2015
DOI: 10.1007/s10854-015-2728-6
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On the mechanism of carrier scattering at oxide precipitates in Czochralski silicon

Abstract: Oxygen precipitation (OP) in Czochralski (CZ) silicon has been extensively and intensively studied in the past decades due to its significance for improving manufacturing yield of integrated circuits. Nevertheless, how OP affects the carrier transportation in CZ silicon has hardly been addressed. Here, we report that the carrier mobility is decreased to a certain extent while the carrier concentration is nearly unchanged due to significant OP in CZ silicon. Interestingly, such a decrease in mobility can be off… Show more

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