3 has attracted further interest with the compressive strain imposed by an underlying substrate stabilizing a tetragonally distorted phase. 11-17 Mixed-phase regions exhibit the coexistence of both R-and T-like phases with the ability to selectively switch between the two phases by an external electric field and force. [18][19][20][21][22] Interestingly, the strong correlation between T-R interfaces and their enhanced properties, such as the finding of a large electric-field-induced strain 23 and a giant piezoelectric d 33 coefficient, led to extensive studies of bismuth ferrite films under compressive strain by both experimental and theoretical approaches. Moreover, a correlation between the elasticity at the T-R interfaces and electronic conduction was also reported. 24 Triggered by

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Section: Resultsmentioning

confidence: 94%

Enhanced conductivity at orthorhombic–rhombohedral phase boundaries in BiFeO3 thin films

et al. 2016

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“…It can also depend on the change of Ω parameter that takes place in the vicinity of FE DW. In particular, the octahedral straightening, as was shown by Catalan [55], can be caused by strain-rotation coupling inside FE DWs of BFO.…”

Section: Review @ Rrlmentioning

confidence: 71%

Interplay between elasticity, ferroelectricity and magnetism at the domain walls of bismuth ferrite

Gareeva

Diéguez

Íñiguez

et al. 2015

Phys. Status Solidi RRL

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Multiferroic domain walls have recently been proposed as the active element in devices related to spintronics, data storage, and magnetic logic. Among multiferroics, BiFeO3 is by far the most studied material. Its domain walls have shown rich behaviours that include conductivity in an otherwise insulating crystal, and magnetotransport properties that are markedly different from those of the bulk. In this article we summarize the experimental evidence and the current models used to understand the interplay between elastic, electric, and magnetic properties of the domain walls. Starting from the considera‐ tion of antiferromagnetic domain structures on a background of ferroelectric domains, and emphasizing pinning effects, we proceed to discuss the microscopic behavior of ferroelectricity and magnetism at the walls. We describe how domain organization in BiFeO3 is caused by structural transformations, and scrutinize modelling works pinpointing their characteristic features. Finally, we summarize the recent progress and list open questions for future study on BiFeO3 domain structures. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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“…Catalan [43] has used this approach to calculate the local strain and octahedral rotations at the centre of the bismuth ferrite domain walls. In this work, the domain wall is treated as a pseudo-paraelectric phase (a phase with cancelled polarization along the appropriate axes), epitaxially clamped between the ferroelectric domains.…”

Section: Domain Wall Structurementioning

confidence: 99%

“…If the unit cell is expanded-as must happen inside a ferroelectric domain wall-then the tilts will be reduced. Figure from Catalan [43], copyright by Taylor and Francis defect is random bond or random field. Specifically, the theoretical roughness coefficient in a random bond system is [47][48][49] …”

Section: Domain Wall Roughnessmentioning

confidence: 99%

“…[43]). This is particularly true of 180°walls because, since they separate domains of opposite polarity they must necessarily go through zero polarization in the middle, (note however that polarization may rotate rather than disappear-this is certainly the case in magnets, for which the spin is quantized and cannot be cancelled, so it can only be rotated as in Bloch walls or Neel walls).…”

Section: ð9:10þmentioning

confidence: 99%

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Physics of Ferroic and Multiferroic Domain Walls

Catalán

2014

Mesoscopic Phenomena in Multifunctional Materials

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Ferroic materials are defined by having an order parameter that can be oriented in more than one direction. Within a ferroic material, then, there can be regions (domains) with different orientation of the order parameter: magnetic domains in ferromagnets, polar domains in ferroelectrics, twins in ferroelastics. Domain walls, or domain boundaries, are the separations between adjacent domains. In the last few years, domain walls have moved from being regarded as an inevitable by-product of the domains, to regions of interest in their own right, with unique electronic properties that may be used as the active ingredient in new electronic device paradigms, in what has been called ''domain wall nanoelectronics''. The present book chapter outlines the basic physics of domain walls from their thickness and internal structure to their properties and dynamics. We will draw the connection between the fundamental properties and their experimental observation. The last section will discuss current unresolved challenges in this exciting and emerging field. IntroductionThe study of domain walls is inextricably linked to that of domains-regions with different orientation of a switchable order parameter. Domains were first investigated in ferromagnetic materials [1,2], but the domains of other ferroic materials such as ferroelectrics [3] and ferroelastics [4] have also been studied for many decades. More recently, multiferroics (materials with more than one ferroic order

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On the Link Beween Octahedral Rotations and Conductivity in the Domain Walls of BiFeO₃

Cited by 15 publications

References 30 publications

Enhanced conductivity at orthorhombic–rhombohedral phase boundaries in BiFeO3 thin films

Enhanced conductivity at orthorhombic–rhombohedral phase boundaries in BiFeO3 thin films

Interplay between elasticity, ferroelectricity and magnetism at the domain walls of bismuth ferrite

Physics of Ferroic and Multiferroic Domain Walls

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On the Link Beween Octahedral Rotations and Conductivity in the Domain Walls of BiFeO3

Cited by 15 publications

References 30 publications

Enhanced conductivity at orthorhombic–rhombohedral phase boundaries in BiFeO3 thin films

Enhanced conductivity at orthorhombic–rhombohedral phase boundaries in BiFeO3 thin films

Interplay between elasticity, ferroelectricity and magnetism at the domain walls of bismuth ferrite

Physics of Ferroic and Multiferroic Domain Walls

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On the Link Beween Octahedral Rotations and Conductivity in the Domain Walls of BiFeO₃