On the Mean Square Displacements (MSD) of Hg and Te in HgTe

Madhavan, Y.; Ramachandran, K.; Haridasan, T.M.

doi:10.1002/pssb.2221530216

Cited by 3 publications

(2 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This rather simplistic approach yields BCd/Hg=4"0 and BTe--1.7 ~2. Finally, Madhavan, Ramachandran & Haridasan (1989) have calculated, using a modified rigid-ion model, that Bng = 2-2 and Bye = 1.8 A2 for HgTe at 300 K. Clearly there is a fair degree of variability between Debye-Waller-factor values (both theoretical and experimental). It can be said, however, that the values given in Table 5, for our MCT sample, are quite reasonable.…”

Section: M= E W(ifo L-ifc I) =mentioning

confidence: 98%

Structural aspects of MOCVD-grown Hg1−xCdxTe layers on novel GaAs substrates

Stevenson¹,

Gao²,

Pain³

et al. 1991

Acta Cryst Sect A

View full text Add to dashboard Cite

X-ray diffraction studies of six samples of metal organic chemical vapour deposition (MOCVD)grown Hgl_xCdxTe on novel GaAs substrates have been carried out. The six GaAs substrates have (311), (~ii), (511), (51f), (711) and (711) orientations. The absolute polarities of the six substrates, initially unknown, have been determined by X-ray anomalous scattering (after the layers were deposited). The orientations and absolute polarities of the six Hg~_xCdxTe layers have similarly been determined and follow the substrates. An extensive set of integrated-intensity data has been collected from the (311) Hg~_xCdxTe layer, which is of the order of 1 Ixm in thickness. Least-squares analysis of these data yields information about the thermal vibrations of the atomic species, extinction effects and the average composition of the Hg~_xCdxTe layer. Some results of double-crystal rocking-curve measurements for each of the six samples are also reported. The Rutherford backscattering of 2 MeV He ions has been used to determine independently the absolute polarity, composition and quality of the (311) and (311) Hg~_xCd,,Te layers. ExperimentalThe MCT layers were grown in an MR Semicon Quantax 226 MOCVD reactor. The (2 in) GaAs substrates, supplied by Wacker-Chemitronic GMBH, Germany, were polished on both sides and of nominal (311), (511) and (711) orientations. The substrates were halved and one half was inverted in the reactor prior to deposition of the MCT la_yers, i.e. MCT layers were grown on (n 11) and (~11) GaAs substrates placed side by side in the reactor, for n = 3, 5 and 7

show abstract

Section: M= E W(ifo L-ifc I) =mentioning

confidence: 98%

Structural aspects of MOCVD-grown Hg1−xCdxTe layers on novel GaAs substrates

Stevenson¹,

Gao²,

Pain³

et al. 1991

Acta Cryst Sect A

View full text Add to dashboard Cite

show abstract

“…The MSDs of defects and their neighbours have been studied theoretically for substitutional defects in KI [8] and for interstitial defects in CaF, [9]. Very recently theoretical evaluations of the MSDs of neighbours around a vacancy in NaCl [lo], CdTe [l 11 and HgTe [12] have also been reported. In this present work, investigations on the MSD of neighbours around a vacancy in some zinc based tellurides are reported.…”

Section: Introductionmentioning

confidence: 99%

Mean Square Displacement (MSD) of Neighbours around a Vacancy in Some Zinc Based Tellurides

Madhavan¹,

Ponnammal²,

Ramachandran

et al. 1990

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

The mean square displacements (MSD) of neighbours around anion and cation vacancies in the systems ZnTe, Zn,Cd, -,Te, and Zn,Hg, _,Te are worked out for different values of x giving an active role for the vacancy following the theory of Maradudin et al. The results are compared with available experimental values and discussed. Die mittleren quadratischen Verschiebungen (MSD) der Nachbarn um Anionen-und Kationenlucken in den Systemen ZnTe, Zn,Cd, -,Te und Zn,Hg, _,Te werden fur verschiedene x-Werte behandelt und zeigen die aktive Rolle der Leerstellen entsprechend der Theorie von Maradudin et al. Die Ergebnisse werden mit vorhandenen experimentellen Werten verglichen und diskutiert.

show abstract

Chlorine Diffusion in CdTe

Sadaiyandi

Ramachandran

1991

Physica Status Solidi (b)

View full text Add to dashboard Cite

The experimental results of chlorine diffusion in CdTe reveal that the dominant mechanism for diffusion is through neutral defect pair such as [VCdVTe]*. Here, theoretical calculations are carried out for all the possible mechanisms such as single vacancy, single interstitial, neutral defect pair, and Frenkel defect pair. The results suggest that the most possible mechanism for Cl diffusion in CdTe is that through neutral defect pair, supporting the experiment.

show abstract

On the Mean Square Displacements (MSD) of Hg and Te in HgTe

Cited by 3 publications

References 10 publications

Structural aspects of MOCVD-grown Hg1−xCdxTe layers on novel GaAs substrates

Structural aspects of MOCVD-grown Hg1−xCdxTe layers on novel GaAs substrates

Mean Square Displacement (MSD) of Neighbours around a Vacancy in Some Zinc Based Tellurides

Chlorine Diffusion in CdTe

Contact Info

Product

Resources

About