1973
DOI: 10.1063/1.1654596
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On the mechanism for microwave amplification in ``supercritically'' doped n-GaAs

Abstract: Good agreement is obtained between experiment and numerical calculations on supercritically doped n-GaAs transferred electron amplifiers. When moderate doping depletions near one electrode are included in the calculations, the results correctly predict the small-signal impedance and current-voltage characteristics, including the bias-induced stable-unstable-stable regimes. The results demonstrate the dominant role played by the electrodes in controlling the behavior of transferred electron amplifiers.

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Cited by 17 publications
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